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RGP10ME-M3/54

Description
DIODE GEN PURP 1KV 1A DO204AL
Categorysemiconductor    Discrete semiconductor   
File Size76KB,4 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
Environmental Compliance
Download Datasheet Parametric View All

RGP10ME-M3/54 Overview

DIODE GEN PURP 1KV 1A DO204AL

RGP10ME-M3/54 Parametric

Parameter NameAttribute value
Diode typestandard
Voltage - DC Reverse (Vr) (Maximum)1000V
Current - average rectification (Io)1A
Voltage at different If - Forward (Vf1.3V @ 1A
speedFast recovery = < 500 ns, > 200mA (Io)
Reverse recovery time (trr)500ns
Current at different Vr - Reverse leakage current5µA @ 600V
Capacitance at different Vr, F15pF @ 4V,1MHz
Installation typeThrough hole
Package/casingDO-204AL, DO-41, axial
Supplier device packagingDO-204AL(DO-41)
Operating Temperature - Junction-65°C ~ 175°C
RGP10A, RGP10B, RGP10D, RGP10G, RGP10J, RGP10K, RGP10M
www.vishay.com
Vishay General Semiconductor
Glass Passivated Junction Fast Switching Plastic Rectifier
FEATURES
• Superectifier structure for high reliability condition
• Cavity-free glass-passivated junction
• Fast switching for high efficiency
• Low leakage current
• High forward surge capability
• Solder dip 275 °C max. 10 s, per JESD 22-B106
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
SUPERECTIFIER
®
DO-204AL (DO-41)
PRIMARY CHARACTERISTICS
I
F(AV)
V
RRM
I
FSM
t
rr
I
R
V
F
T
J
max.
Package
Diode variation
1.0 A
50 V, 100 V, 200 V, 400 V, 600 V,
800 V, 1000 V
30 A
150 ns, 250 ns, 500 ns
5.0 μA
1.3 V
175 °C
DO-204AL (DO-41)
Single die
TYPICAL APPLICATIONS
For use in fast switching rectification of power supply,
inverters, converters and freewheeling diodes for consumer
and telecommunication.
MECHANICAL DATA
Case:
DO-204AL, molded epoxy over glass body
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Terminals:
Matte tin plated leads, solderable
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
Polarity:
Color band denotes cathode end
per
MAXIMUM RATINGS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Maximum repetitive peak
reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified
current 0.375" (9.5 mm) lead length
at T
A
= 55 °C
Peak forward surge current 8.3 ms
single half sine-wave
superimposed on rated load
Maximum full load reverse current,
full cycle average 0.375" (9.5 mm)
lead length T
A
= 55 °C
Operating junction and storage
temperature range
SYMBOL
V
RRM
V
RMS
V
DC
I
F(AV)
RGP10A
50
35
50
RGP10B
100
70
100
RGP10D
200
140
200
RGP10G
400
280
400
1.0
RGP10J
600
420
600
RGP10K
800
560
800
RGP10M
1000
700
1000
UNIT
V
V
V
A
I
FSM
30
A
I
R(AV)
T
J
, T
STG
100
-65 to +175
μA
°C
Revision: 07-Nov-16
Document Number: 88700
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000

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