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VI20100SHM3/4W

Description
DIODE SCHOTTKY 20A 100V TO-262AA
Categorysemiconductor    Discrete semiconductor   
File Size141KB,5 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
Environmental Compliance
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VI20100SHM3/4W Overview

DIODE SCHOTTKY 20A 100V TO-262AA

VI20100SHM3/4W Parametric

Parameter NameAttribute value
Diode typeSchottky
Voltage - DC Reverse (Vr) (Maximum)100V
Current - average rectification (Io)20A
Voltage at different If - Forward (Vf900mV @ 20A
speedFast recovery = < 500 ns, > 200mA (Io)
Current at different Vr - Reverse leakage current500µA @ 100V
Capacitance at different Vr, F-
Installation typeThrough hole
Package/casingTO-262-3, long lead, I²Pak, TO-262AA
Supplier device packagingTO-262AA
Operating Temperature - Junction-40°C ~ 150°C
V20100S, VI20100S
www.vishay.com
Vishay General Semiconductor
Ultra Low V
F
= 0.446 V at I
F
= 5 A
High-Voltage Trench MOS Barrier Schottky Rectifier
TMBS
®
TO-220AB
FEATURES
TO-262AA
K
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Low thermal resistance
• Solder dip 275 °C max. 10 s, per JESD 22-B106
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
2
V20100S
PIN 1
3
1
VI20100S
PIN 1
PIN 2
K
2
3
1
PIN 2
CASE
TYPICAL APPLICATIONS
For use in high frequency DC/DC converters, switching
power supplies, freewheeling diodes, OR-ing diode, and
reverse battery protection.
PIN 3
PIN 3
MECHANICAL DATA
PRIMARY CHARACTERISTICS
I
F(AV)
V
RRM
I
FSM
V
F
at I
F
= 20 A
T
J
max.
Package
Diode variation
20 A
100 V
250 A
0.69 V
150 °C
TO-220AB, TO-262AA
Single die
Case:
TO-220AB and TO-262AA
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS-compliant, and
commercial grade
Terminals:
matte tin plated leads, solderable
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 1A whisker test
Polarity:
as marked
Mounting Torque:
10 in-lbs maximum
per
MAXIMUM RATINGS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Maximum average forward rectified current (fig. 1)
Peak forward surge current 8.3 ms single half sine-wave superimposed
on rated load
Voltage rate of change (rated V
R
)
Operating junction and storage temperature range
SYMBOL
V
RRM
I
F(AV)
I
FSM
dV/dt
T
J
, T
STG
V20100S
100
20
250
10 000
-40 to +150
VI20100S
UNIT
V
A
A
V/μs
°C
Revision: 09-Nov-17
Document Number: 89190
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000

VI20100SHM3/4W Related Products

VI20100SHM3/4W V20100SHM3/4W
Description DIODE SCHOTTKY 20A 100V TO-262AA DIODE SCHOTTKY 20A 100V TO-220AB
Diode type Schottky Schottky
Voltage - DC Reverse (Vr) (Maximum) 100V 100V
Current - average rectification (Io) 20A 20A
Voltage at different If - Forward (Vf 900mV @ 20A 1.07V @ 20A
speed Fast recovery = < 500 ns, > 200mA (Io) Fast recovery = < 500 ns, > 200mA (Io)
Current at different Vr - Reverse leakage current 500µA @ 100V 350µA @ 100V
Installation type Through hole Through hole
Package/casing TO-262-3, long lead, I²Pak, TO-262AA TO-220-3
Supplier device packaging TO-262AA TO-220AB
Operating Temperature - Junction -40°C ~ 150°C -40°C ~ 150°C
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