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VS-UFL200FA60P

Description
DIODE GEN PURP 600V 144A SOT227
Categorysemiconductor    Discrete semiconductor   
File Size138KB,8 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
Environmental Compliance
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VS-UFL200FA60P Overview

DIODE GEN PURP 600V 144A SOT227

VS-UFL200FA60P Parametric

Parameter NameAttribute value
Diode configuration2 freestanding
Diode typestandard
Voltage - DC Reverse (Vr) (Maximum)600V
Current - average rectification (Io) (per diode)144A
Voltage at different If - Forward (Vf1.44V @ 100A
speedFast recovery = < 500 ns, > 200mA (Io)
Reverse recovery time (trr)141ns
Current at different Vr - Reverse leakage current100µA @ 600V
Operating Temperature - Junction-55°C ~ 175°C
Installation typeBase installation
Package/casingSOT-227-4,miniBLOC
Supplier device packagingSOT-227
Not Available for New Designs, Use VS-UFL230FA60
UFL200FA60P
Vishay Semiconductors
Insulated Ultrafast Rectifier Module, 200 A
FEATURES
• Two fully independent diodes
• Ceramic fully insulated package
(V
ISOL
= 2500 V
AC
)
• Ultrafast reverse recovery
• Ultrasoft reverse recovery current shape
• Low forward voltage
SOT-227
• Optimized for power conversion: Welding and industrial
SMPS applications
• Industry standard outline
• Plug-in compatible with other SOT-227 packages
• Easy to assemble
• Direct mounting to heatsink
• UL approved file E78996
• Compliant to RoHS directive 2002/95/EC
DESCRIPTION
PRODUCT SUMMARY
t
rr
I
F(AV)
at T
C
= 105 °C
V
R
102 ns
200 A
600 V
The UFL200FA60P insulated modules integrate two state of
the art Vishay Semiconductors ultrafast recovery rectifiers in
the compact, industry standard SOT-227 package. The
planar structure of the diodes, and the platinum doping
life-time control, provide a ultrasoft recovery current shape,
together with the best overall performance, ruggedness and
reliability characteristics.
These devices are thus intended for high frequency
applications in which the switching energy is designed not
to be predominant portion of the total energy, such as in the
output rectification stage of welding machines, SMPS,
DC/DC converters. Their extremely optimized stored charge
and low recovery current reduce both over dissipation in the
switching elements (and snubbers) and EMI/RFI.
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Cathode to anode voltage
Continuous forward current per diode
Single pulse forward current per diode
Maximum power dissipation per module
Isolation voltage
Operating junction and storage temperatures
SYMBOL
V
R
I
F
I
FSM
P
D
V
ISOL
T
J
, T
Stg
T
C
= 85 °C
T
C
= 25 °C
T
C
= 85 °C
Any terminal to case, t = 1 min
TEST CONDITIONS
MAX.
600
144
1000
360
2500
- 55 to 175
UNITS
V
A
W
V
°C
Document Number: 94551
Revision: 21-Jul-10
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
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