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BSW67A-T

Description
TRANSISTOR 1000 mA, 120 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-39, BIP General Purpose Small Signal
CategoryThe transistor   
File Size141KB,8 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
Download Datasheet Parametric Compare View All

BSW67A-T Overview

TRANSISTOR 1000 mA, 120 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-39, BIP General Purpose Small Signal

BSW67A-T Parametric

Parameter NameAttribute value
MakerNXP
package instructionCYLINDRICAL, O-MBCY-W3
Reach Compliance Codeunknown
ECCN codeEAR99
Is SamacsysN
Shell connectionCOLLECTOR
Maximum collector current (IC)1 A
Collector-based maximum capacity20 pF
Collector-emitter maximum voltage120 V
ConfigurationSINGLE
Minimum DC current gain (hFE)10
JEDEC-95 codeTO-39
JESD-30 codeO-MBCY-W3
Number of components1
Number of terminals3
Maximum operating temperature200 °C
Package body materialMETAL
Package shapeROUND
Package formCYLINDRICAL
Polarity/channel typeNPN
Maximum power consumption environment5 W
Certification statusNot Qualified
surface mountNO
Terminal formWIRE
Terminal locationBOTTOM
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)130 MHz
Maximum off time (toff)900 ns
Maximum opening time (tons)500 ns
VCEsat-Max1 V
Base Number Matches1

BSW67A-T Related Products

BSW67A-T BSW66A-T BSW68A-T
Description TRANSISTOR 1000 mA, 120 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-39, BIP General Purpose Small Signal TRANSISTOR 1000 mA, 100 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-39, BIP General Purpose Small Signal TRANSISTOR 1000 mA, 150 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-39, BIP General Purpose Small Signal
Maker NXP NXP NXP
package instruction CYLINDRICAL, O-MBCY-W3 CYLINDRICAL, O-MBCY-W3 CYLINDRICAL, O-MBCY-W3
Reach Compliance Code unknown unknown unknown
ECCN code EAR99 EAR99 EAR99
Shell connection COLLECTOR COLLECTOR COLLECTOR
Maximum collector current (IC) 1 A 1 A 1 A
Collector-based maximum capacity 20 pF 20 pF 20 pF
Collector-emitter maximum voltage 120 V 100 V 150 V
Configuration SINGLE SINGLE SINGLE
Minimum DC current gain (hFE) 10 10 10
JEDEC-95 code TO-39 TO-39 TO-39
JESD-30 code O-MBCY-W3 O-MBCY-W3 O-MBCY-W3
Number of components 1 1 1
Number of terminals 3 3 3
Maximum operating temperature 200 °C 200 °C 200 °C
Package body material METAL METAL METAL
Package shape ROUND ROUND ROUND
Package form CYLINDRICAL CYLINDRICAL CYLINDRICAL
Polarity/channel type NPN NPN NPN
Maximum power consumption environment 5 W 5 W 5 W
Certification status Not Qualified Not Qualified Not Qualified
surface mount NO NO NO
Terminal form WIRE WIRE WIRE
Terminal location BOTTOM BOTTOM BOTTOM
transistor applications SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON SILICON SILICON
Nominal transition frequency (fT) 130 MHz 130 MHz 130 MHz
Maximum off time (toff) 900 ns 900 ns 900 ns
Maximum opening time (tons) 500 ns 500 ns 500 ns
VCEsat-Max 1 V 1 V 1 V

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