Transistors
2SB1589
Silicon PNP epitaxial planar type
Unit: mm
For low-frequency output amplification
■
Features
4.5
±0.1
1.6
±0.2
1.5
±0.1
M
Di ain
sc te
on na
tin nc
ue e/
d
•
Low collector-emitter saturation voltage V
CE(sat)
•
Large collector power dissipation P
C
•
Mini Power type package, allowing downsizing of the equipment
and automatic insertion through the tape packing and the maga-
zine packing.
1
0.4
±0.08
3
2
0.5
±0.08
1.5
±0.1
3˚
4.0
+0.25
–0.20
2.5
±0.1
3˚
0.4
±0.04
■
Absolute Maximum Ratings
T
a
=
25°C
Parameter
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C
T
j
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
*
Junction temperature
Storage temperature
Note) *: Print circuit board: Copper foil area of 1 cm
2
or more, and the board
thickness of 1.7 mm for the collector portion
■
Electrical Characteristics
T
a
=
25°C
±
3°C
Parameter
Symbol
V
CBO
V
EBO
I
CBO
h
FE
f
T
Collector-base voltage (Emiter open)
Collector-emitter voltage (Base open)
e/
Emiter-base voltage (Collector open)
na
nc
Collector-base cutoff current (Emitter open)
Forward current transfer ratio
*1
Collector-emitter saturation voltage
*1
Transition frequency
Collector output capacitance
(Common base, input open circuited)
Forward voltage
*2
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *1: Pulse measurement
*2: Applicable to the built-in diode
Publication date: December 2002
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45˚
1.0
+0.1
–0.2
Rating
−10
−10
−7
−2
1
Unit
V
V
V
A
3.0
±0.15
−1.5
1: Base
2: Collector
3: Emitter
MiniP3-F1 Package
A
Marking Symbol: 1U
W
150
°C
T
stg
−55
to
+150
°C
Conditions
Min
−10
−7
−10
Typ
Max
Unit
V
sc
on
I
C
= −10 µA,
I
E
=
0
I
C
= −1
mA, I
B
=
0
I
E
= −10 µA,
I
C
=
0
V
CB
= −7
V, I
E
=
0
V
CEO
V
Di
V
−1
µA
V
V
CE
= −1
V, I
C
= −400
mA
I
C
= −1
A, I
B
= −25
mA
200
700
ain
V
CE(sat)
C
ob
V
F
−
0.24
−
0.35
190
65
te
V
CB
= −6
V, I
E
=
50 mA, f
=
200 MHz
V
CB
= −10
V, I
E
=
0, f
=
1 MHz
I
F
= −
500 mA
MHz
pF
V
M
−1.3
0.4 max.
2.6
±0.1
SJC00093CED
1
Request for your special attention and precautions in using the technical information and
semiconductors described in this book
(1)
If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
regulations of the exporting country, especially, those with regard to security export control, must be observed.
(2) The technical information described in this book is intended only to show the main characteristics and application circuit examples
of the products, and no license is granted under any intellectual property right or other right owned by our company or any other
company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other
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equipment, communications equipment, measuring instruments and household appliances).
Consult our sales staff in advance for information on the following applications:
–
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–
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provement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product
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(5) When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions
(operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute
maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any
defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure
mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire
or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products.
(6) Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS,
thermal stress and mechanical stress) at the time of handling, mounting or at customer's process. When using products for which
damp-proof packing is required, satisfy the conditions, such as shelf life and the elapsed time since first opening the packages.
(7) This book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita
Electric Industrial Co., Ltd.
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.co inf
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.
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M
ain
te
na
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