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XN0421200L

Description
TRANS PREBIAS DUAL NPN MINI6
Categorysemiconductor    Discrete semiconductor   
File Size236KB,3 Pages
ManufacturerPanasonic
Websitehttp://www.panasonic.co.jp/semicon/e-index.html
Environmental Compliance
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XN0421200L Overview

TRANS PREBIAS DUAL NPN MINI6

XN0421200L Parametric

Parameter NameAttribute value
Transistor type2 NPN pre-biased (dual)
Current - Collector (Ic) (Maximum)100mA
Voltage - collector-emitter breakdown (maximum)50V
Resistor - Substrate (R1)22 kilohms
Resistor - Emitter Base (R2)22 kilohms
DC current gain (hFE) at different Ic, Vce (minimum value)60 @ 5mA,10V
Vce saturation value (maximum value) when different Ib,Ic250mV @ 300µA,10mA
Current - collector cutoff (maximum)500nA
Frequency - Transition150MHz
Power - Max300mW
Installation typesurface mount
Package/casingSOT-23-6
Supplier device packagingMINI6-G1
This product complies with the RoHS Directive (EU 2002/95/EC).
Composite Transistors
XN04212
(XN4212)
Silicon NPN epitaxial planar type
Unit: mm
For switching/digital circuits
Features
4
2.90
+0.20
–0.05
1.9
±0.1
(0.95) (0.95)
5
6
0.16
+0.10
–0.06
1.50
+0.25
–0.05
M
ain
Di
sc te
on na
tin nc
ue e/
d
Two elements incorporated into one package
(Transistors with built-in resistor)
Reduction of the mounting area and assembly cost by one half
3
2
1
0.30
+0.10
–0.05
2.8
+0.2
–0.3
UNR2212 (UN2212)
×
2
Absolute Maximum Ratings
T
a
=
25°C
Parameter
Symbol
V
CBO
V
CEO
I
C
P
T
T
j
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Collector current
Total power dissipation
Junction temperature
Storage temperature
T
stg
on
Parameter
tin
Symbol
V
CBO
V
CEO
I
CBO
I
CEO
I
EBO
h
FE
ue
Electrical Characteristics
T
a
=
25°C
±
3°C
isc
Collector-base voltage (Emitter open)
/D
Collector-emitter voltage (Base open)
Collector-base cutoff current (Emitter open)
Ma
int
en
Collector-emitter cutoff current (Base open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
Collector-emitter saturation voltage
Output voltage high-level
Output voltage low-level
Input resistance
Resistance ratio
Transition frequency
V
CE(sat)
V
OH
V
OL
R
1
R
1
/ R
2
f
T
V
CB
=
10 V, I
E
= −1
mA, f
=
200 MHz
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
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Basic Part Number
0.50
+0.10
–0.05
1.1
+0.2
–0.1
(0.65)
Rating
50
50
Unit
V
V
1: Collector (Tr1)
2: Base (Tr2)
3: Emitter (Tr2)
EIAJ : SC-74
0 to 0.1
100
300
150
mA
°C
mW
°C
Marking Symbol: 8R
Internal Connection
4
−55
to
+150
5
1.1
+0.3
–0.1
4: Collector (Tr2)
5: Base (Tr1)
6: Emitter (Tr1)
Mini6-G1 Package
6
Tr2
Tr1
1
3
2
Conditions
Min
50
Typ
Max
Unit
V
I
C
=
10
µA,
I
E
=
0
I
C
=
2 mA, I
B
=
0
50
ce
V
CB
=
50 V, I
E
=
0
V
CE
=
50 V, I
B
=
0
V
EB
=
6 V, I
C
=
0
0.1
0.5
µA
µA
V
V
an
0.2
mA
V
CE
=
10 V, I
C
=
5 mA
60
I
C
=
10 mA, I
B
=
0.3 mA
0.25
V
CC
=
5 V, V
B
=
0.5 V, R
L
=
1 kΩ
V
CC
=
5 V, V
B
=
2.5 V, R
L
=
1 kΩ
4.9
0.2
−30%
0.8
22
1.0
150
+30%
1.2
kΩ
MHz
Note) The part number in the parenthesis shows conventional part number.
Publication date: March 2004
SJJ00053BED
0.4
±0.2
V
V
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