BYG22A, BYG22B, BYG22D
www.vishay.com
Vishay General Semiconductor
Ultrafast Avalanche SMD Rectifier
FEATURES
• Low profile package
• Ideal for automated placement
• Glass passivated pellet chip junction
• Low reverse current
• Low forward voltage
• Soft recovery characteristic
• Ultra fast reverse recovery time
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C
• AEC-Q101 qualified available
- Automotive ordering code: base P/NHE3 or P/NHM3
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
SMA
(DO-214AC)
PRIMARY CHARACTERISTICS
I
F(AV)
V
RRM
I
FSM
I
R
V
F
at I
F
t
rr
E
R
T
J
max.
Package
Diode variations
2.0 A
50 V, 100 V, 200 V
35 A
1.0 μA
1.1 V
25 ns
20 mJ
150 °C
SMA (DO-214AC)
Single
TYPICAL APPLICATIONS
For use in high frequency rectification and freewheeling
application in switching mode converters and inverters for
consumer, computer, automotive, and telecommunication.
MECHANICAL DATA
Case:
SMA (DO-214AC)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Base P/N-M3 - halogen-free, RoHS-compliant, and
commercial grade
Base P/NHE3_X - RoHS-compliant and AEC-Q101 qualified
Base P/NHM3_X - halogen-free, RoHS-compliant, and
AEC-Q101 qualified
(“_X” denotes revision code e.g. A, B,...)
Terminals:
Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3, M3, HE3, and HM3 suffix meet JESD 201 class 2
whisker test
Polarity:
Color band denotes the cathode end
MAXIMUM RATINGS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Device marking code
Maximum repetitive peak reverse voltage
Average forward current
Peak forward surge current 10 ms single half
sine-wave superimposed on rated load
Pulse energy in avalanche mode,
non repetitive (inductive load switch off)
I
(BR)R
= 1 A, T
J
= 25 °C
Operating junction and storage temperature range
V
RRM
I
F(AV)
I
FSM
E
R
T
J
, T
STG
SYMBOL
BYG22A
BYG22A
50
BYG22B
BYG22B
100
2.0
35
BYG22D
BYG22D
200
V
A
A
UNIT
20
-55 to +150
mJ
°C
Revision: 17-Aug-17
Document Number: 88959
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
BYG22A, BYG22B, BYG22D
www.vishay.com
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Maximum instantaneous
forward voltage
Maximum reverse current
Maximum reverse recovery time
TEST CONDITIONS
I
F
= 1.0 A
I
F
= 2.0 A
V
R
= V
RRM
T
J
= 25 °C
T
J
= 25 °C
T
J
= 100 °C
SYMBOL
V
F (1)
BYG22A
BYG22B
1.0
1.1
1
10
25
BYG22D
UNIT
V
I
R
t
rr
µA
ns
I
F
= 0.5 A, I
R
= 1.0 A, I
rr
= 0.25 A
Note
(1)
Pulse test: 300 μs pulse width, 1 % duty cycle
THERMAL CHARACTERISTICS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Maximum thermal resistance, junction to lead, T
L
= const.
SYMBOL
R
JL
R
JA
(1)
Maximum thermal resistance, junction to ambient
R
JA
(2)
R
JA
(3)
Notes
Mounted on epoxy-glass hard tissue
(2)
Mounted on epoxy-glass hard tissue, 50 mm
2
35 μm Cu
(3)
Mounted on Al-oxide-ceramic (Al O ), 50 mm
2
35 μm Cu
2 3
(1)
BYG22A
BYG22B
25
150
125
100
BYG22D
UNIT
°C/W
°C/W
ORDERING INFORMATION
(Example)
PREFERRED P/N
BYG22D-E3/TR
BYG22D-E3/TR3
BYG22DHE3_A/H
(1)
BYG22DHE3_A/I
(1)
BYG22D-M3/TR
BYG22D-M3/TR3
BYG22DHM3_A/H
(1)
BYG22DHM3_A/I
(1)
Note
(1)
AEC-Q101 qualified
UNIT WEIGHT (g)
0.064
0.064
0.064
0.064
0.064
0.064
0.064
0.064
PREFERRED PACKAGE CODE
TR
TR3
H
I
TR
TR3
H
I
BASE QUANTITY
1800
7500
1800
7500
1800
7500
1800
7500
DELIVERY MODE
7" diameter plastic tape and reel
13" diameter plastic tape and reel
7" diameter plastic tape and reel
13" diameter plastic tape and reel
7" diameter plastic tape and reel
13" diameter plastic tape and reel
7" diameter plastic tape and reel
13" diameter plastic tape and reel
Revision: 17-Aug-17
Document Number: 88959
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
BYG22A, BYG22B, BYG22D
www.vishay.com
Vishay General Semiconductor
RATINGS AND CHARACTERISTICS CURVES
(T
A
= 25 °C unless otherwise noted)
10
50
Reverse Power Dissipation (mW)
V
R
=
V
RRM
40
Forward Current (A)
1
T
J
= 150 °C
T
J
= 25 °C
30
P
R
- Limit
at 100 %
V
R
P
R
- Limit
at
80
%
V
R
0.1
20
0.01
10
0.001
0.0
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
25
50
75
100
125
150
Forward
Voltage
(V)
Junction Temperature (°C)
Fig. 1 - Forward Current vs. Forward Voltage
Fig. 4 - Max. Reverse Power Dissipation vs. Junction Temperature
2.5
V
R
=
V
RRM
Half Sine-Wave
R
θJA
≤
25 K/W
1.5
70
f = 1 MHz
60
Average Forward Current (A)
Diode Capacitance (pF)
100
120
140
160
2.0
50
40
30
20
10
1.0
R
θJA
≤
125 K/W
0.5
R
θJA
≤
150 K/W
0
0
20
40
60
80
0
0.1
1
10
100
Ambient Temperature (°C)
Reverse
Voltage
(V)
Fig. 2 - Max. Average Forward Current vs. Ambient Temperature
Fig. 5 - Diode Capacitance vs. Reverse Voltage
100
V
R
=
V
RRM
140
T
A
= 125 °C
120
100
80
60
40
20
I
R
= 0.5 A, i
R
= 0.125 A
0
25
50
75
100
125
150
0
0.2
0.4
0.6
0.8
1.0
T
A
= 100 °C
T
A
= 75 °C
T
A
= 50 °C
10
Reverse Recovery Time (ns)
Reverse Current (µA)
T
A
= 25 °C
1
Junction Temperature (°C)
Forward Current (A)
Fig. 3 - Reverse Current vs. Junction Temperature
Fig. 6 - Max. Reverse Recovery Time vs. Forward Current
Revision: 17-Aug-17
Document Number: 88959
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
BYG22A, BYG22B, BYG22D
www.vishay.com
Vishay General Semiconductor
Thermal Resistance for Pulse Cond. (K/W)
1000
60
T
A
= 125 °C
Reverse Recovery Charge (nC)
50
T
A
= 100 °C
40
T
A
= 75 °C
30
T
A
= 50 °C
20
T
A
= 25 °C
10
I
R
= 0.5 A, i
R
= 0.125 A
0
0
0.2
0.4
0.6
0.8
1.0
125 K/W DC
100
t
p
/T = 0.5
t
p
/T = 0.2
t
p
/T = 0.1
10
t
p
/T = 0.05
t
p
/T = 0.02
Single Pulse
t
p
/T = 0.01
1
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
Forward Current (A)
Pulse Length (s)
Fig. 7 - Max. Reverse Recovery Charge vs. Forward Current
Fig. 8 - Thermal Response
PACKAGE OUTLINE DIMENSIONS
in inches (millimeters)
SMA
(DO-214AC)
Cathode Band
Mounting Pad Layout
0.074 (1.88)
MAX.
0.065 (1.65)
0.049 (1.25)
0.110 (2.79)
0.100 (2.54)
0.066 (1.68)
MIN.
0.177 (4.50)
0.157 (3.99)
0.012 (0.305)
0.006 (0.152)
0.060 (1.52)
MIN.
0.208 (5.28)
REF.
0.090 (2.29)
0.078 (1.98)
0.060 (1.52)
0.030 (0.76)
0.008 (0.203)
0 (0)
0.208 (5.28)
0.194 (4.93)
Revision: 17-Aug-17
Document Number: 88959
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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Vishay
Disclaimer
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
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particular product with the properties described in the product specification is suitable for use in a particular application.
Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s
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including but not limited to the warranty expressed therein.
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© 2017 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
Revision: 08-Feb-17
1
Document Number: 91000