BUK552-100A127 datasheet, PDF - EEWORLD Datasheet

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BUK552-100A127: DescriptionTRANSISTOR 10 A, 100 V, 0.28 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, FET General Purpose Power; CategoryThe transistor; File Size246KB，5 Pages; ManufacturerNXP; Websitehttps://www.nxp.com

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BUK552-100A127 Overview

TRANSISTOR 10 A, 100 V, 0.28 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, FET General Purpose Power

BUK552-100A127 Parametric

Parameter Name	Attribute value
Maker	NXP
package instruction	FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code	unknown
ECCN code	EAR99
Is Samacsys	N
Other features	LOGIC LEVEL COMPATIBLE
Avalanche Energy Efficiency Rating (Eas)	30 mJ
Shell connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	100 V
Maximum drain current (ID)	10 A
Maximum drain-source on-resistance	0.28 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-220AB
JESD-30 code	R-PSFM-T3
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	175 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Polarity/channel type	N-CHANNEL
Maximum pulsed drain current (IDM)	40 A
Certification status	Not Qualified
surface mount	NO
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
transistor applications	SWITCHING
Transistor component materials	SILICON
Base Number Matches	1

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BUK552-100A127 Related Products

	BUK552-100A127	BUK552-100A	BUK552-100A,127	BUK552-100B	BUK552-100B,127	BUK552-100B127
Description	TRANSISTOR 10 A, 100 V, 0.28 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, FET General Purpose Power	TRANSISTOR 10 A, 100 V, 0.28 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, PLASTIC, TO-220AB, 3 PIN, FET General Purpose Power	10A, 100V, 0.28ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB	TRANSISTOR 8.5 A, 100 V, 0.35 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, PLASTIC, TO-220AB, 3 PIN, FET General Purpose Power	8.5A, 100V, 0.35ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB	TRANSISTOR 8.5 A, 100 V, 0.35 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, FET General Purpose Power
Maker	NXP	NXP	NXP	NXP	NXP	NXP
package instruction	FLANGE MOUNT, R-PSFM-T3	PLASTIC, TO-220AB, 3 PIN	FLANGE MOUNT, R-PSFM-T3	PLASTIC, TO-220AB, 3 PIN	FLANGE MOUNT, R-PSFM-T3	FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown	unknown
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
Is Samacsys	N	N	N	N	N	N
Other features	LOGIC LEVEL COMPATIBLE	LOGIC LEVEL COMPATIBLE	LOGIC LEVEL COMPATIBLE	LOGIC LEVEL COMPATIBLE	LOGIC LEVEL COMPATIBLE	LOGIC LEVEL COMPATIBLE
Avalanche Energy Efficiency Rating (Eas)	30 mJ	30 mJ	30 mJ	30 mJ	30 mJ	30 mJ
Shell connection	DRAIN	DRAIN	DRAIN	DRAIN	DRAIN	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	100 V	100 V	100 V	100 V	100 V	100 V
Maximum drain current (ID)	10 A	10 A	10 A	8.5 A	8.5 A	8.5 A
Maximum drain-source on-resistance	0.28 Ω	0.28 Ω	0.28 Ω	0.35 Ω	0.35 Ω	0.35 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-220AB	TO-220AB	TO-220AB	TO-220AB	TO-220AB	TO-220AB
JESD-30 code	R-PSFM-T3	R-PSFM-T3	R-PSFM-T3	R-PSFM-T3	R-PSFM-T3	R-PSFM-T3
Number of components	1	1	1	1	1	1
Number of terminals	3	3	3	3	3	3
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE
Maximum operating temperature	175 °C	175 °C	175 °C	175 °C	175 °C	175 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT
Polarity/channel type	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL
Maximum pulsed drain current (IDM)	40 A	40 A	40 A	34 A	34 A	34 A
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	NO	NO	NO	NO	NO	NO
Terminal form	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE
Terminal location	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
transistor applications	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
Base Number Matches	1	1	1	1	1	1

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