VS-130MT...C Series
www.vishay.com
Vishay Semiconductors
Three Phase Bridge, 130 A
(Power Modules)
FEATURES
• Blocking voltage up to 1800 V
• High surge capability
• High thermal conductivity package, electrically
insulated case
• Excellent power volume ratio
• 3600 V
RMS
isolating voltage
• UL approved file E78996
• Designed for industrial level
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
MTC
DESCRIPTION
PRIMARY CHARACTERISTICS
I
O
V
RRM
Package
Circuit configuration
130 A at 120 °C
1600 V to 1800 V
MTC
Three phase bridge
A range of extremely compact, encapsulated three phase
bridge rectifiers offering efficient and reliable operation.
They are intended for use in general purpose and heavy duty
applications.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
I
O (1)
I
FSM
I
2
t
I
2
t
V
RRM
T
Stg
T
J
Range
Range
Range
CHARACTERISTICS
VALUES
218
T
C
50 Hz
60 Hz
50 Hz
60 Hz
85
1270
1330
8095
7390
80 955
1600 to 1800
-40 to +125
-40 to +150
UNITS
A
°C
A
A
2
s
A
2
s
V
°C
°C
Note
(1)
Maximum output current must be limited to 220 A to do not exceed the maximum temperature of terminals
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE NUMBER
VOLTAGE
CODE
160
180
V
RRM
, MAXIMUM REPETITIVE
PEAK REVERSE VOLTAGE
V
1600
1800
V
RSM
, MAXIMUM NON-REPETITIVE
PEAK REVERSE VOLTAGE
V
1700
1900
I
RRM
MAXIMUM
AT T
J
= MAXIMUM
mA
12
VS-130MT...C
Revision: 02-Mar-18
Document Number: 95887
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-130MT...C Series
www.vishay.com
Vishay Semiconductors
SYMBOL
I
O
TEST CONDITIONS
120° rect. conduction angle
t = 10 ms
No voltage
reapplied
100 % V
RRM
reapplied
No voltage
reapplied
100 % V
RRM
reapplied
VALUES
130
120
1270
1330
1070
Initial
T
J
= T
J
maximum
1120
8095
7390
5725
5225
80 955
0.79
0.96
4.97
4.63
2.05
3600
A
2
s
V
A
2
s
A
UNITS
A
°C
FORWARD CONDUCTION
PARAMETER
Maximum DC output current
at case temperature
Maximum peak, one-cycle forward,
non-repetitive surge current
I
FSM
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
Maximum I
2
t for fusing
I
2
t
t = 8.3 ms
t = 10 ms
t = 8.3 ms
Maximum I
2
t
for fusing
Low level value of threshold voltage
High level value of threshold voltage
Low level value of forward slope resistance
High level of forward slope resistance
Maximum forward voltage drop
RMS isolation voltage
I
2
t
V
FT(TO)1
V
FT(TO)2
r
f1
r
f2
V
FM
V
ISOL
t = 0.1 ms to 10 ms, no voltage reapplied
(16.7 % x
x I
F(AV)
< I <
x I
F(AV)
), T
J
maximum
(I >
x I
F(AV)
), T
J
maximum
16.7 % x
x I
F(AV)
< I <
x I
F(AV)
, T
J
maximum
(I >
x I
F(AV)
), T
J
maximum
I
pk
= 300 A, T
J
= 25 °C, per junction
T
J
= 25 °C, all terminal shorted f = 50 Hz, t = 1 s
m
V
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction operating
Maximum storage temperature
Maximum thermal resistance,
junction to case
Typical thermal resistance,
case to heatsink
Mounting torque
± 15 %
Approximate weight
to heatsink
to terminal
SYMBOL
T
J
T
Stg
R
thJC
R
thCS
DC operation per module
DC operation per junction
Per module
Mounting surface smooth, flat, and greased
A mounting compound is recommended and the
torque should be rechecked after a period of 3 h to
allow for the spread of the compound. Lubricated
threads.
TEST CONDITIONS
VALUES
-40 to +150
-40 to +125
0.068
0.41
0.03
5
5
235
Nm
g
°C/W
UNITS
°C
R
CONDUCTION PER JUNCTION
DEVICES
VS-130MT...C Series
SINE HALF WAVE CONDUCTION
180°
0.052
120°
0.06
90°
0.075
60°
0.106
30°
0.164
RECTANGULAR WAVE CONDUCTION
180°
0.038
120°
0.063
90°
0.081
60°
0.109
30°
0.165
UNITS
°C/W
Note
• Table shows the increment of thermal resistance R
thJC
when devices operate at different conduction angles than DC
Revision: 02-Mar-18
Document Number: 95887
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-130MT...C Series
www.vishay.com
Vishay Semiconductors
Instantaneous Forward Current (A)
1000
Maximum Allowable Case Temperature
(°C)
150
140
130
120
110
100
90
80
70
60
50
0
30
60
90 120 150 180 210 240 270 300
120°
(Rect.)
100
T
J
= 150 °C
10
T
J
= 25 °C
1
0
0.5
1.0
1.5
2.0
Per Junc on
2.5
3.0
3.5
Total Output Current (A)
Fig. 1 - Current Ratings Characteristics
Instantaneous Forward Voltage (V)
Fig. 2 - Forward Voltage Drop Characteristics
500
500
Maximum Total Power Loss (W)
450
400
350
300
250
200
150
100
50
0
0
Maximum Total Power Loss (W)
T
J
= 150 °C
450
400
350
0.15 °C/W
0.2 °C/W
0.25 °C/W
R
thSA
= 0.1 °C/W
120°
(Rect.)
300
250
200
150
100
50
0
0
0.3 °C/W
0.4 °C/W
0.5 °C/W
0.7 °C/W
0.9 °C/W
1.1 °C/W
2.0 °C/W
20
40
60
80
100
120
140
160
25
50
75
100
125
150
Total Output Current (A)
Maximum Allowable Ambient Temperature (°C)
Fig. 3 - Total Power Loss Characteristics
1200
1100
1000
900
800
700
600
500
400
Per junction
300
1
Peak Half
Sine
Wave Forward Current (A)
Peak Half
Sine
Wave Forward Current (A)
At rated load condition and with
V
RRM
applied following
surge.
Initial T
J
= 150 °C
at 60 Hz 0.0083
s
at 50 Hz 0.0100
s
1300
1200
1100
1000
900
800
700
600
500
400
Per junction
300
0.01
0.1
1
Maximum non - repetitive
surge
current vs. pulse train duration.
Initial T
J
= 150 °C
No voltage reapplied
Rated V
RRM
reapplied
10
100
Number of Equal Amplitude
Half Cycle Current Pulses (N)
Fig. 4 - Maximum Non-Repetitive Surge Current
Pulse Train Duration (s)
Fig. 5 - Maximum Non-Repetitive Surge Current
Revision: 02-Mar-18
Document Number: 95887
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-130MT...C Series
www.vishay.com
Vishay Semiconductors
Z
thJC
- Thermal Impedance (°C/W)
10
Steady state
value
R
th JC
= 0.41 °C/W
per junction
(DC operating)
1
0.1
0.01
0.001
0.01
0.1
1
10
t
1
- Rectangular Pulse Duration (s)
Fig. 6 - Thermal Impedance Z
thJC
Characteristic
ORDERING INFORMATION TABLE
Device code
VS-
1
1
2
3
4
5
-
-
-
-
-
13
2
0
3
MT
4
160
5
C
Vishay Semiconductors product
Current rating code: 13 = 130 A (average)
Circuit configuration (three phase diodes bridge)
Package indicator
Voltage code x 10 = V
RRM
(see Voltage Ratings table)
CIRCUIT CONFIGURATION
+
~
-
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?96003
Revision: 02-Mar-18
Document Number: 95887
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Outline Dimensions
www.vishay.com
Vishay Semiconductors
MTC
DIMENSIONS
in millimeters
5-M6
Screwing
depth
max. 10
3
52
13
Ø
6
.5
6.5
54
27
+
-
25
65
72
80
94
Revision: 03-Jun-16
Document Number: 96003
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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