DMP3026SFDE
P-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V
(BR)DSS
-30V
R
DS(ON)
max
19mΩ @ V
GS
= -10V
45mΩ @ V
GS
= -4.5V
I
D
max
T
A
= +25°C
-8.7A
-5.5A
Features and Benefits
0.6mm profile – ideal for low profile applications
Low Gate Threshold Voltage
Low On-Resistance
ESD protected Gate
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
NEW PRODUCT
ADVANCE
ADVANCED INFORMATION
Description and Applications
This MOSFET is designed to minimize the on-state resistance
(R
DS(ON)
) and yet maintain superior switching performance, making it
ideal for high-efficiency power management applications.
Battery Management Application
Power Management Functions
DC-DC Converters
Mechanical Data
Case: U-DFN2020-6 (Type E)
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish – NiPdAu over Copper Leadframe.
Solderable per MIL-STD-202, Method 208
e4
Weight: 0.007 grams (Approximate)
U-DFN2020-6 (Type E)
Pin1
6 D
5 D
4 S
ESD PROTECTED
D
D 1
D 2
S
G 3
Gate Protection
Diode
G
Top View
Bottom View
Pin Out
Bottom View
S
Equivalent Circuit
Ordering Information
(Note 4)
Part Number
DMP3026SFDE-7
DMP3026SFDE-13
Notes:
Case
U-DFN2020-6 (Type E)
U-DFN2020-6 (Type E)
Packaging
3,000/Tape & Reel
10,000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and
Antimony-free, "Green" and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total
Br + Cl) and <1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
7P
7P = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: D = 2016)
M = Month (ex: 9 = September)
Date Code Key
Year
Code
Month
Code
2016
D
Jan
1
Feb
2
2017
E
Mar
3
2018
F
Apr
4
May
5
YM
2019
G
Jun
6
2020
H
Jul
7
Aug
8
2021
I
Sep
9
2022
J
Oct
O
Nov
N
2023
K
Dec
D
DMP3026SFDE
Document number: DS38679 Rev. 1 - 2
1 of 6
www.diodes.com
August 2016
© Diodes Incorporated
DMP3026SFDE
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 6) V
GS
= -10V
Steady
State
t<10s
Pulsed Drain Current (10μs pulse, duty cycle = 1%)
Continuous Source-Drain Diode Current (Note 6)
Avalanche Current (Note 7) L = 0.1mH
Avalanche Energy (Note 7) L = 0.1mH
T
A
= +25°C
T
A
= +25°C
T
A
= +70°C
T
A
= +25°C
T
A
= +70°C
Symbol
V
DSS
V
GSS
I
D
I
D
I
DM
I
S
I
AS
E
AS
Value
-30
±25
-8.7
-6.9
-10.4
-8.4
-50
-2.0
-23
27
Units
V
V
A
A
A
A
A
mJ
NEW PRODUCT
ADVANCE
ADVANCED INFORMATION
Thermal Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Total Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient (Note 6)
Thermal Resistance, Junction to Case (Note 6)
Operating and Storage Temperature Range
T
A
= +25°C
T
A
= +70°C
Steady state
t<10s
T
A
= +25°C
T
A
= +70°C
Steady state
t<10s
Steady state
Symbol
P
D
R
JA
P
D
R
JA
R
JC
T
J,
T
STG
Value
0.72
0.46
175
121
2.0
1.3
61
42
9.3
-55 to +150
Units
W
°C/W
W
°C/W
°C
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current T
J
= +25°C
Zero Gate Voltage Drain Current T
J
= +150°C (Note 9)
Gate-Source Leakage
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge (V
GS
= -10V)
Total Gate Charge (V
GS
= -4.5V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Reverse Recovery Time
Reverse Recovery Charge
Notes:
Symbol
BV
DSS
I
DSS
I
GSS
V
GS(th)
R
DS (ON)
V
SD
C
iss
C
oss
C
rss
R
g
Q
g
Q
g
Q
gs
Q
gd
t
D(on)
t
r
t
D(off)
t
f
t
rr
Q
rr
Min
-30
—
—
—
-1
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ
—
—
—
—
—
15
28
34
-0.7
1,204
154
112
16
19.6
9.2
4.3
3.9
5.3
23
34
26
10
3.3
Max
—
-1
-100
±10
-3
19
45
54
-1.2
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Unit
V
µA
µA
V
mΩ
V
Test Condition
V
GS
= 0V, I
D
= -250μA
V
DS
= -24V, VGS = 0V
V
GS
= ±25V, VDS = 0V
V
DS
= V
GS
, I
D
= -250μA
V
GS
= -10V, I
D
= -4.5A
V
GS
= -4.5V, I
D
= -3.5A
V
GS
= -4.0V, I
D
= -3.0A
V
GS
= 0V, I
S
= -1.0A
V
DS
= -15V, V
GS
= 0V,
f = 1.0MHz
V
DS
= 0V, V
GS
= 0V, f = 1MHz
V
DS
= -15V, I
D
= -9.5A
pF
Ω
nC
ns
V
DS
= -15V, V
GS
= -10V,
R
G
= 6Ω, I
D
= -9.5A
ns
nC
I
F
= -9.5A, di/dt = 100A/μs
5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
7. I
AS
and E
AS
rating are based on low frequency and duty cycles to keep T
J
= 25°C.
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to product testing.
DMP3026SFDE
Document number: DS38679 Rev. 1 - 2
2 of 6
www.diodes.com
August 2016
© Diodes Incorporated
DMP3026SFDE
30
V
GS
= -10.0V
V
GS
= -5.0V
V
GS
= -4.0V
30
25
I
D
, DRAIN CURRENT (A)
I
D
, DRAIN CURRENT (A)
V
GS
= -4.5V
25
V
DS
= -5.0V
20
V
GS
= -3.5V
20
NEW PRODUCT
ADVANCE
ADVANCED INFORMATION
15
15
10
V
GS
= -3.0V
10
T
A
= 150
C
T
A
= 125 C
T
A
= 85 C
T
A
= 25
C
T
A
= -55 C
5
5
V
GS
= -2.5V
0
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
V
DS
, DRAIN-SOURCE VOLTAGE(V)
Figure1 Typical Output Characteristic
0
0
1
2
3
4
5
V
GS
, GATE-SOURCE VOLTAGE (V)
Figure 2 Typical Transfer Characteristic
6
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (
)
R
D S(ON )
, DRAIN-SOURCE ON-RESISTANCE (
)
0.1
0.06
I
D
= -4.5A
0.08
V
GS
= -4.0V
0.05
0.04
0.06
V
GS
= -4.5V
0.03
I
D
= -3.5A
0.04
0.02
0.02
V
GS
= -10.0V
0.01
0
0
0
0
5
10
15
20
25
V
GS
, GATE-SOURCE VOLTAGE (V)
Figure 4 Typical Drain-Source On-Resistance
vs. Gate-Source Voltage
5
10
15
20
25
30
I
D
, DRAIN SOURCE CURRENT (A)
Figure 3 Typical On-Resistance vs.
Drain Current and Gate Voltage
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (
)
0.03
V
GS
= -10V
T
A
= 150 C
T
A
= 125
C
2
1.8
R
DS(ON)
, DRAIN-SOURCE
ON-RESISTANCE (NORMALIZED)
0.025
1.6
1.4
1.2
1
0.8
0.6
0.4
0.2
V
GS
= -10V
I
D
= -4.5A
0.02
T
A
= 85 C
T
A
= 25
C
0.015
T
A
= -55
C
V
GS
= -4.5V
I
D
= -3.5A
0.01
0.005
0
0
5
10
15
20
25
30
I
D
, DRAIN SOURCE CURRENT (A)
Figure 5 Typical On-Resistance vs.
Drain Current and Temperature
0
-50
-25
0
25
50
75
100
125
150
T
J
, JUNCTION TEMPERATURE (
C)
Figure 6 On-Resistance Variation with Temperature
DMP3026SFDE
Document number: DS38679 Rev. 1 - 2
3 of 6
www.diodes.com
August 2016
© Diodes Incorporated
DMP3026SFDE
R
D S(on)
, DRAIN-SOURCE ON-RESISTANCE (
)
0.06
3.5
V
GS(TH)
, GATE THRESHOLD VOLTAGE (V)
0.05
3
2.5
I
D
= 250µA
0.04
V
GS
= -4.5V
NEW PRODUCT
ADVANCE
ADVANCED INFORMATION
2
1.5
1
0.5
0
-50
I
D
= 1mA
0.03
I
D
= -3.5A
0.02
0.01
V
GS
= -10V
I
D
= -4.5A
0
-50
-25
0
25
50
75
100
125
150
T
J
, JUNCTION TEMPERATURE (
C)
Figure 7 On-Resistance Variation with Temperature
-25
0
25
50
75
100 125 150
T
J
, JUNCTION TEMPERATURE (°C)
Figure 8 Gate Threshold Variation vs. Junction Temperature
10000
30
C
T
, JUNCTION CAPACITANCE (pF)
25
C
iss
I
S
, SOURCE CURRENT (A)
20
T
J
= 150
C
T
J
= 25
C
1000
15
C
oss
10
T
J
= 125
C
T
J
= -55
C
100
C
rss
5
T
J
= 85
C
f=1MHz
0
0
0.3
0.6
0.9
1.2
V
SD
, SOURCE-DRAIN VOLTAGE (V)
Figure 9 Diode Forward Voltage vs. Current
1.5
10
0
5
10
15
20
25
30
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 10 Typical Junction Capacitance
10
100
R
DS(on)
Limited
P
W
= 100µs
V
GS
GATE THRESHOLD VOLTAGE (V)
8
I
D
, DRAIN CURRENT (A)
10
6
V
DS
= -15V
I
D
= -9.5A
1
DC
P
W
= 10s
P
W
= 1s
P
W
= 100ms
P
W
= 10ms
T
J(ma x)
= 150°C
T
A
= 25°C
P
W
= 1ms
V
GS
= -10V
Single Pulse
DUT on 1 * MRP Board
4
0.1
2
0
0
2
4
6
8
10
12
14
16
18
20
Q
g
, TOTAL GATE CHARGE (nC)
Figure 11 Gate Charge
0.01
0.1
1
10
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 12 SOA, Safe Operation Area
100
DMP3026SFDE
Document number: DS38679 Rev. 1 - 2
4 of 6
www.diodes.com
August 2016
© Diodes Incorporated
DMP3026SFDE
1
D = 0.9
D = 0.7
r(t), TRANSIENT THERMAL RESISTANCE
D = 0.5
D = 0.3
NEW PRODUCT
ADVANCE
ADVANCED INFORMATION
0.1
D = 0.1
D = 0.05
D = 0.02
0.01
D = 0.01
D = 0.005
R
JA
(t) = r(t) * R
JA
R
JA
= 171°C/W
Duty Cycle, D = t1/ t2
0.001
0.01
0.1
1
10
100
1000
D = Single Pulse
0.001
0.00001
0.0001
t1, PULSE DURATION TIME (sec)
Figure 13 Transient Thermal Resistance
Package Outline Dimensions
Please see http://www.diodes.com/package-outlines.html for the latest version.
U-DFN2020-6 (Type E)
A3
A
A1
D
b1
D2
E E2
L1
K1
L(2X)
K2
Z(4X)
e
b(6X)
U-DFN2020-6
Type E
Dim Min Max
Typ
A
0.57 0.63
0.60
A1
0
0.05
0.03
A3
0.15
b
0.25 0.35
0.30
b1
0.185 0.285 0.235
D
1.95 2.05
2.00
D2
0.85 1.05
0.95
E
1.95 2.05
2.00
E2
1.40 1.60
1.50
e
0.65
L
0.25 0.35
0.30
L1
0.82 0.92
0.87
K1
0.305
K2
0.225
Z
0.20
All Dimensions in mm
DMP3026SFDE
Document number: DS38679 Rev. 1 - 2
5 of 6
www.diodes.com
August 2016
© Diodes Incorporated
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