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UP0121300L

Description
TRANS PREBIAS DUAL NPN SSMINI5
Categorysemiconductor    Discrete semiconductor   
File Size237KB,3 Pages
ManufacturerPanasonic
Websitehttp://www.panasonic.co.jp/semicon/e-index.html
Environmental Compliance
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UP0121300L Overview

TRANS PREBIAS DUAL NPN SSMINI5

UP0121300L Parametric

Parameter NameAttribute value
Transistor type2 NPN pre-biased (dual)
Current - Collector (Ic) (Maximum)100mA
Voltage - collector-emitter breakdown (maximum)50V
Resistor - Substrate (R1)47 kiloohms
Resistor - Emitter Base (R2)47 kiloohms
DC current gain (hFE) at different Ic, Vce (minimum value)80 @ 5mA,10V
Vce saturation value (maximum value) when different Ib,Ic250mV @ 300µA,10mA
Current - collector cutoff (maximum)500nA
Frequency - Transition150MHz
Power - Max125mW
Installation typesurface mount
Package/casingSOT-665
Supplier device packagingSSMini5-F2
This product complies with the RoHS Directive (EU 2002/95/EC).
Composite Transistors
UP01213
Silicon NPN epitaxial planar type
5
Unit: mm
(0.30)
4
1.20
±0.05
1.60
±0.05
0.20
–0.02
+0.05
0.10
±0.02
For digital circuits
Features
1
2
3
(0.50) (0.50)
1.00
±0.05
1.60
±0.05
M
ain
Di
sc te
on na
tin nc
ue e/
d
Two elements incorporated into one package
(Transistors with built-in resistor)
Reduction of the mounting area and assembly cost by one half
Display at No.1 lead
(0.20)
UNR1213
×
2
Absolute Maximum Ratings
T
a
=
25°C
Parameter
Symbol
V
CBO
V
CEO
I
C
P
T
T
j
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Collector current
Total power dissipation
Junction temperature
Storage temperature
T
stg
isc
on
Parameter
tin
Electrical Characteristics
T
a
=
25°C
±
3°C
Symbol
V
CBO
V
CEO
I
CBO
I
CEO
I
EBO
h
FE
Collector-base voltage (Emitter open)
ce
Collector-emitter voltage (Base open)
an
Collector-base cutoff current (Emitter open)
Ma
int
en
Collector-emitter cutoff current (Base open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
Collector-emitter saturation voltage
Output voltage high-level
Output voltage low-level
Input resistance
Resistance ratio
Transition frequency
V
CE(sat)
V
OH
V
OL
R
1
R
1
/ R
2
f
T
V
CB
=
10 V, I
E
= −2
mA, f
=
200 MHz
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
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Rating
50
50
Unit
V
V
1: Base (Tr1)
2: Emitter
3: Base (Tr2)
0 to 0.02
4: Collector (Tr2)
5: Collector (Tr1)
SSMini5-F2 Package
Marking Symbol: 9L
Internal Connection
(C1)
5
100
125
125
mA
°C
mW
°C
−55
to
+125
(C2)
4
Tr1
Tr2
R1
(47 kΩ)
R2
R2
(47 kΩ) (47 kΩ)
R1
(47 kΩ)
1
(B1)
2
(E)
3
(B2)
ue
Conditions
Min
50
Typ
Max
Unit
V
I
C
=
10
µA,
I
E
=
0
I
C
=
2 mA, I
B
=
0
/D
50
V
V
CB
=
50 V, I
E
=
0
V
CE
=
50 V, I
B
=
0
V
EB
=
6 V, I
C
=
0
0.1
0.5
µA
µA
V
V
0.1
mA
V
CE
=
10 V, I
C
=
5 mA
80
I
C
=
10 mA, I
B
=
0.3 mA
0.25
V
CC
=
5 V, V
B
=
0.5 V, R
L
=
1 kΩ
V
CC
=
5 V, V
B
=
3.5 V, R
L
=
1 kΩ
4.9
0.2
−30%
0.8
47
1.0
150
+30%
1.2
V
kΩ
MHz
0.10 max
Basic Part Number
0.55
±0.05
(0.20)
Publication date: August 2004
SJJ00298AED
1

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