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MRF8372GR2

Description
TRANS NPN 16V 200MA SO8
Categorysemiconductor    Discrete semiconductor   
File Size166KB,5 Pages
ManufacturerMicrosemi
Websitehttps://www.microsemi.com
Environmental Compliance
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MRF8372GR2 Overview

TRANS NPN 16V 200MA SO8

MRF8372GR2 Parametric

Parameter NameAttribute value
Transistor typeNPN
Voltage - collector-emitter breakdown (maximum)16V
Frequency - Transition870MHz
Noise figure (dB, typical values ​​at different f)-
Gain8dB ~ 9.5dB
Power - Max2.2W
DC current gain (hFE) at different Ic, Vce (minimum value)30 @ 50mA,5V
Current - Collector (Ic) (Maximum)200mA
Operating temperature-
Installation typesurface mount
Package/casing8-SOIC (0.154", 3.90mm wide)
Supplier device packaging8-SO
140 COMMERCE DRIVE
MONTGOMERYVILLE, PA
18936-1013
PHONE: (215) 631-9840
FAX: (215) 631-9855
MRF555
RF & MICROWAVE DISCRETE
LOW POWER TRANSISTORS
Features
Specified @ 12.5 V, 470 MHz Characteristics
Output Power = 1.5 W
Minimum Gain = 11 dB
Efficiency 60% (Typ)
Cost Effective PowerMacro Package
Electroless Tin Plated Leads for Improved Solderability
Power Macro
Designed primarily for wideband large signal stages in
the UHF frequency range.
DESCRIPTION:
ABSOLUTE MAXIMUM RATINGS
(Tcase = 25
°
C)
Symbol
V
CEO
V
CBO
V
EBO
I
C
Parameter
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Value
16
30
3.0
500
Unit
Vdc
Vdc
Vdc
mA
Thermal Data
P
D
Total Device Dissipation @ TC = 75ºC
Derate above 75ºC
3.0
40
Watts
mW/ ºC
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