PC851XNNSZ1H Series
PC851XNNSZ1H
Series
DIP 4pin
High Collector-emitter Voltage
Photocoupler
Description
PC851XNNSZ1H Series
contains an IRED optically
coupled to a phototransistor.
It is packaged in a 4-pin DIP, available in SMT gull-
wing lead-form option.
Input-output isolation voltage(rms) is 5.0kV.
Collector-emitter voltage is 350V.
Agency approvals/Compliance
1. Recognized by UL1577, file No. E64380
(as model No. PC851)
2. Package resin : UL flammability grade (94V-0)
Applications
1. Telephone line interface/isolation
2. Interface to power supply circuit
3. Controller for SSRs, DC moters
Features
1. 4pin DIP package
2. Double transf er m old package
(Ideal for F l ow Soldering)
3. High collector-emitter voltage (V
CEO
: 350V)
4. High isolation voltage between input and output
(V
iso(rms)
: 5.0 kV)
5. Lead-free and RoHS directive compliant
Notice The content of data sheet is subject to change without prior notice.
In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that may occur in equipment using any SHARP
devices shown in catalogs, data books, etc. Contact SHARP in order to obtain the latest device specification sheets before using any SHARP device.
Sheet No .: OP18005EN
1
Date Jan. 15. 2018
© SHARP Corporation
PC851XNNSZ1H Series
Date code indication (Ex.)
3-digit number shall be marked the age indication of 1-digit number, and week code of 2-digit number.
Week code “01” indicate the week including the first Thursday of January. And later, Monday is the starting
point.
Year
Week
Date code
652
701
702
703
・
・
・
752
751
752
801
MON
12/26
1/2
1/9
1/16
・
・
・
12/11
12/18
12/25
1/1
TUE
12/27
1/3
1/10
1/17
・
・
・
12/12
12/19
12/26
1/2
WED
12/28
1/4
1/11
1/18
・
・
・
12/13
12/20
12/27
1/3
THU
12/29
1/5
1/12
1/19
・
・
・
12/14
12/21
12/28
1/4
FRI
12/30
1/6
1/13
1/20
・
・
・
12/15
12/22
12/29
1/5
SAT
12/31
1/7
1/14
1/21
・
・
・
12/16
12/23
12/30
1/6
SUN
1/1
1/8
1/15
1/22
・
・
・
12/17
12/24
12/31
1/7
Factory identification mark and Plating material
Factory identification Mark
K
Country of origin
Japan
Plating material
SnBi (Bi : 1
½
4%)
Rank mark
Refer to the Model Line-up table.
Sheet No.: OP18005EN
3
PC851XNNSZ1H Series
Absolute Maximum Ratings
Parameter
Symbol
Forward current
I
F
*1
Peak forward current
I
FM
Reverse voltage
V
R
Power dissipation
P
Collector-emittervoltage V
CEO
Emitter-collectorvoltage V
ECO
Collector current
I
C
Collector power dissipation
P
C
Total power dissipation
P
tot
*2
Isolation voltage
V
iso (rms)
Operating temperature
T
opr
Storage temperature
T
stg
*3
Soldering temperature
T
sol
(T
a
½25˚C)
Rating
Unit
50
mA
1
A
6
V
70
mW
350
V
6
V
50
mA
150
mW
200
mW
5
kV
25
to
100
˚C
to
125
˚C
270
˚C
Electro-optical Characteristics
Parameter
Forward voltage
Reverse Current
Terminal capacitance
Dark current
Collector-emitter breakdown voltage
Emitter-collector breakdown voltage
Collector current
Collector-emitter saturation voltage
Isolation resistance
Floating capacitance
Cut-off frequency
Risetime
Response
Falltime
time
Symbol
V
F
I
R
C
t
I
CEO
BV
CEO
BV
ECO
I
C
V
CE (sat)
R
ISO
C
f
f
C
t
r
t
f
Conditions
Output
Input
*1 Pulse width100s, Duty ratio : 0.001
*2 40 to 60%RH, AC for 1 minute
*3 For 10s
Input
Output
Transfer
charac-
teristics
I
F
½20mA
V
R
½4V
V½0, f½1kHz
V
CE
½200V,
I
F
½0
I
C
½0.1mA,
I
F
½0
I
E
½10A,
I
F
½0
I
F
½5mA,
V
CE
½5V
I
F
½20mA,
I
C
½1mA
DC500V, 40 to 60%RH
V½0, f½1MHz
V
CE
½5V,
I
C
½2mA,
R
L
½100, 3dB
V
CE
½2V,
I
C
½2mA,
R
L
½100
MIN.
350
6
2.0
510
10
TYP.
1.2
30
4.0
0.1
110
11
0.6
50
4
5
(T
a
½25˚C)
MAX. Unit
1.4
V
10
A
250
pF
1
A
V
V
mA
0.3
V
1.0
pF
kHz
10
s
12
s
Sheet No.: OP18005EN
4