Moved Ordering Guide .................................................................. 18
4/12—Rev. E to Rev. F
Changes to Ordering Guide .......................................................... 17
11/10—Rev. D to Rev. E
Changes to Ordering Guide .......................................................... 17
5/10—Rev. C to Rev. D
Changes to Figure 1 .......................................................................... 1
Changes to Ordering Guide .......................................................... 17
1/10—Rev. B to Rev. C
Changes to Figure 24...................................................................... 10
10/09—Rev. A to Rev. B
Changes to Features Section ............................................................1
Changes to Table 3 and Table 4........................................................5
Changes to Figure 4, Figure 6, Figure 7, and Figure 9 ..................7
Changes to Figure 10 and Figure 12 ...............................................8
Changes to Figure 17.........................................................................9
Changes to Figure 25...................................................................... 10
Changes to Enable Feature Section and Figure 32 ..................... 13
Changes to Current-Limit and Thermal Overland Protection
Section and Thermal Considerations Section ............................ 14
Changes to Ordering Guide .......................................................... 17
3/09—Rev. 0 to Rev. A
Changes to Figure 15.........................................................................8
Changes to Figure 16.........................................................................9
Changes to Ordering Guide .......................................................... 17
10/08—Revision 0: Initial Version
Rev. H | Page 2 of 20
Data Sheet
SPECIFICATIONS
ADP220/ADP221
V
IN
= (V
OUT
+ 0.5 V) or 2.5 V (whichever is greater), EN1 = EN2 = V
IN
, I
OUT1
= I
OUT2
= 10 mA, C
IN
= C
OUT1
= C
OUT2
= 1 µF, T
A
= 25°C,
unless otherwise noted.
Table 1.
Parameter
INPUT VOLTAGE RANGE
OPERATING SUPPLY CURRENT WITH
BOTH REGULATORS ON
Symbol
V
IN
I
GND
Conditions
T
J
= −40°C to +125°C
I
OUT
= 0 µA
I
OUT
= 0 µA, T
J
= −40°C to +125°C
I
OUT
= 10 mA
I
OUT
= 10 mA, T
J
= −40°C to +125°C
I
OUT
= 200 mA
I
OUT
= 200 mA, T
J
= −40°C to +125°C
EN1= EN2 = GND
EN1= EN2 = GND, T
J
= −40°C to +125°C
100 µA < I
OUT
< 200 mA, V
IN
= (V
OUT
+ 0.5 V) to
5.5 V, T
J
= −40°C to +125°C
V
IN
= (V
OUT
+ 0.5 V) to 5.5 V
V
IN
= (V
OUT
+ 0.5 V) to 5.5 V, T
J
= −40°C to +125°C
I
OUT
= 1 mA to 200 mA
I
OUT
= 1 mA to 200 mA, T
J
= −40°C to +125°C
V
OUT
= 3.3 V
I
OUT
= 10 mA
I
OUT
= 10 mA, T
J
= −40°C to +125°C
I
OUT
= 200 mA
I
OUT
= 200 mA, T
J
= −40°C to +125°C
V
OUT
= 3.3 V, both initially off, enable one
V
OUT
= 0.8 V, both initially off, enable one
V
OUT
= 3.3 V, one initially on, enable second
V
OUT
= 0.8 V, one initially on, enable second
V
OUT
= 2.8 V, R
LOAD
= ∞, C
OUT
= 1 μF, ADP221 only
−1
−2
0.01
−0.03
0.001
0.003
7.5
12
150
230
240
100
180
20
80
300
155
15
1.2
0.4
0.1
1
2.45
2.35
100
56
50
45
27
+0.03
Min
2.5
Typ
60
120
70
140
120
220
0.1
2
+1
+2
Max
5.5
Unit
V
µA
µA
µA
µA
µA
µA
µA
µA
%
%
%/V
%/V
%/mA
%/mA
mV
mV
mV
mV
mV
µs
µs
µs
µs
Ω
mA
°C
°C
V
V
µA
µA
V
V
mV
µV rms
µV rms
µV rms
µV rms
SHUTDOWN CURRENT
FIXED OUTPUT VOLTAGE ACCURACY
I
GND-SD
V
OUT
LINE REGULATION
LOAD REGULATION
1
∆V
OUT
/∆V
IN
∆V
OUT
/∆I
OUT
V
DROPOUT
DROPOUT VOLTAGE
2
START-UP TIME
3
t
START-UP
ACTIVE PULL-DOWN RESISTANCE
CURRENT-LIMIT THRESHOLD
4
THERMAL SHUTDOWN
Thermal Shutdown Threshold
Thermal Shutdown Hysteresis
EN INPUT
EN Input Logic High
EN Input Logic Low
EN Input Leakage Current
UNDERVOLTAGE LOCKOUT
Input Voltage Rising
Input Voltage Falling
Hysteresis
OUTPUT NOISE
t
SHUTDOWN
I
LIMIT
TS
SD
TS
SD-HYS
V
IH
V
IL
V
I-LEAKAGE
UVLO
UVLO
RISE
UVLO
FALL
UVLO
HYS
OUT
NOISE
240
T
J
rising
440
2.5 V ≤ V
IN
≤ 5.5 V
2.5 V ≤ V
IN
≤ 5.5 V
EN1 = EN2 = V
IN
or GND
EN1 = EN2 = V
IN
or GND, T
J
= −40°C to +125°C
2.2
10 Hz to 100 kHz, V
IN
= 5 V, V
OUT
= 3.3 V
10 Hz to 100 kHz, V
IN
= 5 V, V
OUT
= 2.8 V
10 Hz to 100 kHz, V
IN
= 3.6 V, V
OUT
= 2.5 V
10 Hz to 100 kHz, V
IN
= 3.6 V, V
OUT
= 1.2 V
Rev. H | Page 3 of 20
ADP220/ADP221
Parameter
POWER SUPPLY REJECTION RATIO
Symbol
PSRR
Conditions
V
IN
= 2.5 V, V
OUT
= 0.8 V, I
OUT
= 100 mA
100 Hz
1 kHz
10 kHz
100 kHz
1 MHz
V
IN
= 3.8 V, V
OUT
= 2.8 V, I
OUT
= 100 mA
100 Hz
1 kHz
10 kHz
100 kHz
1 MHz
Min
Typ
76
76
70
60
40
68
68
68
60
40
Data Sheet
Max
Unit
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
Based on an end-point calculation using 1 mA and 200 mA loads.
Dropout voltage is defined as the input-to-output voltage differential when the input voltage is set to the nominal output voltage. This applies only for output
voltages above 2.5 V.
3
Start-up time is defined as the time between the rising edge of ENx to V
OUTx
being at 90% of its nominal value.
4
Current-limit threshold is defined as the current at which the output voltage drops to 90% of the specified typical value. For example, the current limit for a 3.0 V
output voltage is defined as the current that causes the output voltage to drop to 90% of 3.0 V, or 2.7 V.
1
2
INPUT AND OUTPUT CAPACITOR, RECOMMENDED SPECIFICATIONS
Table 2.
Parameter
MINIMUM INPUT AND OUTPUT CAPACITANCE
1
CAPACITOR ESR
1
Symbol
C
MIN
R
ESR
Conditions
T
A
= −40°C to +125°C
T
A
= −40°C to +125°C
Min
0.70
0.001
Typ
Max
1
Unit
µF
Ω
The minimum input and output capacitance should be greater than 0.70 µF over the full range of operating conditions. The full range of operating conditions in the
application must be considered during device selection to ensure that the minimum capacitance specification is met. X7R and X5R type capacitors are recommended;
Y5V and Z5U capacitors are not recommended for use with LDOs.
Rev. H | Page 4 of 20
Data Sheet
ABSOLUTE MAXIMUM RATINGS
Table 3.
Parameter
VIN to GND
VOUT1, VOUT2 to GND
EN1, EN2 to GND
Storage Temperature Range
Operating Junction Temperature Range
Soldering Conditions
Rating
–0.3 V to +6.5 V
–0.3 V to VIN
–0.3 V to +6.5 V
–65°C to +150°C
–40°C to +125°C
JEDEC J-STD-020
ADP220/ADP221
Junction-to-ambient thermal resistance (θ
JA
) of the package is
based on modeling and calculation using a 4-layer board. The
junction-to-ambient thermal resistance is highly dependent
on the application and board layout. In applications where high
maximum power dissipation exists, close attention to thermal
board design is required. The value of θ
JA
may vary, depending
on PCB material, layout, and environmental conditions. The
specified values of θ
JA
are based on a four-layer, 4 inch × 3 inch,
circuit board. Refer to JEDEC JESD 51-9 for detailed informa-
tion on the board construction. For additional information,
see the AN-617 Application Note,
MicroCSP
TM
Wafer Level Chip
Scale Package.
Ψ
JB
is the junction-to-board thermal characterization parameter
with units of °C/W. Ψ
JB
of the package is based on modeling and
calculation using a 4-layer board. The JESD51-12,
Guidelines
for Reporting and Using Package Thermal Information,
states
that thermal characterization parameters are not the same as
thermal resistances. Ψ
JB
measures the component power flowing
through multiple thermal paths rather than a single path as in
thermal resistance, θ
JB
. Therefore, Ψ
JB
thermal paths include
convection from the top of the package as well as radiation
from the package. Factors that make Ψ
JB
more useful in real-
world applications. Maximum junction temperature (T
J
) is
calculated from the board temperature (T
B
) and power
dissipation (P
D
) using the following formula:
T
J
=
T
B
+ (P
D
× Ψ
JB
)
Refer to JEDEC JESD51-8 and JESD51-12 for more detailed
information on Ψ
JB
.
Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any
other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability.
THERMAL DATA
Absolute maximum ratings apply individually only, not in
combination.
The ADP220/ADP221 can be damaged when the junction
temperature limits are exceeded. Monitoring ambient temper-
ature does not guarantee that the junction temperature (T
J
)
is within the specified temperature limits. In applications
with high power dissipation and poor thermal resistance, the
maximum ambient temperature may have to be derated. In
applications with moderate power dissipation and low PCB
thermal resistance, the maximum ambient temperature can
exceed the maximum limit as long as the junction temperature
is within specification limits. The junction temperature (T
J
) of
the device is dependent on the ambient temperature (T
A
), the
power dissipation of the device (P
D
), and the junction-to-ambient
thermal resistance of the package (θ
JA
). Maximum junction
temperature (T
J
) is calculated from the ambient temperature
(T
A
) and power dissipation (P
D
) using the following formula:
T
J
=
T
A
+ (P
D
×
θ
JA
)
THERMAL RESISTANCE
θ
JA
and Ψ
JB
are specified for the worst-case conditions, that is, a
device soldered in a circuit board for surface-mount packages.
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