MCC
TM
Micro Commercial Components
20736 Marilla Street Chatsworth
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$
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TSMBJ0306C
THRU
TSMBJ0324C
Transient Voltage
Protection Device
75 to 320 Volts
•
•
•
•
•
Oxide-Glass passivated Junction
Bi-Directional protection in a single device
Surge capabilities up to 50A@10/1000us or 150A@8/20us
High Off-State impedance and Low On-State voltage
Plastic material has UL flammability classification 94V -0
•
•
•
Case : Molded plastic
Polarity : None cathode band denotes
Approx Weight : 0.093grams
Characteristic
Non-repetitive peak
impulse current
Non-repetitive peak
On-state current
Operating temperature
range
Junction and storage
temperature range
Symbol
I
PP
I
TSM
T
OP
T
J
, T
STG
Value
50A
20A
-40~125
o
C
-55~150
o
C
Unit
10/1000us
8.3ms, one-half
cycle
Characteristic
Thermal Resistance
junction to lead
Thermal Resistance
junction to ambient
Typical positive
temperature
coefficient for
breakdown voltage
Symbol
R
q
JL
R
q
JA
Value
30
o
C/W
120
o
C/W
Unit
On recommended
pad layout
V
BR
/ T
J
0.1%/
o
C
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TSMBJ0306C thru TSMBJ0324C
ELECTRICAL CHARACTERISTIC
@25
Parameter
Unless otherwise specified
MCC
TM
Micro Commercial Components
On-State
Rated
Off-state
Breakover
Voltage Breakover Current
Repetitive Off-
Leakage
Voltage
@I
T
=1.0A
state Voltage Current@V
DRM
Holding Current
Off-State
Capacitance
MAXIMUM RATED SURGE WAVEFORM
Waveform
Standard
Ipp (A)
2/10 us
8/20 us
10/160 us
10/700 us
10/560 us
10/1000 us
GR-1089-CORE
IEC 61000-4-5
FCC Part 68
ITU-T K20/21
FCC Part 68
GR-1089-CORE
200
150
100
60
60
50
Ipp ; PEAK PULSE CURRENT (%)
100
Peak value (Ipp)
tr = rise time to peak value
tp = decay time to half value
50
Half value
0
tr
tp
TIME
Symbol
V
DRM
I
DRM
V
BR
I
BR
V
BO
I
BO
I
H
V
T
I
PP
C
O
NOTE
Parameter
Stand-off voltage
Leakage current at stand-off voltage
Breakdown voltage
Breakdown current
Breakover voltage
Breakover current
Holding current
On state voltage
Peak pulse current
Off-state capacitance
NOTE: 2
NOTE: 1
I
BR
I
BO
I
H
I
DRM
I
PP
I
V
T
V
BR
V
DRM
V
BO
V
1. I H > ( V L/ R L
)
If this criterion is not obeyed, the TSPD triggers but does not return correctly to high-resistance state.
The surge recovery time. It does not exceed 30ms.
2. Off-state capacitance measured at f=1.0MHz , 1.0Vrms signal , VR=2Vdc bias.
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MCC
TSMBJ0306C thru TSMBJ0324C
Fig.1 - Off-State Current v.s Junction Temperature
100
1.2
TM
Micro Commercial Components
Fig.2 - Relative Variation of
Breakdown Voltage v.s Junction Temperature
I(DRM) , OFF-STATE CURRENT(uA)
10
NORMALISED BREAKDOWN VOLTAGE
V
BR
(T
J
)
1.15
V
BR
(T
J
=25 )
1
1.1
V
DRM
= 50V
0.1
1.05
1
0.01
0.95
0.001
-25
0
25
50
75
100
125
150
0.9
-50
-25
0
25
50
75
100
125
150
175
Tj , JUNCTION TEMPERATURE ( )
Tj ; JUNCTION TEMPERATURE ( )
Fig.3 - Relative Variation of
Breakover Voltage v.s Junction Temperature
100
1.1
Fig.4 - On-State Current v.s On-State Voltage
NORMALISED BREAKOVER VOLTAGE
V
BO
(T
J
)
1.05
V
BO
(T
J
=25 )
I(T) ; ON-STATE CURRENT (A)
10
1
T
J
= 25
0.95
-50
-25
0
25
50
75
100
125
150
175
1
1
2
3
4
5
6
7
8
9
Tj ; JUNCTION TEMPERATURE ( )
V(T) ; ON-STATE VOLTAGE
Fig.5 - Relative Variation of
Holding Current v.s Junction Temperature
2
1
Fig.6 - Relative Variation of
Junction Capacitance v.s Reverse Voltage Bias
NORMALISED HOLDING CURRENT
1.5
1
NORMALISED CAPACITANCE
C
O
(VR)
C
O
(VR = 1V)
Tj =25
f=1MHz
V
RMS
= 1V
0.5
I
H
(T
J
)
I
H
(T
J
=25 )
0
-50
-25
0
25
50
75
100
125
0.1
1
10
100
Tj ; JUNCTION TEMPERATURE ( )
VR ; REVERSE VOLTAGE (V)
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MCC
TSMBJ0306C thru TSMBJ0324C
TYPICAL APPLICATION CIRCUITS
TM
Micro Commercial Components
FUSE
RING
TELECOM
EQUIPMENT
E.G. MODEM
TIP
TVPD 1
RING
PTC
TVPD 1
TELECOM
EQUIPMENT
E.G. ISDN
TVPD 2
TIP
PTC
RING
PTC
TVPD 2
TVPD 1
TVPD 3
TELECOM
EQUIPMENT
E.G. LINE CARD
TIP
PTC
The PTC (Positive Temperature Coefficient) is an overcurrent protection device.
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mccsemi
.
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MCC
TM
Micro Commercial Components
MCC
03XXC
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.
mccsemi
.
com
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