MCC
TM
Micro Commercial Components
ELECTRICAL CHARACTERISTIC
@25
Parameter
Unless otherwise specified
On-State
Rated
Off-state
Breakover
Voltage Breakover Current
Repetitive Off
Leakage
Voltage
@I
T
=1.0A
state Voltage Curr ent@V
DRM
Holding Current
Off-State
Capacitance
MAXIMUM RATED SURGE WAVEFORM
Waveform
Standard
Ipp (A)
2/10 us
8/20 us
10/160 us
10/700 us
10/560 us
10/1000 us
GR-1089-CORE
IEC 61000-4-5
FCC Part 68
ITU-T K20/21
FCC Part 68
GR-1089-CORE
250
250
150
100
100
80
Ipp ; PEAK PULSE CURRENT (%)
100
Peak value (Ipp)
tr = rise time to peak value
tp = decay time to half value
50
Half value
0
tr
tp
TIME
Symbol
V
DRM
I
DRM
V
BR
I
BR
V
BO
I
BO
I
H
V
T
I
PP
C
O
NOTE
Parameter
Stand-off voltage
Leakage current at stand-off voltage
Breakdown voltage
Breakdown current
Breakover voltage
Breakover current
Holding current
On state voltage
Peak pulse current
Off-state capacitance
NOTE: 2
NOTE: 1
I
BR
I
BO
I
H
I
DRM
I
PP
I
V
T
V
BR
V
DRM
V
BO
V
1. I H > ( V L/ R L
)
If this criterion is not obeyed, the TSPD triggers but does not return correctly to high-resistance state.
The surge recovery time. It does not exceed 30ms.
2. Off-state capacitance measured at f=1.0MHz , 1.0Vrms signal , VR=2Vdc bias.
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MCC
T
100
1.2
0 0
Fig.1 - Off-State Current v.s Junction Temperature
TM
Micro Commercial Components
Fig.2 - Relative Variation of
Breakdown Voltage v.s Junction Temperature
I(DRM) , OFF-STATE CURRENT(uA)
10
NORMALISED BREAKDOWN VOLTAGE
V
BR
(T
J
)
1.15
V
BR
(T
J
=25 )
1
1.1
V
DRM
= 50V
0.1
1.05
1
0.01
0.95
0.001
-25
0
25
50
75
100
125
150
0.9
-50
-25
0
25
50
75
100
125
150
175
Tj , JUNCTION TEMPERATURE ( )
Tj ; JUNCTION TEMPERATURE ( )
Fig.3 - Relative Variation of
Breakover Voltage v.s Junction Temperature
100
1.1
Fig.4 - On-State Current v.s On-State Voltage
NORMALISED BREAKOVER VOLTAGE
V
BO
(T
J
)
1.05
V
BO
(T
J
=25 )
I(T) ; ON-STATE CURRENT (A)
10
1
T
J
= 25
0.95
-50
-25
0
25
50
75
100
125
150
175
1
1
10
Tj ; JUNCTION TEMPERATURE ( )
V(T) ; ON-STATE VOLTAGE
Fig.5 - Relative Variation of
Holding Current v.s Junction Temperature
1.6
1
Fig.6 - Relative Variation of
Junction Capacitance v.s Reverse Voltage Bias
NORMALISED HOLDING CURRENT
1.4
1.2
1
NORMALISED CAPACITANCE
0.8
C
O
(VR)
C
O
(VR = 1V)
Tj =25
f=1MHz
V
RMS
= 1V
0.6
I
H
(T
J
)
I
H
(T
J
=25 )
0.4
0.2
-50
-25
0
25
50
75
100
125
0.1
1
10
100
Tj ; JUNCTION TEMPERATURE ( )
VR ; REVERSE VOLTAGE (V)
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.
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T
0 0
MCC
TM
Micro Commercial Components
TYPICAL APPLICATION CIRCUITS
FUSE
RING
TELECOM
EQUIPMENT
E.G. MODEM
TIP
TVPD 1
RING
PTC
TVPD 1
TELECOM
EQUIPMENT
E.G. ISDN
TVPD 2
TIP
PTC
RING
PTC
TVPD 2
TVPD 1
TVPD 3
TELECOM
EQUIPMENT
E.G. LINE CARD
TIP
PTC
The PTC (Positive Temperature Coefficient) is an overcurrent protection device.
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.
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.
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