I27120 rev. D 02/03
50MT060WH
"HALF-BRIDGE" IGBT MTP
Warp Speed IGBT
Features
• Gen. 4 Warp Speed IGBT Technology
• HEXFRED
TM
Antiparallel Diodes with
UltraSoft Reverse Recovery
• Very Low Conduction and Switching Losses
• Optional SMT Thermistor (NTC)
• Aluminum Nitride DBC
• Very Low Stray Inductance Design for
High Speed Operation
•
UL E78996 approved
V
CES
= 600V
V
CE(on) typ.
= 2.3V @
V
GE
= 15V, I
C
= 50A
T
C
= 25°C
Benefits
• Optimized for Welding, UPS and SMPS
Applications
• Operating Frequencies > 20 kHz Hard
Switching,>200 kHz Resonant Mode
• Low EMI, requires Less Snubbing
• Direct Mounting to Heatsink
• PCB Solderable Terminals
• Very Low Junction-to-Case Thermal
Resistance
MMTP
Absolute Maximum Ratings
Parameters
V
CES
I
C
I
CM
I
LM
I
F
Max
600
@ T
C
= 25°C
@ T
C
= 109°C
114
50
350
350
@ T
C
= 109°C
34
200
± 20
2500
658
263
@ T
C
= 25°C
@ T
C
= 100°C
Units
V
A
Collector-to-Emitter Voltage
Continuos Collector Current
Pulsed Collector Current
Peak Switching Current
Diode Continuous Forward Current
Peak Diode Forward Current
Gate-to-Emitter Voltage
RMS Isolation Voltage, Any Terminal to Case, t = 1 min
Maximum Power Dissipation
I
FM
V
GE
V
ISOL
P
D
V
W
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1
50MT060WH
I27120 rev. D 02/03
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameters
V
(BR)CES
V
CE(on)
Collector-to-Emitter Breakdown Voltage
Collector-to-Emitter Voltage
Min Typ Max Units Test Conditions
600
3.15
3.2
2.17
6
0.4
10
1.58 1.80
1.49 1.68
1.9 2.17
± 250
2.3
2.5
1.72
V
V
GE
V
GE
V
GE
V
GE
I
C
=
V
GE
V
GE
I
F
=
I
F
=
I
F
=
V
GE
= 0V, I
C
= 500µA
= 15V, I
C
= 50A
= 15V, I
C
= 100A
= 15V, I
C
= 50A, T
J
= 150°C
0.5mA
= 0V, V
CE
= 600V
= 0V, V
CE
= 600V, T
J
= 150°C
50A, V
GE
= 0V
50A, V
GE
= 0V, T
J
= 150°C
100A, V
GE
= 0V, T
J
= 25°C
= ± 20V
V
GE(th)
I
CES
V
FM
Gate Threshold Voltage
Collector-to-Emiter Leaking
Current
Diode Forward Voltage Drop
3
mA
V
I
GES
Gate-to-Emitter Leakage Current
nA
Switching Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameters
Q
g
Q
ge
Q
gc
E
on
E
off
E
ts
E
on
E
off
E
ts
C
ies
C
oes
C
res
trr
Irr
Qrr
trr
Irr
Qrr
Total Gate Charge (turn-on)
Gate-Emitter Charge (turn-on)
Gate-Collector Charge (turn-on)
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Diode Reverse Recovery Time
Diode Peak Reverse Current
Diode Recovery Charge
Diode Reverse Recovery Time
Diode Peak Reverse Current
Diode Recovery Charge
Min Typ
331
44
133
0.26
1.2
1.46
0.73
1.66
2.39
7100
510
140
82
8.3
340
137
12.7
870
Max Units Test Conditions
385
52
176
nC
I
C
= 52A
V
CC
= 400V
V
GE
= 15V
Internal gate resistors
(
see Electrical Diagram
)
I
C
= 50A, V
CC
= 480V, V
GE
= 15V, L = 200µH
Energy losses include tail and diode reverse
recovery
mJ
mJ
Internal gate resistors
(
see Electrical diagram
)
I
C
= 50A, V
CC
= 480V, V
GE
= 15V, L = 200µH
Energy losses include tail and diode reverse
recovery,
T
J
= 150°C
pF
97
10.6
514
153
14.8
1132
ns
A
nC
ns
A
nC
V
GE
= 0V
V
CC
= 30V
f = 1.0 MHz
V
CC
= 200V, I
C
= 50A
di/dt = 200A/µs
V
CC
= 200V, I
C
= 50A
di/dt = 200A/µs
T
J
= 125°C
Thermistor Specifications
Parameters
R
0
(1)
β
(1)
(1) (2)
Min Typ
30
4000
R
0
R
1
Max Units Test Conditions
kΩ
K
T
0
= 25°C
T
0
= 25°C
T
1
= 85°C
Resistance
Sensitivity index of the thermistor
material
(2)
T
0
,T
1
are thermistor's temperatures
= exp
[
β
(
1
T
0
1
T
1
)]
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2
50MT060WH
I27120 rev. D 02/03
Thermal- Mechanical Specifications
Parameters
T
J
T
STG
R
thJC
R
thCS
Operating Junction
Temperature Range
Storage Temperature Range
Junction-to-Case
Case-to-Sink
IGBT, Diode
Thermistor
IGBT
Diode
Module
5.5
8
3 ± 10%
66
Nm
g
0.06
mm
Min
- 40
- 40
- 40
Typ
Max
150
125
125
0.38
0.8
Units
°C
°C/ W
(Heatsink Compound Thermal Conductivity = 1 W/mK)
Clearance
(3)
(
external shortest distance in air
between two terminals)
Creepage
(3)
(
shortest distance along the external
surface of the insulating material between 2 terminals
)
T
Wt
Mounting torque to heatsink
Weight
(4)
(3) Standard version only i.e. without optional thermistor
(4) A mounting compound is recommended and the torque should be checked after 3 hours to allow for the spread of the
compound. Lubricated threads
100
Maximum DC Collector Current (A)
I
C
, Collector-to-Emitter Current (A)
120
Vge = 15V
20µs Pulse Width
100
80
60
40
20
0
25
10
TJ = 150˚C
T J = 25˚C
1
0.1
1
V
CE
, Collector-to-Emitter Voltage (V)
Fig. 1 - Typical Output Characteristics
10
50
75
100
125
150
T
C
, Case Temperature (°C)
Fig. 2 - Maximum Collector Current vs. Case
Temperature
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3
50MT060WH
I27120 rev. D 02/03
3
V
CE
, Collector-to-Emitter Voltage (V)
V
GE
, Gate-to-Emitter Voltage (V)
20
16
12
8
4
0
Vcc = 400V
Ic = 52A
2.5
I C = 100A
I C = 50A
2
1.5
I C= 20A
1
20
40
60
80
100 120 140 160
0
100
200
300
400
T
J
, Junction Temperature (°C)
Fig. 3 - Typical Collector-to-Emitter Voltage vs.
Junction Temperature
Q
G
, Total Gate Charge (nC)
Fig. 4 - Typical Gate Charge vs. Gate-to-
Emitter Voltage
100
Instantaneous Forward Current - I
F
(A)
10
TJ = 150˚C
TJ = 125˚C
TJ = 25˚C
1
0.4
0.8
1.2
1.6
2
2.4
Forward Voltage Drop - V
FM
(V)
Fig. 5 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current
4
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50MT060WH
I27120 rev. D 02/03
160
Vr = 200V
100
Vr = 200V
140
I F = 50A, Tj = 125˚C
I F = 50A, Tj = 125˚C
I
RRM
(A)
120
t
rr
(ns)
10
I F = 50A, Tj = 25˚C
100
I F = 50A, Tj = 25˚C
80
60
100
di
f
/dt - (A/µs)
1000
1
100
di
f
/dt - (A/µs)
1000
Fig. 6 - Typical Reverse Recovery vs. di
f
/dt
Fig. 7 - Typical Reverse Recovery Current vs. di
f
/dt
2000
Vr = 200V
1500
I F = 50A, Tj = 125˚C
(nC)
Q
RR
1000
500
I = 50A, Tj = 25˚C
F
0
100
di
f
/dt - (A/µs)
1000
Fig. 8 - Typical Stored Charge vs. di
f
/dt
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