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MA27D2700L

Description
DIODE SCHOTTKY 20V 100MA
Categorysemiconductor    Discrete semiconductor   
File Size228KB,3 Pages
ManufacturerPanasonic
Websitehttp://www.panasonic.co.jp/semicon/e-index.html
Environmental Compliance
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MA27D2700L Overview

DIODE SCHOTTKY 20V 100MA

MA27D2700L Parametric

Parameter NameAttribute value
Diode typeSchottky
Voltage - DC Reverse (Vr) (Maximum)20V
Current - average rectification (Io)100mA
Voltage at different If - Forward (Vf580mV @ 100mA
speedSmall signal =< 200mA (Io), any speed
Reverse recovery time (trr)1ns
Current at different Vr - Reverse leakage current300nA @ 10V
Capacitance at different Vr, F11pF @ 0V,1MHz
Installation typesurface mount
Package/casing2-SMD, flat leads
Supplier device packagingSSS Mini 2-F2
Operating Temperature - Junction150°C (maximum)
This product complies with the RoHS Directive (EU 2002/95/EC).
Schottky Barrier Diodes (SBD)
MA27D27
Silicon epitaxial planar type
For super high speed switching
0.60
±0.05
Unit: mm
0.20
±0.05
0.12
+0.05
–0.02
M
ain
Di
sc te
on na
tin nc
ue e/
d
Small reverse current I
R
Optimum for high frequency rectification because of its short
reverse recovery time t
rr
SSS-Mini type 2-pin package
1.00
±0.05
1.40
±0.05
2
Features
1
Absolute Maximum Ratings
T
a
=
25°C
Parameter
Symbol
V
R
Reverse voltage
Forward current (Average)
Peak forward current
I
F(AV)
I
FM
I
FSM
T
j
100
200
1
mA
mA
A
0 to 0.01
Repetitive peak reverse voltage
V
RRM
Non-repetitive peak forward
surge current
*
Junction temperature
Storage temperature
T
stg
−55
to
+150
Note) *: The peak-to-peak value in one cycle of 50 Hz sine wave (non-repetitive)
Electrical Characteristics
T
a
=
25°C
±
3°C
Parameter
Symbol
V
F1
V
F2
I
R
t
rr
C
t
tin
Forward voltage
isc
Reverse current
Terminal capacitance
Reverse recovery time
*
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body
and the leakage of current from the operating equipment.
3. Rated input/output frequency: 250 MHz
4. * : t
rr
measurement circuit
Bias Application Unit (N-50BU)
t
r
10%
Pulse Generator
(PG-10N)
R
s
=
50
A
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d d te te ow
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ct
e
life
an ut
d
as lat
cy
on es
cle
ic. t in
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ge
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.
/en at
/ ion
.
0.27
+0.05
–0.02
20
20
V
V
1: Anode
2: Cathode
SSSMini2-F2 Package
150
°C
Marking Symbol: 8L
°C
Conditions
Min
Typ
Max
0.44
ue
I
F
=
10 mA
V
R
=
10 V
0.38
on
I
F
=
100 mA
0.54
0.58
0.3
/D
V
R
=
0 V, f
=
1 MHz
11
1
ce
Ma
int
en
I
F
=
I
R
=
100 mA
I
rr
=
10 mA, R
L
=
100
an
Input Pulse
t
p
t
I
F
Output Pulse
t
rr
t
I
rr
=
10mA
I
F
=
I
R
=
100 mA
R
L
=
100
Wave Form
Analyzer
(SAS-8130) V
R
R
i
=
50
90%
t
p
=
2
µs
t
r
=
0.35 ns
δ =
0.05
0.15 max.
0.52
±0.03
Rating
Unit
0.20
±0.05
Unit
V
µA
pF
ns
Publication date: March 2003
SKH00122AED
1

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Description DIODE SCHOTTKY 20V 100MA Rectifier Diode, Schottky, 1 Element, 0.1A, 20V V(RRM), Silicon, ROHS COMPLIANT, SSSMINI2-F3, 2 PIN
Diode type Schottky RECTIFIER DIODE

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