[CQ-209A]
CQ-209A
High-Speed Small-Sized Current Sensor
Overview
CQ-209A is an open-type current sensor using a Hall sensor which outputs the analog voltage proportional
to the AC/DC current. Quantum well ultra-thin film InAs (Indium Arsenide) is used as the Hall sensor, which
enables the high-accuracy and high-speed current sensing. Simple AI-Shell package with the Hall sensor,
magnetic core, and primary conductor realizes the space-saving and high reliability.
Features
- Bidirectional type
- Electrical isolation between the primary conductor and the sensor signal
- 5V single supply operation
- Ratiometric output
- Low variation and low temperature drift of sensitivity and offset voltage
- Low noise output: 2.1mVrms (max.)
- Fast response time: 1μs (typ.)
- Small-sized surface mount package, halogen free
Functional Block Diagram
P
Magnetic
Core
Amplifier
Buffer
VOUT
Hall
Sensor
Compensation
VSS
Bias Unit
EEPROM Unit
VDD
N
DATA_IO
SCLK
Figure 1. Functional block diagram of CQ-209A
MS1265-E-05
-1-
2013/06
[CQ-209A]
Circuit Blocks
Table 1. Explanation of circuit blocks
Circuit Block
Hall Sensor
Amplifier
Buffer
Compensation
Bias Unit
EEPROM Unit
Magnetic Core
Function
Hall element which detects magnetic flux density generated from the measured current.
Amplifier of Hall element’s output.
Output buffer with gain. This block outputs the voltage (V
OUT
) proportional to the current
applied to the primary conductor.
Compensation circuit which adjusts the temperature drifts of sensitivity and offset voltage.
Drive circuit for Hall element.
Non-volatile memory for setting adjustment parameters. The parameters are adjusted before
the shipment.
Magnetic core which gathers the magnetic flux density to the Hall element.
Typical Output Characteristics
V
OUT
V
DD
N
←
P
CQ-209A
(Top View)
←
I
IN
1/2 V
DD
V
DD
V
OUT
−
I
NS
N→P
0
P→N
I
NS
I
IN
Figure 2. Typical output characteristics of CQ-209A
Pin/Function
Table 2. Pin-out description
No.
1
2
3
4
5
6
7
Name
DATA_IO
VDD
VSS
VOUT
SCLK
P
N
I/O
-
-
-
O
-
I
I
Description
Test pin (connect to ground)
Power supply pin (5V)
Ground pin (0V)
Analog output pin
Test pin (connect to ground)
Primary current pin (+)
Primary current pin (−)
7
6
CQ-209A
(Top View)
1
2
3 4 5
Figure 3. Pin-out diagram
MS1265-E-05
-2-
2013/06
[CQ-209A]
Absolute Maximum Ratings
Table 3. Absolute maximum ratings
Parameter
Supply Voltage
Analog Output Current
Storage Temperature
Symbol
V
DD
I
OUT
T
stg
Min.
−0.3
−1
−40
Max.
6
1
125
Units
V
mA
C
Notes
VDD
VOUT
WARNING: Operation at or beyond these limits may result in permanent damage to the device. Normal
operation is not guaranteed at these extremes.
Primary Current Derating Curve
Conditions: Mounted on the test board complying with the EIA/JEDEC Standards (EIA/JESD 51.)
25
20
I
RMSmax
[A]
15
10
5
0
-60
-40
-20
0
20
T
a
[℃]
40
60
80
100
Figure 4. Primary current derating curve of CQ-209A
Recommended Operating Conditions
Table 4. Recommended operating conditions
Parameter
Supply Voltage
Output Current
Output Load
Capacitance
Operating Ambient
Temperature
Symbol
V
DD
I
OUT
C
L
T
a
−40
Min.
4.5
−0.5
Typ.
5.0
Max.
5.5
0.5
100
90
Units
V
mA
pF
C
Notes
VOUT
VOUT
NOTE: Electrical characteristics are not guaranteed when operated at or beyond these conditions.
MS1265-E-05
-3-
2013/06
[CQ-209A]
Electrical Characteristics
Table 5. Electrical characteristics
Conditions (unless otherwise specified): T
a
=25C，V
DD
=5V
Parameter
Maximum Primary Current
(RMS)
Current Consumption
Sensitivity*
Offset Voltage*
Linear Sensing Range
Linearity Error*
Rise Response Time
Fall Response Time
Bandwidth
Output Noise**
Maximum Temperature Drift
of Sensitivity
Maximum Temperature Drift
of Offset voltage
Ratiometricity Error of
Sensitivity**
Ratiometricity Error of Offset
Voltage**
Primary Conductor
Resistance
Isolation Voltage**
Isolation Resistance**
Symbol
I
RMSmax
I
DD
V
h
V
of
I
NS
ρ
t
r
t
f
f
T
V
Nrms
Variation ratio to V
h
(T
a
=35
C)
T
a
=35~90C
Variation ratio to V
h
(T
a
=35
C)
T
a
=−40~35C
Variation from V
of
(T
a
=35
C)
T
a
=−40~90C, I
IN
=0A
V
DD
=4.5V~5.5V
V
DD
=4.5V~5.5V
I
IN
=0A
−1
−1
340
AC 50/60Hz, 60s
DC 1kV
2.5
500
±1
%
±2
±22
1
1
mV
%
%
μΩ
kV
MΩ
I
IN
90%
→
V
OUT
90%
C
L
=100pF
I
IN
10%
→
V
OUT
10%
C
L
=100pF
−3dB,
C
L
=100pF
I
IN
=0A
Conditions
T
a
=−40~90
C
No Loads
64.7
2.408
−31.8
−1
1
1
400
2.1
66.0
2.500
Min.
−20
Typ.
Max.
20
9
67.3
2.592
31.8
1
Units
A
mA
mV/A
V
A
%F.S.
μs
μs
kHz
mVrms
V
h-dmax
V
of-dmax
V
h-R
V
of-R
R
1
V
INS
R
INS
* These parameters can drift by the values described in ‘Reliability Tests’ section over the lifetime of the product.
** These characteristics are guaranteed by design.
MS1265-E-05
-4-
2013/06
[CQ-209A]
Characteristics Definitions
(1) Sensitivity V
h
[mV/mT], offset voltage V
of
[V]
Sensitivity is defined as the slope of the approximate straight line calculated by the least square method,
using the data of VOUT voltage (V
OUT
) when the primary current (I
IN
) is swept within the range of linear
sensing range (I
NS
). Offset voltage is defined as the intercept of the approximate straight line above.
(2) Linearity error
ρ
[%F.S.]
Linearity error is defined as the ratio of the maximum error voltage (V
d
) to the full scale (F.S.), where V
d
is
the maximum difference between the VOUT voltage (V
OUT
) and the approximate straight line calculated in
the sensitivity and offset voltage definition. Definition formula is shown in below:
ρ
= Vd / F.S. × 100
NOTE) Full scale (F.S.) is defined by the multiplication of the linear sensing range and sensitivity (See
Figure 5).
Approximate straight line
by least square method
V
OUT
(V)
V
d
F.S.
=2V
h
×|I
NS
|
−|I
NS
|
0
|I
NS
| I
IN
(A)
Figure 5. Output characteristics of CQ-209A
(3) Ratiometric error of sensitivity V
h-R
[%] and ratiometric error of offset voltage V
of-R
[%]
Output of CQ-209A is ratiometric, which means the values of sensitivity (V
h
) and offset voltage (V
of
) are
proportional to the supply voltage (V
DD
). Ratiometric error is defined as the difference between the V
h
(or
V
of
) and ideal V
h
(or V
of
) when the V
DD
is changed from 5.0V to V
DD1
(4.5V<V
DD1
<5.5V). Definition formula is
shown in below:
V
h-R
= 100 × {(V
h
(V
DD
= V
DD1
) / V
h
(V
DD
= 5V))
−
(V
DD1
/ 5)} / (V
DD1
/ 5)
V
of-R
= 100 × {(V
of
(V
DD
= V
DD1
) / V
of
(V
DD
= 5V))
−
(V
DD1
/ 5)} / (V
DD1
/ 5)
(4) Temperature drift of sensitivity V
h-d
[%]
Temperature drift of sensitivity is defined as the drift ratio of the sensitivity (V
h
) at T
a
=T
a1
(−40C<T
a1
<90C)
to the V
h
at T
a
=35C, and calculated from the formula below:
V
h-d
= 100 × (V
h
(T
a1
) / V
h
(35C)
−
1)
Maximum temperature drift of sensitivity (V
h-dmax
) is defined as the maximum value of |V
h-d
| through the
defined temperature range.
Reference data of the temperature drift of sensitivity of CQ-209A is shown in Figure 6.
MS1265-E-05
-5-
2013/06
京公网安备 11010802033920号
EEWORLD
