EEWORLDEEWORLDEEWORLD

Part Number

Search

SMBJ9.0

Description
600 W, UNIDIRECTIONAL, SILICON, TVS DIODE
Categorysemiconductor    Discrete semiconductor   
File Size82KB,4 Pages
ManufacturerTaiwan Semiconductor
Websitehttp://www.taiwansemi.com/
Download Datasheet View All

SMBJ9.0 Overview

600 W, UNIDIRECTIONAL, SILICON, TVS DIODE

SMBJ SERIES
Surface Mount Transient Voltage Suppressor
Voltage Range
5.0 to 170 Volts
600 Watts Peak Power
Features
For surface mounted application
Low profile package
Built-in strain relief
Glass passivated junction
Excellent clamping capability
Fast response time: Typically less than 1.0ps from 0 volt to
BV min.
Typical I
R
less than 1μA above 10V
High temperature soldering guaranteed:
260
O
C / 10 seconds at terminals
Plastic material used carries Underwriters Laboratory
Flammability Classification 94V-0
600 watts peak pulse power capability with a 10 x 1000 us
waveform by 0.01% duty cycle
.082(2.08)
.076(1.93)
SMB/DO-214AA
.147(3.73)
.137(3.48)
.187(4.75)
.167(4.25)
.012(.31)
.006(.15)
.103(2.61)
.078(1.99)
.012(.31)
.006(.15)
.056(1.41)
.035(0.90)
.208(5.28)
.200(5.08)
.008(.20)
.004(.10)
Mechanical Data
Case: Molded plastic
Terminals: Solder plated
Polarity: Indicated by cathode bandexcept bipolar
Standard packaging: 12mm tape (EIA STD RS-481)
Weight: 0.093gram
Dimensions in inches and (millimeters)
Maximum Ratings and Electrical Characteristics
Rating at 25℃ambient temperature unless otherwise specified.
Type Number
P
eak
P
ower
D
issipation at
T
A
=25 C, Tp=1ms(
N
ote
O
Symbol
P
PK
Pd
I
FSM
V
F
R
θ
JL
R
θ
JA
T
J
, T
STG
Value
Minimum 600
3
100
3.5 / 5.0
10
55
-65 to + 150
O
Units
Watts
Watts
Amps
Volts
℃/W
O
1)
Steady State Power Dissipation
Peak Forward Surge Current, 8.3 ms Single Half
Sine-wave Superimposed on Rated Load
(JEDEC method) (Note 2, 3) - Unidirectional Only
Maximum Instantaneous Forward Voltage at
50.0A for Unidirectional Only (Note 4)
Typical Thermal Resistance (Note 5)
Operating and Storage Temperature Range
C
Notes: 1
.
Non-repetitive Current Pulse Per Fig. 3 and Derated above T
A
=25 C Per Fig. 2.
2. Mounted on 0.4 x 0.4" (10 x 10mm) Copper Pads to Each Terminal.
3. 8.3ms Single Half Sine-wave or Equivalent Square Wave, Duty Cycle=4 pulses Per Minute
Maximum.
4. V
F
=3.5V on SMBJ5.0 thru SMBJ90 Devices and V
F
=5.0V on SMBJ100 thru SMBJ170 Devices.
5. Measured on P.C.B. with 0.27” x 0.27” (7.0mm x 7.0mm) Copper Pad Areas.
Devices for Bipolar Applications
1. For Bidrectional Use C or CA Suffix for Types SMBJ5.0 through Types SMBJ170.
2. Electrical Characteristics Apply in Both Directions.
- 602 -

Technical ResourceMore

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Robot
development
community

Index Files: 1337  2908  2918  236  1495  27  59  5  31  26 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号