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FR103TA

Description
DIODE GEN PURP 200V 1A DO41
Categorysemiconductor    Discrete semiconductor   
File Size318KB,4 Pages
ManufacturerSMC
Websitehttp://www.smc-diodes.com/
Environmental Compliance
Download Datasheet Parametric Compare View All

FR103TA Overview

DIODE GEN PURP 200V 1A DO41

FR103TA Parametric

Parameter NameAttribute value
Diode typestandard
Voltage - DC Reverse (Vr) (Maximum)200V
Current - average rectification (Io)1A
Voltage at different If - Forward (Vf1.3V @ 1A
speedFast recovery = < 500 ns, > 200mA (Io)
Reverse recovery time (trr)150ns
Current at different Vr - Reverse leakage current5µA @ 200V
Capacitance at different Vr, F15pF @ 4V,1MHz
Installation typeThrough hole
Package/casingDO-204AL, DO-41, axial
Supplier device packagingDO-41
Operating Temperature - Junction-65°C ~ 150°C
FR101-FR107
Technical Data
Data Sheet N0441, Rev. B
FAST RECOVERY RECTIFIERS
Reverse Voltage - 50 to 1000 Volts Forward Current - 1.0 Ampere
Features
The plastic package carries Underwriters Laboratory
Flammability Classification 94V-0
Fast switching for high efficiency
Low reverse leakage
High forward surge current capability
High temperature soldering guaranteed: 260 C/10
seconds,0.375”(9.5mm) lead length, 5 lbs. (2.3kg) tension
This is a Pb − Free Device
All SMC parts are traceable to the wafer lot
Additional testing can be offered upon request
FR101 THRU FR107
DO-41
Circuit Diagram
Mechanical Data
Case: JEDEC DO-41 molded plastic body
Terminals: Plated axial leads, solderable per MIL-
STD-750, Method 2026
Polarity: Color band denotes cathode end
Mounting Position: Any
Weight:0.012 ounce, 0.33 grams
Single Phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%.
Characteristic
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
0.375”(9.5mm) lead length at T
A
=75℃
Peak forward surge current 8.3ms single half sine-
wave superimposed on rated load (JEDEC Method)
Maximum instantaneous forward voltage at 1.0A
Maximum DC reverse current T
A
=25
at rated DC blocking voltage T
A
=100
Maximum Reverse Recovery Time (Note 1)
Typical Junction Capacitance (Note 2)
Typical Thermal Resistance (Note 3)
Junction Temperature
Storage Temperature Range
Maximum Ratings and Electrical Characteristics
@T
A
=25°C unless otherwise specified
Symbol FR101 FR102 FR103 FR104 FR105 FR106 FR107
V
RRM
V
RMS
V
DC
I
(AV)
I
FSM
V
F
I
R
Trr
C
J
R
θJA
T
J
T
STG
150
15.0
50.0
-65 to +150
-65 to +150
50
35
50
100
70
100
200
140
200
400
280
400
1.0
30
1.3
5.0
50.0
250
500
600
420
600
800
560
800
1000
700
1000
Units
V
V
V
A
A
V
µA
ns
pF
°C/W
°C
°C
Note: 1. Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A
2. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.
3. Thermal resistance from junction to ambient at 0.375”(9.5mm)lead length, P.C.B. mounted
China - Germany - Korea - Singapore - United States
http://www.smc-diodes.com - sales@ smc-diodes.com

FR103TA Related Products

FR103TA FR101TA FR102TA FR104TA FR105TA FR107TA FR106TA
Description DIODE GEN PURP 200V 1A DO41 DIODE GEN PURP 50V 1A DO41 DIODE GEN PURP 100V 1A DO41 DIODE GEN PURP 400V 1A DO41 DIODE GEN PURP 600V 1A DO41 DIODE GEN PURP 1KV 1A DO41 DIODE GEN PURP 800V 1A DO41
Diode type standard standard standard standard standard standard standard
Voltage - DC Reverse (Vr) (Maximum) 200V 50V 100V 400V 600V 1000V 800V
Current - average rectification (Io) 1A 1A 1A 1A 1A 1A 1A
Voltage at different If - Forward (Vf 1.3V @ 1A 1.3V @ 1A 1.3V @ 1A 1.3V @ 1A 1.3V @ 1A 1.3V @ 1A 1.3V @ 1A
speed Fast recovery = < 500 ns, > 200mA (Io) Fast recovery = < 500 ns, > 200mA (Io) Fast recovery = < 500 ns, > 200mA (Io) Fast recovery = < 500 ns, > 200mA (Io) Fast recovery = < 500 ns, > 200mA (Io) Fast recovery = < 500 ns, > 200mA (Io) Standard recovery >500ns, >200mA (Io)
Reverse recovery time (trr) 150ns 150ns 150ns 150ns 250ns 500ns 500ns
Current at different Vr - Reverse leakage current 5µA @ 200V 5µA @ 50V 5µA @ 100V 5µA @ 400V 5µA @ 600V 5µA @ 1000V 5µA @ 800V
Capacitance at different Vr, F 15pF @ 4V,1MHz 15pF @ 4V,1MHz 15pF @ 4V,1MHz 15pF @ 4V,1MHz 15pF @ 4V,1MHz 15pF @ 4V,1MHz 15pF @ 4V,1MHz
Installation type Through hole Through hole Through hole Through hole Through hole Through hole Through hole
Package/casing DO-204AL, DO-41, axial DO-204AL, DO-41, axial DO-204AL, DO-41, axial DO-204AL, DO-41, axial DO-204AL, DO-41, axial DO-204AL, DO-41, axial DO-204AL, DO-41, axial
Supplier device packaging DO-41 DO-41 DO-41 DO-41 DO-41 DO-41 DO-41
Operating Temperature - Junction -65°C ~ 150°C -65°C ~ 150°C -65°C ~ 150°C -65°C ~ 150°C -65°C ~ 150°C -65°C ~ 150°C -65°C ~ 150°C
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