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SMBJ75

Description
400 W, UNIDIRECTIONAL, SILICON, TVS DIODE
CategoryDiscrete semiconductor    diode   
File Size369KB,5 Pages
ManufacturerTaiwan Semiconductor
Websitehttp://www.taiwansemi.com/
Environmental Compliance
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SMBJ75 Overview

400 W, UNIDIRECTIONAL, SILICON, TVS DIODE

SMBJ75 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerTaiwan Semiconductor
package instructionR-PDSO-C2
Reach Compliance Code_compli
ECCN codeEAR99
Other featuresUL RECOGNIZED, EXCELLENT CLAMPING CAPABILITY
Maximum breakdown voltage102 V
Minimum breakdown voltage83.3 V
Breakdown voltage nominal value92.7 V
Maximum clamping voltage134 V
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeTRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 codeDO-214AA
JESD-30 codeR-PDSO-C2
JESD-609 codee3
Humidity sensitivity level1
Maximum non-repetitive peak reverse power dissipation600 W
Number of components1
Number of terminals2
Maximum operating temperature150 °C
Minimum operating temperature-65 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
polarityUNIDIRECTIONAL
Maximum power dissipation3 W
Certification statusNot Qualified
Maximum repetitive peak reverse voltage75 V
surface mountYES
technologyAVALANCHE
Terminal surfaceMatte Tin (Sn)
Terminal formC BEND
Terminal locationDUAL
Maximum time at peak reflow temperature30
SMBJ SERIES
600 Watts Surface Mount
Transient Voltage Suppressor
SMB/DO-214AA
.083(2.10)
.077(1.95)
Features
For surface mounted application
Low profile package
Built-in strain relief
Glass passivated junction
Excellent clamping capability
Fast response time: Typically less than 1.0ps
from 0 volt to BV min.
Typical I
R
less than 1μA above 10V
High temperature soldering guaranteed:
260
o
C / 10 seconds at terminals
Plastic material used carries Underwriters
Laboratory Flammability Classification 94V-0
600 watts peak pulse power capability with a 10
x 1000 us waveform by 0.01% duty cycle
.187(4.75)
.167(4.25)
.147(3.73)
.137(3.48)
.012(.31)
.006(.15)
.103(2.61)
.078(1.99)
.012(.31)
.006(.15)
.056(1.41)
.035(0.90)
.209(5.30)
.201(5.10)
.008(.20)
.004(.10)
Dimensions in inches and (millimeters)
Mechanical Data
Case: Molded plastic
Terminals: Pure tin plated lead free,
Polarity: Indicated by cathode band except
bipolar
Standard packaging: 12mm tape (EIA STD
RS-481)
Weight: 0.093gram
Maximum Ratings and Electrical Characteristics
Rating at 25
o
C ambient temperature unless otherwise specified.
Type Number
P
eak
P
ower
D
issipation at
T
A
=25 C, Tp=1ms (
N
ote 1)
o
Steady State Power Dissipation
Peak Forward Surge Current, 8.3 ms Single Half
Sine-wave Superimposed on Rated Load
(JEDEC method) (Note 2, 3) - Unidirectional Only
Maximum Instantaneous Forward Voltage at 50.0A for
Unidirectional Only (Note 4)
Typical Thermal Resistance (Note 5)
Symbol
P
PK
Pd
I
FSM
V
F
R
θJC
R
θJA
T
J
, T
STG
Value
Minimum 600
3
100
3.5 / 5.0
10
55
-65 to + 150
Units
Watts
Watts
Amps
Volts
o
C/W
o
Operating and Storage Temperature Range
C
1. Non-repetitive Current Pulse Per Fig. 3 and Derated above T
A
=25
o
C Per Fig. 2.
Notes:
2. Mounted on 5.0mm
2
(.013 mm Thick) Copper Pads to Each Terminal.
3. 8.3ms Single Half Sine-wave or Equivalent Square Wave, Duty Cycle=4 pulses Per Minute Maximum.
4. V
F
=3.5V on SMBJ5.0 thru SMBJ90 Devices and V
F
=5.0V on SMBJ100 thru SMBJ170 Devices.
5. Measured on P.C.B. with 0.27 x 0.27” (7.0 x 7.0mm) Copper Pad Areas
.
Devices for Bipolar Applications
1. For Bidrectional Use C or CA Suffix for Types SMBJ5.0 through Types SMBJ170.
2. Electrical Characteristics Apply in Both Directions.
Version: A06
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