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SMBJ64A

Description
600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA
CategoryDiscrete semiconductor    diode   
File Size82KB,4 Pages
ManufacturerTaiwan Semiconductor
Websitehttp://www.taiwansemi.com/
Environmental Compliance
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SMBJ64A Overview

600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA

SMBJ64A Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerTaiwan Semiconductor
package instructionGREEN, PLASTIC, SMB, 2 PIN
Reach Compliance Code_compli
ECCN codeEAR99
Other featuresUL RECOGNIZED, EXCELLENT CLAMPING CAPABILITY
Maximum breakdown voltage78.6 V
Minimum breakdown voltage71.1 V
Breakdown voltage nominal value74.9 V
Maximum clamping voltage103 V
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeTRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 codeDO-214AA
JESD-30 codeR-PDSO-C2
Humidity sensitivity level1
Maximum non-repetitive peak reverse power dissipation600 W
Number of components1
Number of terminals2
Maximum operating temperature150 °C
Minimum operating temperature-65 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
polarityUNIDIRECTIONAL
Maximum power dissipation3 W
Certification statusNot Qualified
Maximum repetitive peak reverse voltage64 V
surface mountYES
technologyAVALANCHE
Terminal surfacePure Tin (Sn)
Terminal formC BEND
Terminal locationDUAL
Maximum time at peak reflow temperature30
SMBJ SERIES
Surface Mount Transient Voltage Suppressor
Voltage Range
5.0 to 170 Volts
600 Watts Peak Power
Features
For surface mounted application
Low profile package
Built-in strain relief
Glass passivated junction
Excellent clamping capability
Fast response time: Typically less than 1.0ps from 0 volt to
BV min.
Typical I
R
less than 1μA above 10V
High temperature soldering guaranteed:
260
O
C / 10 seconds at terminals
Plastic material used carries Underwriters Laboratory
Flammability Classification 94V-0
600 watts peak pulse power capability with a 10 x 1000 us
waveform by 0.01% duty cycle
.082(2.08)
.076(1.93)
SMB/DO-214AA
.147(3.73)
.137(3.48)
.187(4.75)
.167(4.25)
.012(.31)
.006(.15)
.103(2.61)
.078(1.99)
.012(.31)
.006(.15)
.056(1.41)
.035(0.90)
.208(5.28)
.200(5.08)
.008(.20)
.004(.10)
Mechanical Data
Case: Molded plastic
Terminals: Solder plated
Polarity: Indicated by cathode bandexcept bipolar
Standard packaging: 12mm tape (EIA STD RS-481)
Weight: 0.093gram
Dimensions in inches and (millimeters)
Maximum Ratings and Electrical Characteristics
Rating at 25℃ambient temperature unless otherwise specified.
Type Number
P
eak
P
ower
D
issipation at
T
A
=25 C, Tp=1ms(
N
ote
O
Symbol
P
PK
Pd
I
FSM
V
F
R
θ
JL
R
θ
JA
T
J
, T
STG
Value
Minimum 600
3
100
3.5 / 5.0
10
55
-65 to + 150
O
Units
Watts
Watts
Amps
Volts
℃/W
O
1)
Steady State Power Dissipation
Peak Forward Surge Current, 8.3 ms Single Half
Sine-wave Superimposed on Rated Load
(JEDEC method) (Note 2, 3) - Unidirectional Only
Maximum Instantaneous Forward Voltage at
50.0A for Unidirectional Only (Note 4)
Typical Thermal Resistance (Note 5)
Operating and Storage Temperature Range
C
Notes: 1
.
Non-repetitive Current Pulse Per Fig. 3 and Derated above T
A
=25 C Per Fig. 2.
2. Mounted on 0.4 x 0.4" (10 x 10mm) Copper Pads to Each Terminal.
3. 8.3ms Single Half Sine-wave or Equivalent Square Wave, Duty Cycle=4 pulses Per Minute
Maximum.
4. V
F
=3.5V on SMBJ5.0 thru SMBJ90 Devices and V
F
=5.0V on SMBJ100 thru SMBJ170 Devices.
5. Measured on P.C.B. with 0.27” x 0.27” (7.0mm x 7.0mm) Copper Pad Areas.
Devices for Bipolar Applications
1. For Bidrectional Use C or CA Suffix for Types SMBJ5.0 through Types SMBJ170.
2. Electrical Characteristics Apply in Both Directions.
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