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MT41K256M16HA-125 V:E TR

Description
IC DRAM 4G PARALLEL 96FBGA
Categorystorage   
File Size140KB,3 Pages
ManufacturerMicron Technology
Websitehttp://www.mdtic.com.tw/
Environmental Compliance
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MT41K256M16HA-125 V:E TR Overview

IC DRAM 4G PARALLEL 96FBGA

MT41K256M16HA-125 V:E TR Parametric

Parameter NameAttribute value
memory typeVolatile
memory formatDRAM
technologySDRAM - DDR3L
storage4Gb (256M x 16)
Clock frequency800MHz
Write cycle time - words, pages-
interview time13.75ns
memory interfacein parallel
Voltage - Power1.283 V ~ 1.45 V
Operating temperature0°C ~ 95°C(TC)
Installation typesurface mount
Package/casing96-TFBGA
Supplier device packaging96-FBGA(9x14)
4Gb: x8, x16 DDR3L SDRAM Addendum
Description
Addendum
DDR3L SDRAM
MT41K512M8RH-125 V:E MT41K256M16HA-125 V:E
MT41K512M8DA-107 V:P MT41K256M16TW-107 V:P
Description
DDR3L SDRAM (1.35V) is a low voltage version of the
DDR3 (1.5V) SDRAM. Refer to the DDR3 (1.5V)
SDRAM data sheet specifications when running in
1.5V compatible mode.
Automatic self refresh (ASR)
Write leveling
Multipurpose register
Output driver calibration
Options
• Configuration
– 512 Meg x 8
– 256 Meg x 16
• FBGA package (Pb-free) – x8
– 78-ball (9mm x 10.5mm) Rev. E
– 78-ball (8mm x 10.5mm) Rev. P
• FBGA package (Pb-free) – x16
– 96-ball (9mm x 14mm) Rev. E
– 96-ball (8mm x 14mm) Rev. P
• Timing – cycle time
– 1.071ns @ CL = 13 (DDR3-1866)
– 1.25ns @ CL = 11 (DDR3-1600)
• Special options
– Visual inspection
• Operating temperature
– Commercial (0°C
T
C
+95°C)
– Industrial (–40°C
T
C
+95°C)
• Revision
Marking
512M8
256M16
RH
DA
HA
TW
-107
-125
V
None
IT
:E/:P
Features
• V
DD
= V
DDQ
= 1.35V (1.283–1.45V)
• Backward compatible to V
DD
= V
DDQ
= 1.5V ±0.075V
– Supports DDR3L devices to be backward com-
patible in 1.5V applications
• Differential bidirectional data strobe
• 8n-bit prefetch architecture
• Differential clock inputs (CK, CK#)
• 8 internal banks
• Nominal and dynamic on-die termination (ODT)
for data, strobe, and mask signals
• Programmable CAS (READ) latency (CL)
• Programmable posted CAS additive latency (AL)
• Programmable CAS (WRITE) latency (CWL)
• Fixed burst length (BL) of 8 and burst chop (BC) of 4
(via the mode register set [MRS])
• Selectable BC4 or BL8 on-the-fly (OTF)
• Self refresh mode
• T
C
of 0°C to +95°C
– 64ms, 8192-cycle refresh at 0°C to +85°C
– 32ms at +85°C to +95°C
• Self refresh temperature (SRT)
Table 1: Key Timing Parameters
Speed Grade
-107
1
-125
Note:
Data Rate (MT/s)
1866
1600
Target
t
RCD-
t
RP-CL
13-13-13
11-11-11
t
RCD
(ns)
t
RP
(ns)
CL (ns)
13.91
13.75
13.91
13.75
13.91
13.75
1. Backward compatible to 1600, CL = 11 (-125).
09005aef858c7838
4Gb_DDR3L_addendum.pdf - Rev. C 7/16 EN
1
Products and specifications discussed herein are subject to change by Micron without notice.
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2014 Micron Technology, Inc. All rights reserved.

MT41K256M16HA-125 V:E TR Related Products

MT41K256M16HA-125 V:E TR MT41K256M16HA-125 V:E MT41K512M8RH-125 V:E MT41K512M8RH-125 V:E TR
Description IC DRAM 4G PARALLEL 96FBGA IC DRAM 4G PARALLEL 96FBGA IC DRAM 4G PARALLEL 78FBGA IC DRAM 4G PARALLEL 78FBGA
memory type Volatile Volatile Volatile Volatile
memory format DRAM DRAM DRAM DRAM
technology SDRAM - DDR3L SDRAM - DDR3L SDRAM - DDR3L SDRAM - DDR3L
storage 4Gb (256M x 16) 4Gb (256M x 16) 4Gb (512M x 8) 4Gb (512M x 8)
Clock frequency 800MHz 800MHz 800MHz 800MHz
interview time 13.75ns 13.75ns 13.75ns 13.75ns
memory interface in parallel in parallel in parallel in parallel
Voltage - Power 1.283 V ~ 1.45 V 1.283 V ~ 1.45 V 1.283 V ~ 1.45 V 1.283 V ~ 1.45 V
Operating temperature 0°C ~ 95°C(TC) 0°C ~ 95°C(TC) 0°C ~ 95°C(TC) 0°C ~ 95°C(TC)
Installation type surface mount surface mount surface mount surface mount
Package/casing 96-TFBGA 96-TFBGA 78-TFBGA 78-TFBGA
Supplier device packaging 96-FBGA(9x14) 96-FBGA(9x14) 78-FBGA(9x10.5) 78-FBGA(9x10.5)
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