RMLV0816BGSB - 4S2
8Mb Advanced LPSRAM (512k word × 16bit)
R10DS0231EJ0200
Rev.2.00
2015.06.26
Description
The RMLV0816BGSB is a family of 8-Mbit static RAMs organized 524,288-word × 16-bit, fabricated by Renesas’s
high-performance Advanced LPSRAM technologies. The RMLV0816BGSB has realized higher density, higher
performance and low power consumption. The RMLV0816BGSB offers low power standby power dissipation;
therefore, it is suitable for battery backup systems. It is offered in 44pin TSOP (II).
Features
Single 3V supply: 2.4V to 3.6V
Access time:
──
Power supply voltage from 2.7V to 3.6V: 45ns (max.)
──
Power supply voltage from 2.4V to 2.7V: 55ns (max.)
Current consumption:
──
Standby: 0.45µA (typ.)
Equal access and cycle times
Common data input and output
──
Three state output
Directly TTL compatible
──
All inputs and outputs
Battery backup operation
Part Name Information
Part Name
Power supply
2.7V to 3.6V
RMLV0816BGSB-4S2
2.4V to 2.7V
55 ns
Access time
45 ns
-40 ~ +85°C
11.76mm×18.41mm 44pin plastic TSOP(II)
Temperature
Range
Package
R10DS0231EJ0200 Rev.2.00
2015.06.26
Page 1 of
12
RMLV0816BGSB - 4S2
Pin Arrangement
44pin TSOP(II)
A4
A3
A2
A1
A0
CS#
DQ0
DQ1
DQ2
DQ3
Vcc
Vss
DQ4
DQ5
DQ6
DQ7
WE#
A18
A17
A16
A15
A14
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
A5
A6
A7
OE#
UB#
LB#
DQ15
DQ14
DQ13
DQ12
Vss
Vcc
DQ11
DQ10
DQ9
DQ8
A8
A9
A10
A11
A12
A13
(Top view)
Pin Description
Pin name
V
CC
V
SS
A0 to A18
DQ0 to DQ15
CS#
OE#
WE#
LB#
UB#
Power supply
Ground
Address input
Data input/output
Chip select
Output enable
Write enable
Lower byte select
Upper byte select
Function
R10DS0231EJ0200 Rev.2.00
2015.06.26
Page 2 of
12
RMLV0816BGSB - 4S2
Block Diagram
A
0
A
1
ADDRESS
BUFFER
ROW
DECODER
MEMORY ARRAY
512k-word x16-bit
DQ0
A
18
DQ1
DQ
BUFFER
DATA
SENSE / WRITE AMPLIFIER
SELECTOR
DQ7
DQ8
COLUMN DECODER
DQ
BUFFER
DQ9
CLOCK
GENERATOR
DQ15
CS#
LB#
UB#
UPPER or
LOWER BYTE
CONTROL
Vcc
Vss
WE#
OE#
Operation Table
CS#
H
X
L
L
L
L
L
L
L
Note 1.
WE#
X
X
H
H
H
L
L
L
H
H: V
IH
L:V
IL
OE#
X
X
L
L
L
X
X
X
H
UB#
X
H
L
H
L
L
H
L
X
X: V
IH
or V
IL
LB#
X
H
L
L
H
L
L
H
X
DQ0 to DQ7
High-Z
High-Z
Dout
Dout
High-Z
Din
Din
High-Z
High-Z
DQ8 to DQ15
High-Z
High-Z
Dout
High-Z
Dout
Din
High-Z
Din
High-Z
Operation
Standby
Standby
Read
Lower byte read
Upper byte read
Write
Lower byte write
Upper byte write
Output disable
R10DS0231EJ0200 Rev.2.00
2015.06.26
Page 3 of
12
RMLV0816BGSB - 4S2
Absolute Maximum Ratings
Parameter
Power supply voltage relative to V
SS
Symbol
V
CC
Value
-0.5 to +4.6
-0.5
*2
to V
CC
+0.3
*3
0.7
-40 to +85
-65 to +150
-40 to +85
unit
V
V
W
°C
°C
°C
Terminal voltage on any pin relative to V
SS
V
T
Power dissipation
P
T
Operation temperature
Topr
Storage temperature range
Tstg
Storage temperature range under bias
Tbias
Note 2. -3.0V for pulse
≤
30ns (full width at half maximum)
3. Maximum voltage is +4.6V.
DC Operating Conditions
Parameter
Supply voltage
Symbol
V
CC
V
SS
V
IH
V
IL
Min.
2.4
0
2.0
2.2
-0.2
-0.2
Typ.
3.0
0
─
─
─
─
Max.
3.6
0
V
CC
+0.2
V
CC
+0.2
0.4
0.6
+85
Unit
V
V
V
V
V
V
°C
Test conditions
Note
Input high voltage
Input low voltage
Vcc=2.4V to 2.7V
Vcc=2.7V to 3.6V
Vcc=2.4V to 2.7V
Vcc=2.7V to 3.6V
4
4
Ambient temperature range
Ta
-40
─
Note 4. -3.0V for pulse
≤
30ns (full width at half maximum)
DC Characteristics
Parameter
Input leakage current
Output leakage current
Average operating current
I
CC1
─
I
CC2
Standby current
Standby current
I
SB
─
─
─
─
I
SB1
─
─
Output high voltage
V
OH
2.4
─
─
─
7
10
─
A
A
V
~+70°C
~+85°C
25
*5
1.5
*5
─
0.45
*5
Symbol
| I
LI
|
| I
LO
|
Min.
─
─
─
Typ.
─
─
20
*5
Max.
1
1
25
30
3
0.3
2
4
Unit
A
A
mA
mA
mA
mA
A
A
Test conditions
Vin = V
SS
to V
CC
CS# = V
IH
or OE# = V
IH
or WE# = V
IL
or LB# = UB# = V
IH
, V
I/O
= V
SS
to V
CC
Cycle = 55ns, duty =100%, I
I/O
= 0mA,
CS# = V
IL
, Others = V
IH
/V
IL
Cycle = 45ns, duty =100%, I
I/O
= 0mA,
CS# = V
IL
, Others = V
IH
/V
IL
Cycle =1s, duty =100%, I
I/O
= 0mA
CS#
≤
0.2V, V
IH
≥
V
CC
-0.2V, V
IL
≤
0.2V
CS# = V
IH
, Others = V
SS
to V
CC
~+25°C
~+40°C
Vin = V
SS
to V
CC
,
(1) CS#
≥
V
CC
-0.2V or
(2) LB# = UB#
≥
V
CC
-0.2V,
CS#
≤
0.2V
0.6
*6
I
OH
= -1mA
Vcc≥2.7V
V
OH2
2.0
─
─
V
I
OH
= -0.1mA
Output low voltage
I
OL
= 2mA
V
OL
─
─
0.4
V
Vcc≥2.7V
V
OL2
─
─
0.4
V
I
OL
= 0.1mA
Note 5. Typical parameter indicates the value for the center of distribution at 3.0V (Ta=25ºC), and not 100% tested.
Note 6. Typical parameter indicates the value for the center of distribution at 3.0V (Ta=40ºC), and not 100% tested.
R10DS0231EJ0200 Rev.2.00
2015.06.26
Page 4 of
12
RMLV0816BGSB - 4S2
Capacitance
(Ta =25°C, f =1MHz)
Parameter
Symbol
Min.
Input capacitance
C in
─
Input / output capacitance
C
I/O
─
Note 7. This parameter is sampled and not 100% tested.
Typ.
─
─
Max.
8
10
Unit
pF
pF
Test conditions
Vin =0V
V
I/O
=0V
Note
7
7
AC Characteristics
Test Conditions (Vcc = 2.4V ~ 3.6V, Ta = -40 ~ +85°C)
Input pulse levels:
V
IL
= 0.4V, V
IH
= 2.4V (Vcc=2.7V to 3.6V)
V
IL
= 0.4V, V
IH
= 2.2V (Vcc=2.4V to 2.7V)
Input rise and fall time: 5ns
Input and output timing reference level: 1.4V
Output load: See figures (Including scope and jig)
1.4V
R
L
= 500
ohm
DQ
C
L
= 30 pF
Read Cycle
Unit
Note
Min.
Max.
Min.
Max.
Read cycle time
t
RC
45
─
55
─
ns
Address access time
t
AA
─
45
─
55
ns
Chip select access time
t
ACS
─
45
─
55
ns
Output enable to output valid
t
OE
─
22
─
30
ns
Output hold from address change
t
OH
10
─
10
─
ns
LB#, UB# access time
t
BA
─
45
─
55
ns
Chip select to output in low-Z
t
CLZ
10
─
10
─
ns
8,9
LB#, UB# enable to low-Z
t
BLZ
5
─
5
─
ns
8,9
Output enable to output in low-Z
t
OLZ
5
─
5
─
ns
8,9
Chip deselect to output in high-Z
t
CHZ
0
18
0
20
ns
8,9,10
LB#, UB# disable to high-Z
t
BHZ
0
18
0
20
ns
8,9,10
Output disable to output in high-Z
t
OHZ
0
18
0
20
ns
8,9,10
Note 8. This parameter is sampled and not 100% tested.
9. At any given temperature and voltage condition, t
CHZ
max is less than t
CLZ
min, t
BHZ
max is less than t
BLZ
min,
and t
OHZ
max is less than t
OLZ
min, for any device.
10. t
CHZ
, t
BHZ
and t
OHZ
are defined as the time when the DQ pins enter a high-impedance state and are not
referred to the DQ levels.
Parameter
Symbol
Vcc=2.7V to 3.6V
Vcc=2.4V to 2.7V
R10DS0231EJ0200 Rev.2.00
2015.06.26
Page 5 of
12
京公网安备 11010802033920号
EEWORLD
