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MT25TL512HBA8E12-0AAT TR

Description
IC FLASH 512M SPI 24TPBGA
Categorystorage   
File Size1MB,87 Pages
ManufacturerMicron Technology
Websitehttp://www.mdtic.com.tw/
Environmental Compliance
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MT25TL512HBA8E12-0AAT TR Overview

IC FLASH 512M SPI 24TPBGA

MT25TL512HBA8E12-0AAT TR Parametric

Parameter NameAttribute value
memory typenon-volatile
memory formatflash memory
technologyFLASH - NOR
storage512Mb (64M x 8)
Clock frequency133MHz
Write cycle time - words, pages8ms,2.8ms
memory interfaceSPI
Voltage - Power2.7 V ~ 3.6 V
Operating temperature-40°C ~ 105°C(TA)
Installation typesurface mount
Package/casing24-TBGA
Supplier device packaging24-T-PBGA(6x8)
512Mb, Twin-Quad I/O Serial Flash Memory
Features
Micron Serial NOR Flash Memory
3V, Twin-Quad I/O, 4KB, 32KB, 64KB, Sector Erase
MT25TL512
Features
Stacked device (two 256Mb die)
SPI-compatible serial bus interface
Single and double transfer rate (STR/DTR)
Clock frequency
– 133 MHz (MAX) for all protocols in STR
– 90 MHz (MAX) for all protocols in DTR
Dual/quad I/O instruction provides increased
throughput up to 90 MB/s for each die correspond-
ing to 180 MB/s for the twin-quad device
Supported protocols in both STR and DTR
– Extended I/O protocol
– Dual I/O protocol
– Quad I/O protocol
Execute-in-place (XIP)
PROGRAM/ERASE SUSPEND operations
Volatile and nonvolatile configuration settings
Software reset
Additional reset pin for selected part numbers
3-byte and 4-byte addressability mode supported
Dedicated 64-byte OTP area outside main memory
– Readable and user-lockable
– Permanent lock with PROGRAM OTP command
Erase capability
– Die erase
– Sector erase 64KB uniform granularity
– Subsector erase 4KB, 32KB granularity
Security and write protection
– Volatile and nonvolatile locking and software
write protection for each 64KB sector
– Nonvolatile configuration locking
– Password protection
– Hardware write protection: nonvolatile bits
(BP[3:0] and TB) define protected area size
– Program/erase protection during power-up
– CRC detects accidental changes to raw data
Electronic signature
– JEDEC-standard 3-byte signature (BA19h)
– Extended device ID: two additional bytes identify
device factory options
JESD47H-compliant
– Minimum 100,000 ERASE cycles per sector
– Data retention: 20 years (TYP)
Options
• Voltage
– 2.7–3.6V
• Density
– 512Mb
• Device stacking
– B = 2 die and 1 S# pin
– H = 2 die and 2 S# pins
• Device generation
• Die revision
• Pin configuration
– RESET# and HOLD#
• Sector Size
– 64KB
• Packages – JEDEC-standard, RoHS-
compliant
– 16-pin SOP2, 300 mils body width
(SO16W)
– 24-ball T-PBGA, 05/6mm x 8mm
(TBGA24)
• Security Features
– Standard
• Special options
– Standard
– Automotive
• Operating temperature range
– From –40°C to +85°C
– From –40°C to +105°C
Marking
L
512
B
H
B
A
8
E
SF
12
0
S
A
IT
AT
PDF: 09005aef86110ec2
mt25t-qljs-L512-xBA-xxT.pdf - Rev. G 06/16 EN
1
Products and specifications discussed herein are subject to change by Micron without notice.
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2014 Micron Technology, Inc. All rights reserved.

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