EEWORLDEEWORLDEEWORLD

Part Number

Search

PSMN004-60B,118

Description
MOSFET N-CH 60V 75A D2PAK
CategoryDiscrete semiconductor    The transistor   
File Size696KB,13 Pages
ManufacturerNexperia
Websitehttps://www.nexperia.com
Download Datasheet Parametric View All

PSMN004-60B,118 Overview

MOSFET N-CH 60V 75A D2PAK

PSMN004-60B,118 Parametric

Parameter NameAttribute value
Brand NameNexperia
MakerNexperia
Parts packaging codeD2PAK
package instructionSMALL OUTLINE, R-PSSO-G2
Contacts3
Manufacturer packaging codeSOT404
Reach Compliance Codenot_compliant
ECCN codeEAR99
Other featuresLOGIC LEVEL COMPATIBLE
Avalanche Energy Efficiency Rating (Eas)500 mJ
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage60 V
Maximum drain current (ID)75 A
Maximum drain-source on-resistance0.0036 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PSSO-G2
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals2
Operating modeENHANCEMENT MODE
Maximum operating temperature175 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum pulsed drain current (IDM)400 A
Certification statusNot Qualified
surface mountYES
Terminal surfaceTin (Sn)
Terminal formGULL WING
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
PSMN004-60B
N-channel TrenchMOS SiliconMAX standard level FET
Rev. 02 — 15 December 2009
Product data sheet
1. Product profile
1.1 General description
SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in
a plastic package using TrenchMOS technology. This product is designed and qualified for
use in computing, communications, consumer and industrial applications only.
1.2 Features and benefits
Low conduction losses due to low
on-state resistance
Suitable for high frequency
applications due to fast switching
characteristics
1.3 Applications
High frequency computer motherboard
DC-to-DC convertors
OR-ing applicationss
1.4 Quick reference data
Table 1.
V
DS
I
D
P
tot
Quick reference
Conditions
T
mb
= 25 °C; V
GS
= 10 V;
see
Figure 1
and
3
T
mb
= 25 °C; see
Figure 2
Min
-
-
-
Typ
-
-
-
Max
60
75
230
Unit
V
A
W
drain-source voltage T
j
25 °C; T
j
175 °C
drain current
total power
dissipation
gate-drain charge
Symbol Parameter
Dynamic characteristics
Q
GD
V
GS
= 10 V; I
D
= 75 A;
V
DS
= 48 V; T
j
= 25 °C;
see
Figure 11
V
GS
= 10 V; I
D
= 25 A;
T
j
= 25 °C; see
Figure 9
and
10
-
54
-
nC
Static characteristics
R
DSon
drain-source
on-state resistance
-
3.1
3.6
mΩ
Qualcomm chip, what are the methods for burning?
There are many things on the Internet and in books that talk about Samsung's S3C2440 and the like. There is no emulator now. I don't know which emulator to download. Is there software to download ADS?...
zyz_npu Embedded System
NOR Flash is deleted by block and can be read by byte. I wonder if writing is also done by byte?
Will NOR also be written according to PAGE like NAND?...
159zhou Embedded System
【TI Wireless Theme Collection】 802.1x First Experience
During this period, I tried TI's 802.11 and 802.15.4, CC3200 and CC2520/CC2538 respectively. The following is a photo taken with a mobile phone in the afternoon when the sun was not very bright.CC3200...
freebsder Wireless Connectivity
Hysteresis current control algorithm C program
Does anyone have a C program for hysteresis current control algorithm that I can refer to? Or if you have done it, please come in and discuss it!...
xzyxtt DSP and ARM Processors
How to design a low-cost Bluetooth music playback system--EEWORLD University
How to design a low-cost Bluetooth music playback system : https://training.eeworld.com.cn/course/2269[size=4][color=RoyalBlue]In this video I will show you how to connect an old speaker with a cheap ...
chenyy DIY/Open Source Hardware
HT1623 datasheet
HT1623 datasheet...
maker Microchip MCU

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Robot
development
community

Index Files: 1175  307  920  1810  2171  24  7  19  37  44 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号