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SMAJ20A

Description
500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AC
CategoryDiscrete semiconductor    diode   
File Size70KB,5 Pages
ManufacturerTaiwan Semiconductor
Websitehttp://www.taiwansemi.com/
Environmental Compliance
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SMAJ20A Overview

500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AC

SMAJ20A Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerTaiwan Semiconductor
package instructionR-PDSO-C2
Reach Compliance Codecompli
ECCN codeEAR99
Samacsys DescriptiTaiwan Semi SMAJ20A Uni-Directional TVS Diode, 2-Pin SMA
Other featuresUL RECOGNIZED, EXCELLENT CLAMPING CAPABILITY
Maximum breakdown voltage24.5 V
Minimum breakdown voltage22.2 V
Maximum clamping voltage32.4 V
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeTRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 codeDO-214AC
JESD-30 codeR-PDSO-C2
JESD-609 codee3
Maximum non-repetitive peak reverse power dissipation400 W
Number of components1
Number of terminals2
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
polarityUNIDIRECTIONAL
Maximum power dissipation1 W
Certification statusNot Qualified
Maximum repetitive peak reverse voltage20 V
surface mountYES
technologyAVALANCHE
Terminal surfacePURE TIN
Terminal formC BEND
Terminal locationDUAL
Maximum time at peak reflow temperature30

SMAJ20A Preview

SMAJ SERIES
Surface Mount Transient Voltage Suppressor
Voltage Range
5.0 to 170 Volts
400 Watts Peak Power
Features
For surface mounted application
Low profile package
Built-in strain relief
Glass passivated junction
Excellent clamping capability
Fast response time: Typically less than 1.0ps from 0 volt to
BV min.
Typical I
R
less than 1μA above 10V
High temperature soldering guaranteed:
260
O
C / 10 seconds at terminals
Plastic material used carries Underwriters Laboratory
Flammability Classification 94V-0
400 watts peak pulse power capability with a 10 x 1000 us
waveform by 0.01% duty cycle (300W above 78V).
SMA/DO-214AC
.062(1.58)
.050(1.27)
.111(2.83)
.090(2.29)
.187(4.75)
.160(4.06)
.103(2.61)
.078(1.99)
Mechanical Data
Case: Molded plastic
Terminals: Solder plated
Polarity: Indicated by cathode band
Standard packaging: 12mm tape (EIA STD RS-481)
Weight: 0.064 gram
.056(1.41)
.035(0.90)
.210(5.33)
.195(4.95)
.012(.31)
.006(.15)
.008(.20)
.004(.10)
Dimensions in inches and (millimeters)
Maximum Ratings and Electrical Characteristics
Rating at 25℃ambient temperature unless otherwise specified.
Type Number
P
eak
P
ower
D
issipation at
T
A
=25 C, Tp=1ms(
N
ote 1)
O
Steady State Power Dissipation
Peak Forward Surge Current, 8.3 ms Single Half
Sine-wave Superimposed on Rated Load
(JEDEC method) (Note 2, 3)
Maximum Instantaneous Forward Voltage at 25.0A
for Unidirectional Only
Operating and Storage Temperature Range
Symbol
P
PK
Pd
I
FSM
V
F
Value
Minimum 400
1
40.0
3.5
Units
Watts
Watts
Amps
Volts
O
T
J
, T
STG
-55 to + 150
C
O
Notes: 1. Non-repetitive Current Pulse Per Fig. 3 and Derated above
T
A
=25 C
Per Fig. 2.
2. Mounted on 0.2 x 0.2" (5 x 5mm) Copper Pads to Each Terminal.
3. 8.3ms Single Half Sine-wave or Equivalent Square Wave, Duty Cycle=4 Pulses Per
Minute Maximum.
Devices for Bipolar Applications
1. For Bidrectional Use C or CA Suffix forTypes SMAJ5.0 through Types SMAJ170.
2. Electrical Characteristics Apply in Both Directions.
- 530 -
RATINGS AND CHARACTERISTIC CURVES (SMAJ SERIES)
FIG.1- PEAK PULSE POWER RATING CURVE
PEAK PULSE POWER (Pppm) or CURRENT (lpp)
DERATING IN PERCENTAGE, %
100
100
FIG.2- PULSE DERATING CURVE
Pppm, PEAK PULSE POWER, KW
NON-REPETITIVE
PULSE WAVEFORM
SHOWN in FIG. 3
T
A
=25
0
C
75
10
50
1.0
25
0.2" sq 5.0mm
2
COPPER PAD AREAS
0.1
0.1 s
1.0 s
10 s
100 s
1.0ms
10ms
0
0
25
50
75
100
125
O
150
175
200
td. PULSE WIDTH, sec.
TA, AMBIENT TEMPERATURE. C
FIG.3- PULSE WAVEFORM
150
50
FIG.5- MAXIMUM NON-REPETITIVE PEAK FORWARD
SURGE CURRENT
PEAK FORWARD SURGE CURRENT. (A)
lppm, PEAK PULSE CURRENT %
PULSE WIDTH (td) is DEFINED
tr=10 sec. AS THE POINT WHERE THE PEAK
CURRENT DECAYS to 50% of lppm
100
40
8.3ms Single Half Sine Wave
JEDEC Method
TJ=TJ max.
PEAK VALUE
lppm
HALF VALUE- lpp
2
10/1000 sec. WAVEFORM
AS DEFINED BY R.E.A.
30
20
50
10
0
0
td
1.0
2.0
t, TIME, ms
3.0
4.0
0
1
10
NUMBER OF CYCLES AT 60Hz
100
FIG.4- TYPICAL JUNCTION CAPACITANCE
10,000
Tj=25
0
C
f=1.0MHz
Vsig=50mVp-p
Cj, JUNCTION CAPACITANCE, pF
1,000
MEASURED AT
ZERO BIAS
100
MEASURED AT
STAND-OFF
VOLTAGE,V
WM
10
1
10
V(BR), BREAKDOWN VOLTAGE. (V)
100
200
- 531 -
ELECTRICAL CHARACTERISTICS (TA=25
O
C unless otherwise noted)
Device
Device
Marking
Code
AD
AE
AF
AG
AH
AK
AL
AM
AN
AP
AQ
AR
AS
AT
AU
AV
AW
AX
AY
AZ
BD
BE
BF
BG
BH
BK
BL
BM
BN
BP
BQ
BR
BS
BT
BU
BV
BW
BX
BY
BZ
CD
CE
CF
CG
CH
CK
CL
CM
CN
CP
CQ
CR
CS
CT
Working Peak
Reverse
Voltage
V
WM
(Volts)
5.0
5.0
6.0
6.0
6.5
6.5
7.0
7.0
7.5
7.5
8.0
8.0
8.5
8.5
9.0
9.0
10
10
11
11
12
12
13
13
14
14
15
15
16
16
17
17
18
18
20
20
22
22
24
24
26
26
28
28
30
30
33
33
36
36
40
40
43
43
Breakdown Voltage
SMAJ5.0
SMAJ5.0A
SMAJ6.0
SMAJ6.0A
SMAJ6.5
SMAJ6.5A
SMAJ7.0
SMAJ7.0A
SMAJ7.5
SMAJ7.5A
SMAJ8.0
SMAJ8.0A
SMAJ8.5
SMAJ8.5A
SMAJ9.0
SMAJ9.0A
SMAJ10
SMAJ10A
SMAJ11
SMAJ11A
SMAJ12
SMAJ12A
SMAJ13
SMAJ13A
SMAJ14
SMAJ14A
SMAJ15
SMAJ15A
SMAJ16
SMAJ16A
SMAJ17
SMAJ17A
SMAJ18
SMAJ18A
SMAJ20
SMAJ20A
SMAJ22
SMAJ22A
SMAJ24
SMAJ24A
SMAJ26
SMAJ26A
SMAJ28
SMAJ28A
SMAJ30
SMAJ30A
SMAJ33
SMAJ33A
SMAJ36
SMAJ36A
SMAJ40
SMAJ40A
SMAJ43
SMAJ43A
V(
BR
) (Volts)
at I
T
Min.
Max.
6.40
7.30
6.40
7.00
6.67
8.15
6.67
7.37
7.22
8.82
7.22
7.98
7.78
9.51
7.78
8.60
8.33
10.3
8.33
9.21
8.89
10.9
8.89
9.83
9.44
11.5
9.44
10.4
10.0
12.2
10.0
11.1
11.1
13.6
11.1
12.3
12.2
14.9
12.2
13.5
13.3
16.3
13.3
14.7
14.4
17.6
14.4
15.9
15.6
19.1
15.6
17.2
16.7
20.4
16.7
18.5
17.8
21.8
17.8
19.7
18.9
23.1
18.9
20.9
20.0
24.4
20.0
22.1
22.2
27.1
22.2
24.5
24.4
29.8
24.4
26.9
26.7
32.6
26.7
29.5
28.9
35.3
28.9
31.9
31.1
38.0
31.1
34.4
33.3
40.7
33.3
36.8
36.7
44.9
36.7
40.6
40.0
48.9
40.0
44.2
44.4
54.3
44.4
49.1
47.8
58.4
47.8
52.8
Test
Current
I
T
(mA)
10
10
10
10
10
10
10
10
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
Maximum
Clamping
Voltage at I
PPM
V
C
(Volts)
(Note 5)
9.6
9.2
11.4
10.3
12.3
11.2
13.3
12.0
14.3
12.9
15.0
13.6
15.9
14.4
16.9
15.4
18.8
17.0
20.1
18.2
22.0
19.9
23.8
21.5
25.8
23.2
26.9
24.4
28.8
26.0
30.5
27.6
32.2
29.2
35.8
32.4
39.4
35.5
43.0
38.9
46.6
42.1
50.0
45.4
53.5
48.4
59.0
53.3
64.3
58.1
71.4
64.5
76.7
69.4
Maximum
Peak Pulse
Surge Current
I
PPM
(Note 5)(Amps)
41.7
43.5
35.1
38.8
32.5
35.7
30.1
33.3
28.0
31.0
26.7
29.4
25.2
27.8
23.7
26.0
21.3
23.5
19.9
22.0
18.2
20.1
16.8
18.6
15.5
17.2
14.9
16.4
13.9
15.4
13.1
14.5
12.4
13.7
11.2
12.3
10.2
11.3
9.3
10.3
8.6
9.5
8.0
8.8
7.5
8.3
6.8
7.5
6.2
6.9
5.6
6.2
5.2
5.8
Maximum
Reverse
Leakage
at V
WM
I
D
(uA)
800
800
800
800
500
500
200
200
100
100
50.0
50.0
10.0
10.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
- 532 -
ELECTRICAL CHARACTERISTICS (TA=25
O
C unless otherwise noted)
Device
Device
Marking
Code
Working Peak
Reverse
Voltage
V
WM
(Volts)
45
45
48
48
51
51
54
54
58
58
60
60
64
64
70
70
75
75
78
78
85
85
90
90
100
100
110
110
120
120
130
130
150
150
160
160
170
170
Breakdown Voltage
SMAJ45
CU
SMAJ45A
CV
SMAJ48
CW
SMAJ48A
CX
SMAJ51
CY
SMAJ51A
CZ
SMAJ54
RD
SMAJ54A
RE
SMAJ58
RF
SMAJ58A
RG
SMAJ60
RH
SMAJ60A
RK
SMAJ64
RL
SMAJ64A
RM
SMAJ70
RN
SMAJ70A
RP
SMAJ75
RQ
SMAJ75A
RR
SMAJ78
RS
SMAJ78A
RT
SMAJ85
RU
SMAJ85A
RV
SMAJ90
RW
SMAJ90A
RX
SMAJ100
RY
SMAJ100A
RZ
SMAJ110
SD
SMAJ110A
SE
SMAJ120
SF
SMAJ120A
SG
SMAJ130
SH
SMAJ130A
SK
SMAJ150
SL
SMAJ150A
SM
SMAJ160
SN
SMAJ160A
SP
SMAJ170
SQ
SMAJ170A
SR
Notes:
O
1. Non-repetitive current pulse, per Fig. 3 and derated above T
A
=25 C per Fig. 2
2
2. Mounted on 5.0mm copper pads to each terminal
O
3. Lead temperature at TL=75 C
4. Measured on 8.3ms single half sine-wave duty cycle=4 pulses per minutes maximum
5. Peak pulse power waveform is 10/1000 us
6. For BI-Directional devices having VR of 10 volts and under, the IR limit is double.
V(
BR
) (Volts)
at I
T
Min.
Max.
50.0
61.1
50.0
55.3
53.3
65.1
53.3
58.9
56.7
69.3
56.7
62.7
60.0
73.3
60.0
66.3
64.4
78.7
64.4
71.2
66.7
81.5
66.7
73.7
71.1
86.9
71.1
78.6
77.8
95.1
77.8
86.0
83.3
102
83.3
92.1
86.7
106
86.7
95.8
94.4
115
94.4
104
100
122
100
111
111
136
111
123
122
149
122
135
133
163
133
147
144
176
144
159
167
204
167
185
178
218
178
197
189
231
189
209
Test
Current
I
T
(mA)
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
Maximum
Clamping
Voltage at I
PPM
V
C
(Volts)
(Note 5)
80.3
72.7
85.5
77.4
91.1
82.4
96.3
87.1
103
93.6
107
96.8
114
103
125
113
134
121
139
126
151
137
160
146
179
162
196
177
214
193
231
209
266
243
287
259
304
275
Maximum
Peak Pulse
Surge Current
I
PPM
(Note 5)(Amps)
5.0
5.5
4.7
5.2
4.4
4.9
4.2
4.6
3.9
4.3
3.7
4.1
3.5
3.9
3.2
3.5
3.0
3.3
2.9
3.2
2.0
2.2
1.9
2.1
1.7
1.9
1.6
1.7
1.4
1.6
1.3
1.5
1.1
1.3
1.0
1.2
1.0
1.1
Maximum
Reverse
Leakage
at V
WM
I
D
(uA)
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
- 533 -
This device is designed specifically for
APPLICATION NOTES:
Recommended Pad Layout
The pad dimensions should be 0.010" longer than the
contact size in the lead axis. This allows a solder fillet
to form, see figure below. Contact factory for soldering
methods.
transiient voltage suppression from threats
generated by ESD for board levelload
switching components.
The wide leads assure a large surface contact
for good heat disipation, and a low resistance
path for surge current flow to ground.
This series is designed to optimize board
space and for use with surface mount technology
automated assembly equipment.
They can be easily mounted on printed circuit
boards and ceramic substrates to protect
sensitive components from transient voltage
damage.
Dimensions in inches and (millimeters)
- 534 -
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