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BYD77B,115

Description
DIODE AVALANCHE 100V 850MA MELF
CategoryDiscrete semiconductor    diode   
File Size88KB,12 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
Download Datasheet Parametric View All

BYD77B,115 Overview

DIODE AVALANCHE 100V 850MA MELF

BYD77B,115 Parametric

Parameter NameAttribute value
MakerNXP
package instructionO-LELF-R2
Contacts2
Reach Compliance Codeunknown
ECCN codeEAR99
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
JESD-30 codeO-LELF-R2
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals2
Maximum operating temperature175 °C
Maximum output current0.85 A
Package body materialGLASS
Package shapeROUND
Package formLONG FORM
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Certification statusNot Qualified
Maximum repetitive peak reverse voltage100 V
Maximum reverse recovery time0.025 µs
surface mountYES
technologyAVALANCHE
Terminal surfaceTIN
Terminal formWRAP AROUND
Terminal locationEND
Maximum time at peak reflow temperatureNOT SPECIFIED
Base Number Matches1
DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D121
BYD77 series
Ultra fast low-loss
controlled avalanche rectifiers
Product specification
Supersedes data of 1996 May 24
1999 Nov 15
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