AT-41511, AT-41533
General Purpose, Low Noise NPN
Silicon Bipolar Transistors
Data Sheet
Description
Avago’s AT-41511 and AT-41533 are general purpose NPN
bipolar transistors that offer excellent high frequency
performance at an economical price. The AT-41533 uses
the 3 lead SOT-23, while the AT-41511 places the same
die in the lower parasitic 4 lead SOT-143. Both packages
are industry standard, and compatible with high volume
surface mount assembly techniques.
The 4 micron emitter-to-emitter pitch of these transistors
yields high performance products that can perform a
multiplicity of tasks. The 14 emitter finger interdigitated
geometry yields an intermediate-sized transistor with easy
to match to impedances, low noise figure, and moderate
power.
Optimized for best performace from a 5 to 8 volt bias
supply, these transistors are also good performers at 2.7
V. Applications include use in wireless systems as an LNA,
gain stage, buffer, oscillator, or active mixer.
An optimum noise match near 50 ohms at 900 MHz makes
these devices particularly easy to use as LNAs. Typical ampli-
fier designs at 900 MHz yield 1 dB noise figures with 15 dB
or more associated gain at a 5 V, 5 mA bias, with good gain
and noise figure obtainable at biases as low as 2 mA.
The AT-415 series bipolar transistors are fabricated using
Avago’s 10 GHz f
T
Self-Aligned-Transistor (SAT) process.
The die are nitride passivated for surface protection. Ex-
cellent device uniformity, performance and reliability are
produced by the use of ion-implantation, self-alignment
techniques, and gold metalization in the fabrication of
these devices.
Features
x
General Purpose NPN Bipolar Transistor
x
900 MHz Performance:
AT-41511: 1 dB NF, 15.5 dB G
A
AT-41533: 1 dB NF, 14.5 dB G
A
x
Characterized for 3, 5, and 8 Volt Use
x
SOT-23 and SOT-143 SMT Plastic Packages
x
Tape-and-Reel Packaging Option Available
x
Lead-free
Pin Connections and Package Marking
EMITTER COLLECTOR
415x
BASE
EMITTER
SOT 143 (AT-41511)
COLLECTOR
415x
BASE
EMITTER
SOT 23 (AT-41533)
Notes:
Top View. Package Marking provides orientation and identification.
"x" is the date code.
AT-41511, AT-41533 Absolute Maximum Ratings
Symbol
V
EBO
V
CBO
V
CEO
I
C
P
T
T
j
T
STG
Parameter
Emitter-Base Voltage
Collector-Base Voltage
Collector-Emitter Voltage
Collector Current
Power Dissipation
[2,3]
Junction Temperature
Storage Temperature
Units
V
V
V
mA
mW
°C
°C
Absolute
Maximum
[1]
1.5
20
12
50
225
150
-65 to 150
Thermal Resistance:
[2]
T
jc
=550°C/W
Notes:
1. Operation of this device above any one of
these parameters may cause permanent
damage.
2. T
Mounting Surface
= 25°C.
3. Derate at 1.82 mW/°C for T
C
> 26°C.
Electrical Specifications, T
A
= 25°C
AT-41511
Symbol
h
FE
I
CBO
I
EBO
AT-41533
Max
270
0.2
1.0
Parameters and Test Conditions
Forward Current Transfer Ratio
Collector Cutoff Current
Emitter Cutoff Current
V
CE
= 5 V
I
C
= 5 mA
V
CB
= 3 V
V
EB
= 1 V
Units
-
μA
μA
Min
30
Typ
150
Min
30
Typ
150
Max
270
0.2
1.0
Characterization Information, T
A
= 25°C
AT-41511
Symbol
NF
G
A
P
1dB
G
1dB
IP
3
|S
21E
|
2
AT-41533
Min
Typ
1.0
1.6
14.5
9
14.5
14.5
25
10.8
12.8
5.2
Parameters and Test Conditions
Noise Figure
V
CE
= 5 V, I
C
= 5 mA
Associated Gain
V
CE
= 5 V, I
C
= 5 mA
Power at 1 dB Gain Compression (opt tuning)
V
CE
= 5 V, I
C
= 25 mA
Gain at 1 dB Gain Compression (opt tuning)
V
CE
= 5 V, I
C
= 25 mA
Output Third Order Intercept Point,
V
CE
= 5 V, I
C
=25 mA (opt tuning)
Gain in 50 Ω system; V
CE
= 5 V, I
C
= 5 mA
f = 0.9 GHz
f = 2.4 GHz
f = 0.9 GHz
f = 2.4 GHz
f = 0.9 GHz
f = 0.9 GHz
f = 0.9 GHz
f = 0.9 GHz
f = 2.4 GHz
Units
dB
dB
dBm
dB
dBm
dB
Min
Typ
1.0
1.7
15.5
11
14.5
17.5
25
13.5
15.5
7.9
2
AT-41511, AT-41533 Typical Performance
3.0
25 mA
2.5
NOISE FIGURE (dB)
NOISE FIGURE (dB)
2.5
NOISE FIGURE (dB)
2 mA
2.0
1.5
1.0
0.5
0
0.1
10 mA
5 mA
3.0
25 mA
3.0
2.5
25 mA
2.0
10 mA
1.5
1.0
0.5
0
0.1
5 mA
2.0
1.5
1.0
0.5
0
0.1
10 mA
2, 5 mA
0.6
1.1
1.6
2.1
2.6
0.6
1.1
1.6
2.1
2.6
0.6
1.1
1.6
2.1
2.6
FREQUENCY (GHz)
FREQUENCY (GHz)
FREQUENCY (GHz)
Figure 1. AT-41511 and AT-41533 Minimum Noise
Figure vs. Frequency and Current at V
CE
= 2.7 V.
Figure 2. AT-41511 and AT-41533 Minimum Noise
Figure vs. Frequency and Current at V
CE
= 5 V.
Figure 3. AT-41511 and AT-41533 Minimum Noise
Figure vs. Frequency and Current at V
CE
= 8 V.
20
10, 25 mA
15
5 mA
2 mA
10
10, 25 mA
5 mA
2 mA
PKG 11
25
20
PKG 11
20
PKG 11
15
10, 25 mA
5 mA
10, 25 mA
5 mA
20
15
G
a
PKG 11 (dB)
G
a
PKG 33 (dB)
G
a
(dB)
G
a
(dB)
PKG 33
10
PKG 33
10
15
10, 25 mA
5 mA
10, 25 mA
5 mA
5
PKG 33
0
0.1
0.6
1.1
1.6
2.1
10
5
5
5
2.6
0
0.1
0.6
1.1
1.6
2.1
2.6
0
0.1
0.6
1.1
1.6
2.1
2.6
FREQUENCY (GHz)
FREQUENCY (GHz)
FREQUENCY (GHz)
Figure 4. AT-41511 and AT-41533 Associated Gain
vs. Frequency and Current at V
CE
= 2.7 V.
Figure 5. AT-41511 and AT-41533 Associated Gain
vs. Frequency and Current at V
CE
= 5 V.
Figure 6. AT-41511 and AT-41533 Associated Gain
vs. Frequency and Current at V
CE
= 8 V.
20
20
20
25 mA
15
15
25 mA
15
P
1 dB
(dBm)
P
1 dB
(dBm)
P
1 dB
(dBm)
10 mA
10
25 mA
10 mA
5 mA
10
10 mA
10
5 mA
5 mA
5
5
5
0
0.1
0.6
1.1
1.6
2.1
2.6
0
0.1
0.6
1.1
1.6
2.1
2.6
0
0.1
0.6
1.1
1.6
2.1
2.6
FREQUENCY (GHz)
FREQUENCY (GHz)
FREQUENCY (GHz)
Figure 7. AT-41511 and AT-41533 P
1dB
vs.
Frequency and Bias at V
CE
= 2.7 V, with Optimal
Tuning.
Figure 8. AT-41511 and AT-41533 P
1dB
vs.
Frequency and Bias at V
CE
= 5 V, with Optimal
Tuning.
Figure 9. AT-41511 and AT-41533 P
1dB
vs.
Frequency and Bias at V
CE
= 8 V, with Optimal
Tuning.
3
AT-41511 Typical Scattering Parameters, Common Emitter,
Z
o
= 50 Ω, V
CE
= 2.7 V, I
C
= 5 mA
Freq.
GHz
0.1
0.5
0.9
1.0
1.5
1.8
2.0
2.4
3.0
4.0
5.0
S
11
Mag
0.84
0.59
0.49
0.48
0.46
0.46
0.46
0.47
0.5
0.56
0.61
Ang
-27
-102
-141
-149
-176
170
162
148
130
106
87
dB
23.44
19.01
15.09
14.30
11.15
9.69
8.86
7.37
5.58
3.25
1.36
S
21
Mag
14.854
8.924
5.684
5.189
3.61
3.051
2.774
2.337
1.901
1.454
1.17
Ang
161
115
93
89
72
64
59
50
36
17
0
dB
-34.89
-24.88
-22.97
-22.73
-21.21
-20.26
-19.74
-18.64
-17.14
-14.89
-12.96
S
12
Mag
0.018
0.057
0.071
0.073
0.087
0.097
0.103
0.117
0.139
0.18
0.225
30
S
22
Ang
76
48
43
43
44
45
45
46
45
42
37
MSG
Mag
0.95
0.65
0.51
0.49
0.44
0.43
0.42
0.42
0.41
0.4
0.4
Ang
-11
-34
-39
-39
-43
-45
-47
-51
-59
-73
-91
AT-41511 Typical Noise Parameters,
GAIN (dB)
25
20
15
Common Emitter, Z
o
= 50 Ω, V
CE
= 2.7 V, I
C
= 5 mA
Freq
F
min
*
opt
GHz
dB
Mag
0.1
0.9
1.8
2.4
0.8
1.0
1.4
1.7
0.45
0.39
0.32
0.40
Ang
6
63
137
177
R
n
-
0.25
0.19
0.12
0.09
MAG
10
S21
MSG
5
0
0
1
2
3
4
5
FREQUENCY (GHz)
Figure 10. AT-41511 Gains vs. Frequency at V
CE
=
2.7 V, I
C
= 5 mA.
AT-41533 Typical Scattering Parameters, Common Emitter,
Z
o
= 50 Ω, V
CE
= 2.7 V, I
C
= 5 mA
Freq.
GHz
0.1
0.5
0.9
1.0
1.5
1.8
2.0
2.4
3.0
4.0
5.0
S
11
Mag
0.78
0.35
0.23
0.21
0.20
0.22
0.23
0.26
0.30
0.37
0.44
Ang
-30
-99
-144
-154
162
144
134
118
101
80
62
dB
23.43
16.91
12.50
11.65
8.50
7.09
6.30
4.97
3.45
1.66
0.35
S
21
Mag
14.834
7.004
4.219
3.826
2.661
2.261
2.065
1.773
1.488
1.211
1.041
Ang
155
103
84
80
64
56
51
42
30
13
-1
dB
-33.98
-24.58
-21.21
-20.54
-17.46
-15.97
-15.09
-13.39
-11.21
-8.20
-5.90
S
12
Mag
0.020
0.059
0.087
0.094
0.134
0.159
0.176
0.214
0.275
0.389
0.507
30
25
20
S
22
Ang
75
60
62
63
64
63
63
61
56
46
33
Mag
0.94
0.62
0.55
0.54
0.52
0.51
0.51
0.50
0.48
0.45
0.42
Ang
-12
-28
-30
-31
-36
-40
-42
-48
-58
-80
-104
AT-41533 Typical Noise Parameters,
Common Emitter, Z
o
= 50 Ω, V
CE
= 2.7 V, I
C
= 5 mA
Freq
GHz
0.1
0.9
1.8
2.4
MSG
F
min
dB
0.7
1.0
1.4
1.6
*
opt
Mag
0.45
0.25
0.38
0.54
R
n
Ang
8
94
-159
-122
GAIN (dB)
15
MAG
-
0.20
0.13
0.08
0.16
10
S21
MSG
5
0
0
1
2
3
4
5
FREQUENCY (GHz)
Figure 11. AT-41533 Gains vs. Frequency at V
CE
=
2.7 V, I
C
= 5 mA.
4
AT-41511 Typical Scattering Parameters,
Common Emitter, Z
o
= 50 Ω, V
CE
= 2.7 V, I
C
= 25 mA
Freq.
GHz
0.1
0.5
0.9
1.0
1.5
1.8
2.0
2.4
3.0
4.0
5.0
S
11
Mag
0.49
0.53
0.53
0.53
0.54
0.55
0.56
0.57
0.60
0.64
0.67
Ang
-91
-168
172
169
153
145
140
129
116
95
79
dB
29.26
18.55
13.62
12.73
9.34
7.86
6.97
5.47
3.67
1.30
-0.58
S
21
Mag
29.048
8.459
4.798
4.330
2.932
2.473
2.232
1.877
1.525
1.162
0.935
Ang
136
92
79
76
63
57
52
44
32
14
-1
dB
-37.72
-30.46
-26.56
-25.68
-22.50
-21.01
-20.09
-18.49
-16.54
-13.98
-11.90
S
12
Mag
0.013
0.030
0.047
0.052
0.075
0.089
0.099
0.119
0.149
0.200
0.254
30
25
20
S
22
Ang
62
61
66
67
67
66
66
64
59
51
43
MSG
Mag
0.73
0.45
0.42
0.42
0.42
0.42
0.42
0.42
0.41
0.40
0.39
Ang
-22
-23
-26
-27
-34
-38
-41
-48
-58
-75
-96
AT-41511 Typical Noise Parameters,
Freq
GHz
0.1
0.9
1.8
2.4
F
min
dB
1.6
1.9
2.3
2.7
*
opt
Mag
0.13
0.24
0.40
0.50
R
n
Ang
18
-162
-137
-122
GAIN (dB)
Common Emitter, Z
o
= 50 Ω, V
CE
= 2.7 V, I
C
= 25 mA
-
0.16
0.13
0.23
0.35
15
MAG
10
S21
MSG
5
0
0
1
2
3
4
5
FREQUENCY (GHz)
Figure 12. AT-41511 Gains vs. Frequency at V
CE
=
2.7 V, I
C
= 25 mA.
AT-41533 Typical Scattering Parameters,
Common Emitter, Z
o
= 50 Ω, V
CE
= 2.7 V, I
C
= 25 mA
Freq.
GHz
0.1
0.5
0.9
1.0
1.5
1.8
2.0
2.4
3.0
4.0
5.0
S
11
Mag
0.34
0.19
0.20
0.20
0.24
0.25
0.27
0.29
0.33
0.39
0.45
Ang
-75
-168
161
154
132
121
115
105
93
76
60
dB
29.37
17.63
12.73
11.84
8.56
7.12
6.32
4.99
3.46
1.69
0.40
S
21
Mag
29.404
7.614
4.329
3.909
2.679
2.271
2.071
1.777
1.489
1.215
1.047
Ang
127
88
74
71
59
52
47
39
27
11
-3
dB
-37.08
-25.68
-20.82
-19.91
-16.42
-14.85
-13.94
-12.32
-10.31
-7.66
-5.73
S
12
Mag
0.014
0.052
0.091
0.101
0.151
0.181
0.201
0.242
0.305
0.414
0.517
30
S
22
Ang
72
76
74
74
70
67
65
61
54
42
29
MSG
Mag
0.71
0.47
0.46
0.45
0.45
0.44
0.44
0.43
0.41
0.37
0.33
Ang
-21
-20
-24
-26
-33
-38
-41
-48
-59
-81
-106
AT-41533 Typical Noise Parameters,
Freq
GHz
0.1
0.9
1.8
2.4
25
20
F
min
dB
1.3
1.6
1.9
2.1
*
opt
Mag
0.10
0.25
0.48
0.59
R
n
Ang
24
-158
-122
-101
GAIN (dB)
Common Emitter, Z
o
= 50 Ω, V
CE
= 2.7 V, I
C
= 25 mA
-
0.12
0.11
0.19
0.37
15
10
MAG
S21
MSG
5
0
0
1
2
3
4
5
FREQUENCY (GHz)
Figure 13. AT-41533 Gains vs. Frequency at V
CE
=
2.7 V, I
C
= 25 mA.
5
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