BSZ088N03MSG
MOSFET
OptiMOSª3M-SeriesPower-MOSFET,30V
Features
•Optimizedfor5Vdriverapplication(Notebook,VGA,POL)
•LowFOM
SW
forHighFrequencySMPS
•100%avalanchetested
•N-channel
•Verylowon-resistanceR
DS(on)
@V
GS
=4.5V
•ExcellentgatechargexR
DS(on)
product(FOM)
•QualifiedaccordingtoJEDEC
1)
fortargetapplications
•Superiorthermalresistance
•Pb-freeplating;RoHScompliant
•HalogenfreeaccordingtoIEC61249-2-21
S1
8D
7D
6D
5D
S3O8
Table1KeyPerformanceParameters
Parameter
V
DS
R
DS(on),max
,V
GS
=10V
R
DS(on),max
,V
GS
=4.5V
I
D
Value
30
8
9.7
50
Unit
V
mΩ
mΩ
A
S2
S3
G4
Type/OrderingCode
BSZ088N03MS G
Package
PG-TSDSON-8
Marking
088N03M
RelatedLinks
-
1)
J-STD20 and JESD22
Final Data Sheet
1
Rev.2.1,2020-07-27
OptiMOSª3M-SeriesPower-MOSFET,30V
BSZ088N03MSG
TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Final Data Sheet
2
Rev.2.1,2020-07-27
OptiMOSª3M-SeriesPower-MOSFET,30V
BSZ088N03MSG
1Maximumratings
atT
A
=25°C,unlessotherwisespecified
Table2Maximumratings
Parameter
Symbol
Values
Min.
-
-
-
-
-
-
-
-
-20
-
-
-55
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
Max.
50
32
45
29
11
200
20
25
20
35
2.1
150
Unit
Note/TestCondition
V
GS
=10V,T
C
=25°C
V
GS
=10V,T
C
=100°C
V
GS
=4.5V,T
C
=25°C
V
GS
=4.5V,T
C
=100°C
V
GS
=4.5V,T
A
=25°C,R
thJA
=60K/W
2)
T
C
=25°C
T
C
=25°C
I
D
=20A,R
GS
=25Ω
-
T
C
=25°C
T
A
=25°C,R
thJA
=60K/W
2)
IEC climatic category;
DIN IEC 68-1: 55/150/56
Continuous drain current
1)
I
D
A
Pulsed drain current
3)
Avalanche current, single pulse
4)
Avalanche energy, single pulse
Gate source voltage
Power dissipation
Operating and storage temperature
I
D,pulse
I
AS
E
AS
V
GS
P
tot
T
j
,T
stg
A
A
mJ
V
W
°C
2Thermalcharacteristics
Table3Thermalcharacteristics
Parameter
Thermal resistance, junction - case
Device on PCB,
6 cm
2
cooling area
2)
Symbol
R
thJC
R
thJA
Values
Min.
-
-
Typ.
-
-
Max.
3.6
60
Unit
K/W
K/W
Note/TestCondition
-
-
1)
Rating refers to the product only with datasheet specified absolute maximum values, maintaining case temperature
at 25°C. For higher case temperature please refer to Diagram 2. De-rating will be required based on the actual
environmental conditions.
2)
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
3)
See Diagram 3 for more detailed information
4)
See Diagram 13 for more detailed information
Final Data Sheet
3
Rev.2.1,2020-07-27
OptiMOSª3M-SeriesPower-MOSFET,30V
BSZ088N03MSG
3Electricalcharacteristics
atT
j
=25°C,unlessotherwisespecified
Table4Staticcharacteristics
Parameter
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Gate resistance
Transconductance
Symbol
V
(BR)DSS
V
GS(th)
I
DSS
I
GSS
R
DS(on)
R
G
g
fs
Values
Min.
30
1
-
-
-
-
-
0.5
28
Typ.
-
-
0.1
10
10
8.2
6.7
1
57
Max.
-
2
1
100
100
9.7
8.0
1.8
-
Unit
V
V
µA
nA
mΩ
Ω
S
Note/TestCondition
V
GS
=0V,I
D
=1mA
V
DS
=V
GS
,I
D
=250µA
V
DS
=30V,V
GS
=0V,T
j
=25°C
V
DS
=30V,V
GS
=0V,T
j
=125°C
V
GS
=16V,V
DS
=0V
V
GS
=4.5V,I
D
=20A
V
GS
=10V,I
D
=20A
-
|V
DS
|>2|I
D
|R
DS(on)max
,I
D
=30A
Table5Dynamiccharacteristics
Parameter
Input capacitance
1)
Output capacitance
1)
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Symbol
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Values
Min.
-
-
-
-
-
-
-
Typ.
1600
510
33
4.3
3.0
18
2.4
Max.
2100
680
-
-
-
-
-
Unit
pF
pF
pF
ns
ns
ns
ns
Note/TestCondition
V
GS
=0V,V
DS
=15V,f=1MHz
V
GS
=0V,V
DS
=15V,f=1MHz
V
GS
=0V,V
DS
=15V,f=1MHz
V
DD
=15V,V
GS
=10V,I
D
=30A,
R
G
=1.6Ω
V
DD
=15V,V
GS
=10V,I
D
=30A,
R
G
=1.6Ω
V
DD
=15V,V
GS
=10V,I
D
=30A,
R
G
=1.6Ω
V
DD
=15V,V
GS
=10V,I
D
=30A,
R
G
=1.6Ω
Table6Gatechargecharacteristics
2)
Parameter
Gate to source charge
1)
Gate charge at threshold
1)
Gate to drain charge
1)
Switching charge
1)
Gate charge total
1)
Gate plateau voltage
Gate charge total
1)
Gate charge total, sync. FET
1)
Output charge
1)
Symbol
Q
gs
Q
g(th)
Q
gd
Q
sw
Q
g
V
plateau
Q
g
Q
g(sync)
Q
oss
Values
Min.
-
-
-
-
-
-
-
-
-
Typ.
5.0
2.5
2.3
4.8
9.9
3.2
21
8.6
13
Max.
6.7
3.4
3.8
7.2
13
-
27
11
18
Unit
nC
nC
nC
nC
nC
V
-
nC
-
Note/TestCondition
V
DD
=15V,I
D
=30A,V
GS
=0to4.5V
V
DD
=15V,I
D
=30A,V
GS
=0to4.5V
V
DD
=15V,I
D
=30A,V
GS
=0to4.5V
V
DD
=15V,I
D
=30A,V
GS
=0to4.5V
V
DD
=15V,I
D
=30A,V
GS
=0to4.5V
V
DD
=15V,I
D
=30A,V
GS
=0to4.5V
V
DD
=15V,I
D
=30A,V
GS
=0to10V
V
DS
=0.1V,V
GS
=0to4.5V
V
DD
=15V,V
GS
=0V
1)
2)
Defined by design. Not subject to production test
See
″Gate
charge waveforms″ for parameter definition
Final Data Sheet
4
Rev.2.1,2020-07-27
OptiMOSª3M-SeriesPower-MOSFET,30V
BSZ088N03MSG
Table7Reversediode
Parameter
Diode continuous forward current
Diode pulse current
Diode forward voltage
Reverse recovery charge
1)
Symbol
I
S
I
S,pulse
V
SD
Q
rr
Values
Min.
-
-
-
-
Typ.
-
-
0.87
-
Max.
31
200
1.1
10
Unit
A
A
V
nC
Note/TestCondition
T
C
=25°C
T
C
=25°C
V
GS
=0V,I
F
=20A,T
j
=25°C
V
R
=15V,I
F
=I
S
,di
F
/dt=400A/µs
1)
Defined by design. Not subject to production test
Final Data Sheet
5
Rev.2.1,2020-07-27
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