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MT41K128M16JT-107G:K

Description
IC DRAM 2G PARALLEL 96FBGA
Categorystorage    storage   
File Size16MB,221 Pages
ManufacturerMicron Technology
Websitehttp://www.mdtic.com.tw/
Environmental Compliance
Download Datasheet Parametric View All

MT41K128M16JT-107G:K Overview

IC DRAM 2G PARALLEL 96FBGA

MT41K128M16JT-107G:K Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerMicron Technology
package instructionTFBGA,
Reach Compliance Codecompliant
access modeMULTI BANK PAGE BURST
Other featuresAUTO/SELF REFRESH; ALSO OPERATES AT 1.5V NOMINAL SUPPLY
JESD-30 codeR-PBGA-B96
JESD-609 codee1
length14 mm
memory density2147483648 bit
Memory IC TypeDDR DRAM
memory width16
Number of functions1
Number of ports1
Number of terminals96
word count134217728 words
character code128000000
Operating modeSYNCHRONOUS
organize128MX16
Package body materialPLASTIC/EPOXY
encapsulated codeTFBGA
Package shapeRECTANGULAR
Package formGRID ARRAY, THIN PROFILE, FINE PITCH
Peak Reflow Temperature (Celsius)260
Maximum seat height1.2 mm
self refreshYES
Maximum supply voltage (Vsup)1.45 V
Minimum supply voltage (Vsup)1.283 V
Nominal supply voltage (Vsup)1.35 V
surface mountYES
technologyCMOS
Terminal surfaceTin/Silver/Copper (Sn/Ag/Cu)
Terminal formBALL
Terminal pitch0.8 mm
Terminal locationBOTTOM
Maximum time at peak reflow temperature30
width8 mm
2Gb: x4, x8, x16 DDR3L SDRAM
Description
DDR3L SDRAM
MT41K512M4 – 64 Meg x 4 x 8 banks
MT41K256M8 – 32 Meg x 8 x 8 banks
MT41K128M16 – 16 Meg x 16 x 8 banks
Description
The 1.35V DDR3L SDRAM device is a low-voltage ver-
sion of the 1.5V DDR3 SDRAM device. Refer to the
DDR3 (1.5V) SDRAM data sheet specifications when
running in 1.5V compatible mode.
Automatic self refresh (ASR)
Write leveling
Multipurpose register
Output driver calibration
Options
• Configuration
– 512 Meg x 4
– 256 Meg x 8
– 128 Meg x 16
• FBGA package (Pb-free) – x4, x8
– 78-ball (8mm x 10.5mm x 1.2mm)
Rev. K
• FBGA package (Pb-free) – x16
– 96-ball (8mm x 14mm x 1.2mm)
Rev. K
• Timing – cycle time
– 1.07ns @ CL = 13 (DDR3-1866)
– 1.25ns @ CL = 11 (DDR3-1600)
– 1.5ns @ CL = 9 (DDR3-1333)
– 1.875ns @ CL = 7 (DDR3-1066)
• Operating temperature
– Commercial (0°C
T
C
+95°C)
– Industrial (–40°C
T
C
+95°C)
• Revision
Marking
512M4
256M8
128M16
DA
JT
-107
-125
-15E
-187E
None
IT
:K
Features
V
DD
= V
DDQ
= 1.35V (1.283–1.45V)
Backward-compatible to V
DD
= V
DDQ
= 1.5V ±0.075V
Differential bidirectional data strobe
8n-bit prefetch architecture
Differential clock inputs (CK, CK#)
8 internal banks
Nominal and dynamic on-die termination (ODT)
for data, strobe, and mask signals
Programmable CAS (READ) latency (CL)
Programmable posted CAS additive latency (AL)
Programmable CAS (WRITE) latency (CWL)
Fixed burst length (BL) of 8 and burst chop (BC) of 4
(via the mode register set [MRS])
Selectable BC4 or BL8 on-the-fly (OTF)
Self refresh mode
T
C
of 95°C
– 64ms, 8192-cycle refresh up to 85°C
– 32ms, 8192-cycle refresh at >85°C to 95°C
Self refresh temperature (SRT)
Table 1: Key Timing Parameters
Speed Grade
-107
1, 2, 3
-125
1, 2
-15E
1
-187E
Notes:
Data Rate (MT/s)
1866
1600
1333
1066
Target
t
RCD-
t
RP-CL
13-13-13
11-11-11
9-9-9
7-7-7
t
RCD
(ns)
t
RP
(ns)
CL (ns)
13.91
13.75
13.5
13.1
13.91
13.75
13.5
13.1
13.91
13.75
13.5
13.1
1. Backward compatible to 1066, CL = 7 (-187E).
2. Backward compatible to 1333, CL = 9 (-15E).
3. Backward compatible to 1600, CL = 11 (-125).
CCMTD-1725822587-7895
2Gb_DDR3L.pdf - Rev. O 09/18 EN
1
Products and specifications discussed herein are subject to change by Micron without notice.
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2015 Micron Technology, Inc. All rights reserved.
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