UVPROM, 32KX8, 150ns, CMOS, CDIP28, CERAMIC, DIP-28
| Parameter Name | Attribute value |
| Is it Rohs certified? | incompatible |
| Maker | Waferscale Integration Inc. |
| package instruction | CERAMIC, DIP-28 |
| Reach Compliance Code | unknown |
| Is Samacsys | N |
| Maximum access time | 150 ns |
| I/O type | COMMON |
| JESD-30 code | R-GDIP-T28 |
| JESD-609 code | e0 |
| length | 37.085 mm |
| memory density | 262144 bit |
| Memory IC Type | UVPROM |
| memory width | 8 |
| Number of functions | 1 |
| Number of terminals | 28 |
| word count | 32768 words |
| character code | 32000 |
| Operating mode | ASYNCHRONOUS |
| Maximum operating temperature | 125 °C |
| Minimum operating temperature | -55 °C |
| organize | 32KX8 |
| Output characteristics | 3-STATE |
| Package body material | CERAMIC, GLASS-SEALED |
| encapsulated code | DIP |
| Encapsulate equivalent code | DIP28,.3 |
| Package shape | RECTANGULAR |
| Package form | IN-LINE |
| Parallel/Serial | PARALLEL |
| Peak Reflow Temperature (Celsius) | NOT SPECIFIED |
| power supply | 5 V |
| Programming voltage | 12.5 V |
| Certification status | Not Qualified |
| Filter level | MIL-STD-883 |
| Maximum seat height | 5.08 mm |
| Maximum standby current | 0.0003 A |
| Maximum slew rate | 0.05 mA |
| Maximum supply voltage (Vsup) | 5.5 V |
| Minimum supply voltage (Vsup) | 4.5 V |
| Nominal supply voltage (Vsup) | 5 V |
| surface mount | NO |
| technology | CMOS |
| Temperature level | MILITARY |
| Terminal surface | Tin/Lead (Sn/Pb) - hot dipped |
| Terminal form | THROUGH-HOLE |
| Terminal pitch | 2.54 mm |
| Terminal location | DUAL |
| Maximum time at peak reflow temperature | NOT SPECIFIED |
| width | 7.62 mm |
| Base Number Matches | 1 |
| 5962-8606305UA | 5962-8606305XA | 5962-8606301XA | 5962-8606306XA | 5962-8606306YX | 5962-8606305UX | 5962-8606306XX | 5962-8606306UA | |
|---|---|---|---|---|---|---|---|---|
| Description | UVPROM, 32KX8, 150ns, CMOS, CDIP28, CERAMIC, DIP-28 | UVPROM, 32KX8, 150ns, CMOS, CDIP28, CERAMIC, DIP-28 | UVPROM, 32KX8, 200ns, CMOS, CDIP28, 0.600 INCH, WINDOWED, CERDIP-28 | UVPROM, 32KX8, 120ns, CMOS, CDIP28, CERAMIC, DIP-28 | UVPROM, 32KX8, 120ns, CMOS, CQCC32, WINDOWED, CERAMIC, LLCC-32 | UVPROM, 32KX8, 150ns, CMOS, CDIP28, 0.300 INCH, WINDOWED, THIN, CERDIP-28 | UVPROM, 32KX8, 120ns, CMOS, CDIP28, 0.600 INCH, WINDOWED, CERDIP-28 | UVPROM, 32KX8, 120ns, CMOS, CDIP28, 0.300 INCH, WINDOWED, THIN, CERDIP-28 |
| package instruction | CERAMIC, DIP-28 | CERAMIC, DIP-28 | 0.600 INCH, WINDOWED, CERDIP-28 | CERAMIC, DIP-28 | WINDOWED, CERAMIC, LLCC-32 | 0.300 INCH, WINDOWED, THIN, CERDIP-28 | 0.600 INCH, WINDOWED, CERDIP-28 | 0.300 INCH, WINDOWED, THIN, CERDIP-28 |
| Reach Compliance Code | unknown | unknown | unknown | unknown | unknown | unknown | unknown | unknown |
| Maximum access time | 150 ns | 150 ns | 200 ns | 120 ns | 120 ns | 150 ns | 120 ns | 120 ns |
| JESD-30 code | R-GDIP-T28 | R-GDIP-T28 | R-GDIP-T28 | R-GDIP-T28 | R-CQCC-N32 | R-GDIP-T28 | R-GDIP-T28 | R-GDIP-T28 |
| length | 37.085 mm | 37.215 mm | 37.215 mm | 37.215 mm | 13.97 mm | 37.085 mm | 37.215 mm | 37.085 mm |
| memory density | 262144 bit | 262144 bit | 262144 bit | 262144 bit | 262144 bit | 262144 bit | 262144 bit | 262144 bit |
| Memory IC Type | UVPROM | UVPROM | UVPROM | UVPROM | UVPROM | UVPROM | UVPROM | UVPROM |
| memory width | 8 | 8 | 8 | 8 | 8 | 8 | 8 | 8 |
| Number of functions | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 |
| Number of terminals | 28 | 28 | 28 | 28 | 32 | 28 | 28 | 28 |
| word count | 32768 words | 32768 words | 32768 words | 32768 words | 32768 words | 32768 words | 32768 words | 32768 words |
| character code | 32000 | 32000 | 32000 | 32000 | 32000 | 32000 | 32000 | 32000 |
| Operating mode | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS |
| Maximum operating temperature | 125 °C | 125 °C | 125 °C | 125 °C | 125 °C | 125 °C | 125 °C | 125 °C |
| Minimum operating temperature | -55 °C | -55 °C | -55 °C | -55 °C | -55 °C | -55 °C | -55 °C | -55 °C |
| organize | 32KX8 | 32KX8 | 32KX8 | 32KX8 | 32KX8 | 32KX8 | 32KX8 | 32KX8 |
| Package body material | CERAMIC, GLASS-SEALED | CERAMIC, GLASS-SEALED | CERAMIC, GLASS-SEALED | CERAMIC, GLASS-SEALED | CERAMIC, METAL-SEALED COFIRED | CERAMIC, GLASS-SEALED | CERAMIC, GLASS-SEALED | CERAMIC, GLASS-SEALED |
| encapsulated code | DIP | DIP | WDIP | DIP | WQCCN | WDIP | WDIP | WDIP |
| Package shape | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| Package form | IN-LINE | IN-LINE | IN-LINE, WINDOW | IN-LINE | CHIP CARRIER, WINDOW | IN-LINE, WINDOW | IN-LINE, WINDOW | IN-LINE, WINDOW |
| Parallel/Serial | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL |
| Certification status | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| Maximum seat height | 5.08 mm | 5.72 mm | 5.72 mm | 5.72 mm | 3.3 mm | 5.08 mm | 5.72 mm | 5.08 mm |
| Maximum supply voltage (Vsup) | 5.5 V | 5.5 V | 5.5 V | 5.5 V | 5.5 V | 5.5 V | 5.5 V | 5.5 V |
| Minimum supply voltage (Vsup) | 4.5 V | 4.5 V | 4.5 V | 4.5 V | 4.5 V | 4.5 V | 4.5 V | 4.5 V |
| Nominal supply voltage (Vsup) | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V |
| surface mount | NO | NO | NO | NO | YES | NO | NO | NO |
| technology | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS |
| Temperature level | MILITARY | MILITARY | MILITARY | MILITARY | MILITARY | MILITARY | MILITARY | MILITARY |
| Terminal form | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | NO LEAD | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE |
| Terminal pitch | 2.54 mm | 2.54 mm | 2.54 mm | 2.54 mm | 1.27 mm | 2.54 mm | 2.54 mm | 2.54 mm |
| Terminal location | DUAL | DUAL | DUAL | DUAL | QUAD | DUAL | DUAL | DUAL |
| width | 7.62 mm | 15.24 mm | 15.24 mm | 15.24 mm | 11.43 mm | 7.62 mm | 15.24 mm | 7.62 mm |
| Base Number Matches | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 |
| Maker | Waferscale Integration Inc. | - | - | Waferscale Integration Inc. | Waferscale Integration Inc. | Waferscale Integration Inc. | Waferscale Integration Inc. | Waferscale Integration Inc. |
| JESD-609 code | e0 | e0 | e0 | e0 | - | - | - | e0 |
| Output characteristics | 3-STATE | 3-STATE | 3-STATE | 3-STATE | - | - | - | 3-STATE |
| Terminal surface | Tin/Lead (Sn/Pb) - hot dipped | Tin/Lead (Sn/Pb) - hot dipped | TIN LEAD | Tin/Lead (Sn/Pb) - hot dipped | - | - | - | TIN LEAD |