IRFR010, SiHFR010
www.vishay.com
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
V
DS
(V)
R
DS(on)
()
Q
g
(Max.) (nC)
Q
gs
(nC)
Q
gd
(nC)
Configuration
V
GS
= 10 V
10
2.6
4.8
Single
D
FEATURES
50
0.20
•
•
•
•
•
•
Low Drive Current
Surface Mount
Fast Switching
Ease of Paralleling
Excellent Temperature Stability
Material categorization: For definitions of compliance
please see
www.vishay.com/doc?99912
DESCRIPTION
The power MOSFET technology is the key to Vishay’s
advanced line of power MOSFET transistors. The efficient
geometry and unique processing of this latest “State of the
Art” design achieves: very low on-state resistance
combined with high transconductance; superior reverse
energy and diode recovery dV/dt capability.
The power MOSFET transistors also feature all of the well
established advantages of MOSFET’S such as voltage
control, very fast switching, ease of paralleling and
temperature stability of the electrical parameters.
Surface mount packages enhance circuit performance by
reducing stray inductances and capacitance. The DPAK
(TO-252) surface mount package brings the advantages of
power MOSFET’s to high volume applications where PC
Board surface mounting is desirable. The surface mount
option IRFR9012, SiHFR9012 is provided on 16 mm tape.
The straight lead option IRFU9012, SiHFU9012 of the device
is called the IPAK (TO-251).
They are well suited for applications where limited heat
dissipation is required such as, computers and peripherals,
telecommunication equipment, dc-to-dc converters, and a
wide range of consumer products.
DPAK
(TO-252)
D
G
G
S
S
N-Channel MOSFET
ORDERING INFORMATION
Package
Lead (Pb)-free
DPAK (TO-252)
IRFR010PbF
SiHFR010-E3
ABSOLUTE MAXIMUM RATINGS
(T
C
= 25 °C, unless otherwise noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain
Current
a
V
GS
at 10 V
T
C
= 25 °C
T
C
= 100 °C
SYMBOL
V
DS
V
GS
I
D
I
DM
I
AS
T
C
= 25 °C
P
D
dV/dt
T
J
, T
stg
Temperature)
d
LIMIT
50
± 20
8.2
5.2
33
1.5
0.20
25
2.0
- 55 to + 150
300
W/°C
W
V/ns
°C
A
UNIT
V
Avalanche Current
b
Linear Derating Factor
Maximum Power Dissipation
Peak Diode Recovery
dV/dt
c
Operating Junction and Storage Temperature Range
for 10 s
Soldering Recommendations (Peak
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V
DD
= 25 V, starting T
J
= 25 °C, L = 100 μH, R
g
= 25
.
c. I
SD
8.2 A, dI/dt
130 A/μs, V
DD
40 V, T
J
150 °C.
d. 1.6 mm from case.
e. When mounted on 1" square PCB (FR-4 or G-10 material).
S13-0167-Rev. B, 04-Feb-13
Document Number: 91420
1
For technical questions, contact:
hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
IRFR010, SiHFR010
www.vishay.com
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum Junction-to-Ambient
Case-to-Sink
Maximum Junction-to-Case (Drain)
SYMBOL
R
thJA
R
thCS
R
thJC
MIN.
-
-
-
TYP.
-
1.7
-
MAX.
110
-
5.0
°C/W
UNIT
SPECIFICATIONS
(T
J
= 25 °C, unless otherwise noted)
PARAMETER
Static
Drain-Source Breakdown Voltage
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulsed Diode Forward
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Forward Turn-On Time
Current
a
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
MOSFET symbol
showing the
integral reverse
p - n junction diode
D
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
DS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
g
fs
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
V
GS
= 0 V, I
D
= 250 μA
V
DS
= V
GS
, I
D
= 250 μA
V
GS
= ± 20 V
V
DS
= 50 V, V
GS
= 0 V
V
DS
= 40 V, V
GS
= 0 V, T
J
= 125 °C
V
GS
= 10 V
I
D
= 4.6 A
b
V
DS
50 V, I
D
= 3.6 A
50
2.0
-
-
-
-
2.1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
0.16
3.1
250
150
29
6.7
1.8
3.2
11
33
12
23
4.5
7.5
-
4.0
± 500
250
1000
0.20
-
-
-
-
10
2.6
4.8
17
50
18
35
-
V
V
nA
μA
S
V
GS
= 0 V,
V
DS
= 25 V,
f = 1.0 MHz, see fig. 10
I
D
= 7.3 A, V
DS
= 40 V,
see fig. 6 and 13
b
pF
V
GS
= 10 V
nC
V
DD
= 25 V, I
D
= 7.3 A,
R
g
= 24
,
R
D
= 3.3
,
see fig. 10
b
ns
Between lead,
6 mm (0.25") from
package and center of
die contact
c
D
-
G
nH
-
S
-
-
-
-
41
0.15
-
-
-
86
0.33
8.2
A
33
1.6
190
0.78
V
ns
μC
G
S
T
J
= 25 °C, I
S
= 8.2 A, V
GS
= 0 V
b
T
J
= 25 °C, I
F
= 7.3 A, dI/dt = 100 A/μs
b
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
and L
D
)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width
300 μs; duty cycle
2 %.
S13-0167-Rev. B, 04-Feb-13
Document Number: 91420
2
For technical questions, contact:
hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
IRFR010, SiHFR010
www.vishay.com
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
Vishay Siliconix
Fig. 1 - Typical Output Characteristics
Fig. 3 - Typical Transfer Characteristics
Fig. 2 - Typical Output Characteristics
Fig. 4 - Normalized On-Resistance vs. Temperature
S13-0167-Rev. B, 04-Feb-13
Document Number: 91420
3
For technical questions, contact:
hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
IRFR010, SiHFR010
www.vishay.com
Vishay Siliconix
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
Fig. 7 - Typical Source-Drain Diode Forward Voltage
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
Fig. 8 - Maximum Safe Operating Area
S13-0167-Rev. B, 04-Feb-13
Document Number: 91420
4
For technical questions, contact:
hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
IRFR010, SiHFR010
www.vishay.com
Vishay Siliconix
R
D
V
DS
V
GS
R
G
D.U.T.
+
- V
DD
10 V
Pulse width
≤
1 µs
Duty factor
≤
0.1 %
Fig. 10a - Switching Time Test Circuit
V
DS
90 %
Fig. 9 - Maximum Drain Current vs. Case Temperature
10 %
V
GS
t
d(on)
t
r
t
d(off)
t
f
Fig. 10b - Switching Time Waveforms
Fig. 10 - Breakdown Voltage vs. Temperature
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
S13-0167-Rev. B, 04-Feb-13
Document Number: 91420
5
For technical questions, contact:
hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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