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SSM6J414TU,LF

Description
MOSFET P CH 20V 6A UF6
Categorysemiconductor    Discrete semiconductor   
File Size215KB,9 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
Environmental Compliance
Download Datasheet Parametric View All

SSM6J414TU,LF Overview

MOSFET P CH 20V 6A UF6

SSM6J414TU,LF Parametric

Parameter NameAttribute value
FET typeP channel
technologyMOSFET (metal oxide)
Drain-source voltage (Vdss)20V
Current - Continuous Drain (Id) at 25°C6A(Ta)
Drive voltage (maximum Rds On, minimum Rds On)1.5V,4.5V
Rds On (maximum value) when different Id, Vgs22.5 milliohms @ 6A, 4.5V
Vgs (th) (maximum value) when different Id1V @ 1mA
Gate charge (Qg) at different Vgs (maximum value)23.1nC @ 4.5V
Vgs (maximum value)±8V
Input capacitance (Ciss) at different Vds (maximum value)1650pF @ 10V
FET function-
Power dissipation (maximum)1W(Ta)
Operating temperature150°C(TJ)
Installation typesurface mount
Supplier device packagingUF6
Package/casing6-SMD, flat leads
SSM6J414TU
MOSFETs
Silicon P-Channel MOS (U-MOS)
SSM6J414TU
1. Applications
Power Management Switches
2. Features
(1)
(2)
1.5-V gate drive voltage.
Low drain-source on-resistance
: R
DS(ON)
= 54 mΩ (max) (@V
GS
= -1.5 V)
R
DS(ON)
= 36 mΩ (max) (@V
GS
= -1.8 V)
R
DS(ON)
= 26 mΩ (max) (@V
GS
= -2.5 V)
R
DS(ON)
= 22.5 mΩ (max) (@V
GS
= -4.5 V)
3. Packaging and Pin Configuration
1, 2, 5, 6: Drain
3: Gate
4: Source
UF6
Start of commercial production
1
2012-06
2014-04-04
Rev.4.0
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