Advance Technical Information
High Voltage
XPT
TM
IGBT
IXYX40N250CHV
V
CES
=
I
C110
=
V
CE(sat)
t
fi(typ)
=
2500V
40A
4.0V
134ns
Symbol
V
CES
V
CGR
V
GES
V
GEM
I
C25
I
C110
I
CM
SSOA
(RBSOA)
P
C
T
J
T
JM
T
stg
T
L
T
SOLD
F
C
Weight
Test Conditions
T
J
= 25°C to 175°C
T
J
= 25°C to 175°C, R
GE
= 1M
Continuous
Transient
T
C
= 25°C
T
C
= 110°C
T
C
= 25°C, 1ms
V
GE
= 15V, T
VJ
= 150°C, R
G
= 1
Clamped Inductive Load
T
C
= 25°C
Maximum Ratings
2500
2500
±20
±30
154
40
370
I
CM
= 80
1500
1500
-55 ... +175
175
-55 ... +175
V
V
V
V
A
A
A
A
V
W
°C
°C
°C
°C
°C
N/lb
g
TO-247PLUS-HV
G
E
C
Tab
G = Gate
C = Collector
E
= Emitter
Tab = Collector
Features
Maximum Lead Temperature for Soldering
1.6 mm (0.062in.) from Case for 10s
Mounting Force
300
260
20..120/4.5..27
6
High Voltage Package
High Blocking Voltage
High Peak Current Capability
Low Saturation Voltage
Advantages
Low Gate Drive Requirement
High Power Density
Symbol
Test Conditions
(T
J
= 25C, Unless Otherwise Specified)
BV
CES
V
GE(th)
I
CES
I
GES
V
CE(sat)
I
C
I
C
= 250μA, V
GE
= 0V
= 250μA, V
CE
= V
GE
T
J
= 150°C
V
CE
= 0V, V
GE
= ±20V
I
C
= 40A, V
GE
= 15V, Note 1
T
J
= 150°C
Characteristic Values
Min.
Typ.
Max.
2500
3.0
5.0
V
V
Applications
UPS
Motor Drives
SMPS
PFC Circuits
High Frequency Power Inverters
V
CE
= V
CES
, V
GE
= 0V
15
μA
4 mA
±100
3.2
4.4
4.0
nA
V
V
© 2017 IXYS CORPORATION, All Rights Reserved
DS100814B(5/17)
IXYX40N250CHV
Symbol Test Conditions
(T
J
= 25°C Unless Otherwise Specified)
g
fs
R
Gi
C
ies
C
oes
C
res
Q
g(on)
Q
ge
Q
gc
t
d(on)
t
ri
E
on
t
d(off)
t
fi
E
off
t
d(on)
t
ri
E
on
t
d(off)
t
fi
E
off
R
thJC
R
thCS
I
C
= 40A, V
CE
= 10V, Note 1
Gate Input Resistance
V
CE
= 25V, V
GE
= 0V, f = 1MHz
Characteristic Values
Min.
Typ.
Max.
24
42
2.0
5470
204
74
270
28
110
21
22
11.7
200
134
6.9
21
22
14.7
255
250
11.5
0.15
S
pF
pF
pF
nC
nC
nC
ns
ns
mJ
ns
ns
mJ
ns
ns
mJ
ns
ns
mJ
0.10 °C/W
°C/W
1 - Gate
2 - Emitter
3,4 - Collector
TO-247PLUS-HV Outline
I
C
= 40A, V
GE
= 15V, V
CE
= 0.5 • V
CES
Inductive load, T
J
= 25°C
I
C
= 40A, V
GE
= 15V
V
CE
= 0.5 • V
CES
, R
G
= 1
Note 2
Inductive load, T
J
= 150°C
I
C
= 40A, V
GE
= 15V
V
CE
= 0.5 • V
CES
, R
G
= 1
Note 2
Notes:
1. Pulse test, t
300μs, duty cycle, d
2%.
2. Switching times & energy losses may increase for higher V
CE
(Clamp), T
J
or R
G
.
ADVANCE TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are
derived from a subjective evaluation of the design, based upon prior knowledge and experi-
ence, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
4,835,592
by one or more of the following U.S. patents: 4,860,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,727,585
7,005,734 B2
6,710,405 B2 6,759,692
7,063,975 B2
6,710,463
6,771,478 B2 7,071,537
7,157,338B2
IXYX40N250CHV
Fig. 1. Output Characteristics @ T
J
= 25
o
C
80
70
60
V
GE
= 15V
10V
8V
7V
500
6V
400
5V
V
GE
= 15V
14V
13V
12V
11V
10V
Fig. 2. Extended Output Characteristics @ T
J
= 25 C
o
I
C
- Amperes
I
C
-
Amperes
50
40
30
20
10
0
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
300
9V
8V
200
4V
100
3V
0
5
0
5
10
15
20
25
30
7V
6V
5V
4V
V
CE
- Volts
o
V
CE
- Volts
Fig. 3. Output Characteristics @ T
J
= 150 C
80
70
60
V
GE
= 15V
12V
10V
8V
7V
6V
2.2
2.0
1.8
V
GE
= 15V
Fig. 4. Dependence of V
CE(sat)
on
Junction Temperature
I
C
= 80A
V
CE(sat)
- Normalized
5V
I
C
- Amperes
50
40
30
4V
20
10
3V
0
0
1
2
3
4
5
6
7
8
1.6
1.4
1.2
1.0
I
C
= 20A
0.8
0.6
0.4
-50
-25
0
25
50
75
100
125
150
175
I
C
= 40A
V
CE
- Volts
T
J
- Degrees Centigrade
7
Fig. 5. Collector-to-Emitter Voltage vs.
Gate-to-Emitter Voltage
T
J
= 25 C
o
Fig. 6. Input Admittance
140
120
100
6
V
CE
- Volts
5
I
C
-
Amperes
I
C
= 80A
80
60
40
20
T
J
= 150 C
25 C
- 40 C
o
o
o
4
40A
3
20A
2
3
4
5
6
7
8
9
10
11
12
13
14
15
0
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
V
GE
- Volts
V
GE
- Volts
© 2017 IXYS CORPORATION, All Rights Reserved
IXYX40N250CHV
Fig. 7. Transconductance
90
80
70
60
50
40
30
20
10
0
0
20
40
60
80
100
120
140
160
150 C
o
Fig. 8. Gate Charge
16
V
CE
= 1250V
I
C
= 40A
I
G
= 10mA
T
J
= - 40 C
o
14
12
g
f s
-
Siemens
25 C
o
V
GE
- Volts
10
8
6
4
2
0
0
40
80
120
160
200
240
280
I
C
- Amperes
Q
G
- NanoCoulombs
Fig. 9. Capacitance
10,000
90
80
Cies
Fig. 10. Reverse-Bias Safe Operating Area
Capacitance - PicoFarads
70
60
1,000
I
C
- Amperes
50
40
30
Coes
100
Cres
20
10
0
T
J
= 150 C
R
G
= 1
Ω
dv / dt < 10V / ns
500
750
o
f
= 1 MHz
10
1
0
Fig. 11. Maximum Transient Thermal Impedance
5
10
15
20
25
30
35
40
250
1000
1250
1500
1750
2000
2250
2500
V
CE
- Volts
V
CE
- Volts
Fig. 11. Maximum Transient Thermal Impedance
0.2
0.1
aaaaa
Z
(th)JC
- K / W
0.01
0.001
0.00001
0.0001
0.001
0.01
0.1
1
Pulse Width - Second
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYX40N250CHV
40
35
30
Fig. 12. Inductive Switching Energy Loss vs.
Gate Resistance
E
off
o
40
35
30
28
24
20
Fig. 13. Inductive Switching Energy Loss vs.
Collector Current
E
off
V
CE
= 1250V
E
on
35
30
25
E
on
T
J
= 150 C , V
GE
= 15V
V
CE
= 1250V
I
C
= 80A
R
G
= 1
Ω
V
GE
= 15V
E
off
- MilliJoules
E
off
- MilliJoules
E
on
- MilliJoules
E
on
- MilliJoules
25
20
15
10
5
0
1
2
3
4
5
6
25
20
15
10
5
0
16
12
8
T
J
= 150 C
o
20
15
10
I
C
= 40A
T
J
= 25 C
4
0
20
30
40
50
60
70
80
5
0
o
7
8
9
10
R
G
- Ohms
I
C
- Amperes
36
32
28
Fig. 14. Inductive Switching Energy Loss vs.
Junction Temperature
E
off
V
CE
= 1250V
E
on
I
C
= 80A
36
32
28
400
350
300
Fig. 15. Inductive Turn-off Switching Times vs.
Gate Resistance
t
fi
o
600
540
480
420
t
d(off)
R
G
= 1
Ω
V
GE
= 15V
T
J
= 150 C, V
GE
= 15V
V
CE
= 1250V
t
d(off)
- Nanoseconds
t
f i
- Nanoseconds
E
off
- MilliJoules
24
20
16
12
8
4
0
25
50
75
100
125
I
C
= 40A
24
20
16
12
8
4
0
150
E
on
- MilliJoules
250
200
150
100
50
1
2
3
4
5
6
7
8
9
10
I
C
= 40A
I
C
= 80A
360
300
240
180
T
J
- Degrees Centigrade
R
G
- Ohms
350
Fig. 16. Inductive Turn-off Switching Times vs.
Collector Current
t
fi
t
d(off)
360
350
Fig. 17. Inductive Turn-off Switching Times vs.
Junction Temperature
t
fi
t
d(off)
360
300
R
G
= 1
Ω
, V
GE
= 15V
V
CE
= 1250V
320
300
R
G
= 1
Ω
, V
GE
= 15V
V
CE
= 1250V
320
t
d(off)
- Nanoseconds
t
d(off)
- Nanoseconds
t
f i
- Nanoseconds
t
f i
- Nanoseconds
250
T
J
= 150 C
o
280
250
I
C
= 40A
280
200
240
200
I
C
= 80A
150
240
150
T
J
= 25 C
100
o
200
200
160
100
160
50
20
30
40
50
60
70
80
120
50
25
50
75
100
125
120
150
I
C
- Amperes
T
J
- Degrees Centigrade
© 2017 IXYS CORPORATION, All Rights Reserved
MCU
京公网安备 11010802033920号
EEWORLD
