Bulletin I27134 rev. B 09/97
IRKU/V41, 56 SERIES
THYRISTOR/ THYRISTOR
Features
Electrically isolated: DBC base plate
3500 V
RMS
isolating voltage
Standard JEDEC package
Simplified mechanical designs, rapid assembly
Auxiliary cathode terminals for wiring convenience
High surge capability
Wide choice of circuit configurations
Large creepage distances
UL E78996 approved
NEW ADD-A-pak
TM
Power Modules
45 A
60 A
Description
These IRKU/V series of NEW ADD-A-paks use
power thyristors in two circuit configurations. The
semiconductor chips are electrically isolated from
the base plate, allowing common heatsinks and
compact assemblies to be built. They can be
interconnected to form single phase bridges
(IRKU+IRKV) or 6-pulse midpoint connection
bridge. These modules are intended for general
purpose high voltage applications such as high
voltage regulated power supplies, battery charge
and DC motor speed control circuits.
Major Ratings and Characteristics
Parameters
I
T(AV)
@ 85°C
I
T(RMS)
I
TSM
@ 50Hz
@ 60Hz
I
2
t
@ 50Hz
@ 60Hz
I
2
√t
V
RRM
range
T
STG
T
J
IRKU/V41
45
70
850
890
3.61
3.30
36.1
IRKU/V56
60
95
1310
1370
8.50
7.82
85.0
Units
A
A
A
A
KA
2
s
KA
2
s
KA
2
√s
V
o
400 to 1600
- 40 to 125
- 40 to125
C
C
o
www.irf.com
1
IRKU/V41, 56 Series
Bulletin I27134 rev. B 09/97
ELECTRICAL SPECIFICATIONS
Voltage Ratings
Type number
Voltage
Code
-
04
IRKU/V41, 56
08
12
16
V
RRM
, maximum
repetitive
peak reverse voltage
V
400
800
1200
1600
V
RSM
, maximum
V
DRM
, max. repetitive I
RRM
non-repetitive
peak off-state voltage, I
DRM
peak reverse voltage
gate open circuit
125°C
V
500
900
1300
1700
V
400
800
1200
1600
mA
15
On-state Conduction
Parameters
I
T(AV)
Max. average on-state
current
I
T(RMS
)
Max. RMS on-state
current
I
TSM
@ T
C
Max. peak, one cycle
non-repetitive on-state
current
70
82
850
890
715
750
940
985
I
2
t
Max. I
2
t for fusing
3.61
3.30
2.56
2.33
4.42
4.03
I
√t
2
IRKU/V41
45
IRKU/V56
60
Units
Conditions
180
o
conduction, half sine wave,
T
C
= 85
o
C
DC
A
95
80
1310
1370
1100
1150
1450
1520
8.56
7.82
6.05
5.53
10.05
9.60
85.6
0.85
0.88
3.53
3.41
1.54
KA
√s
2
°C
t=10ms No voltage
t=8.3ms reapplied
A
t=10ms 100% V
RRM
t=8.3ms reapplied
t=10ms T
J
= 25
o
C,
t=8.3ms no voltage reapplied
t=10ms No voltage
t=8.3ms reapplied
KA s
2
Sinusoidal
half wave,
Initial T
J
= T
J
max.
t=10ms 100% V
RRM
t=8.3ms reapplied
t=10ms T
J
= 25
o
C,
Initial T
J
= T
J
max.
t=8.3ms no voltage reapplied
t=0.1 to 10ms, no voltage reapplied
Low level (3)
High level (4)
Low level (3)
High level (4)
I
TM
=
π
x I
T(AV)
I
FM
=
π
x I
F(AV)
T
J
= T
J
max
T
J
= T
J
max
T
J
= 25°C
Max. I
√t
for fusing (1)
2
36.1
0.88
0.91
5.90
5.74
1.81
V
T(TO)
Max. value of threshold
voltage (2)
r
t
V
TM
di/dt
Max. value of on-state
slope resistance (2)
Max. peak on-state
voltage
Max. non-repetitive rate
of rise of turned on
current
I
H
I
L
Max. holding current
Max. latching current
V
mΩ
V
T
J
= 25
o
C, from 0.67 V
DRM
,
150
200
mA
400
A/µs
I
TM
=π x I
T(AV)
,
I = 500mA,
g
t < 0.5 µs, t > 6 µs
r
p
T
J
= 25
o
C, anode supply = 6V,
resistive load, gate open circuit
T
J
= 25
o
C, anode supply = 6V,resistive load
(1) I
2
t for time t = I
2
√t
x
√t
.
x
x
(3) 16.7%
x
π
x I
AV
< I <
π
x I
AV
(2) Average power =
V
T(TO)
x I
T(AV)
+
r
t
x
(
I
T(RMS)
)
2
(4)
I >
π
x I
AV
2
www.irf.com
IRKU/V41, 56 Series
Bulletin I27134 rev. B 09/97
Triggering
Parameters
P
GM
I
GM
Max. peak gate power
IRKU/V41
10
2.5
2.5
10
4.0
2.5
1.7
270
150
80
IRKU/V56
10
2.5
2.5
Units
W
A
Conditions
P
G(AV)
Max. average gate power
Max. peak gate current
gate voltage
V
GT
Max. gate voltage
required to trigger
I
GT
Max. gate current
required to trigger
V
GD
I
GD
Max. gate voltage
that will not trigger
Max. gate current
that will not trigger
-V
GM
Max. peak negative
V
T
J
= - 40°C
T
J
= 25°C
T
J
= 125°C
T
J
= - 40°C
Anode supply = 6V
resistive load
Anode supply = 6V
resistive load
mA
T
J
= 25°C
T
J
= 125°C
0.25
6
V
mA
T
J
= 125
o
C,
rated V
DRM
applied
T
J
= 125
o
C,
rated V
DRM
applied
Blocking
Parameters
I
RRM
I
DRM
V
INS
Max. peak reverse and
off-state leakage current
at V
RRM
, V
DRM
RMS isolation voltage
2500 (1 min)
3500 (1 sec)
dv/dt Max. critical rate of rise
of off-state voltage (5)
500
V
50 Hz, circuit to base, all terminals
shorted
T
J
= 125
o
C, linear to 0.67 V
DRM
,
gate open circuit
15
mA
T
J
= 125
o
C, gate open circuit
IRKU/V41, 56
Units
Conditions
V/µs
Thermal and Mechanical Specifications
Parameters
T
J
T
stg
Junction operating
temperature range
Storage temper. range
IRKU/V41
IRKU/V56
Units
Conditions
- 40 to 125
- 40 to 125
°C
R
thJC
Max. internal thermal
resistance, junction
to case
R
thCS
Typical thermal resistance
case to heatsink
T
Mounting torque ± 10%
to heatsink
busbar
wt
Approximate weight
Case style
0.1
5
Nm
3
83 (3)
TO-240AA
g (oz)
JEDEC
0.23
0.20
K/W
Mounting surface flat, smooth and greased.
Flatness < 0.03 mm; roughness
<
0.02 mm
A mounting compound is recommended
and the torque should be rechecked after
a period of 3 hours to allow for the spread
of the compound
Per module, DC operation
(5) Available with dv/dt = 1000V/µs, to complete code add S90 i.e. IRKU41/16S90.
www.irf.com
3
IRKU/V41, 56 Series
Bulletin I27134 rev. B 09/97
∆R
Conduction (per Junction)
(The following table shows the increment of thermal resistance R
thJC
when devices operate at different conduction angles than DC)
Devices
IRKU/V41
IRKU/V56
Sine half wave conduction
180
o
0.11
0.09
120
o
0.13
0.11
90
o
0.17
0.13
60
o
0.23
0.18
30
o
0.34
0.27
180
o
0.09
0.07
Rect. wave conduction
120
o
0.14
0.11
90
o
0.18
0.14
60
o
0.23
0.19
30
o
0.34
Units
°C/W
0.28
Outlines Table
IRKU../.. (*)
IRKV../.. (*)
30 ± 0.5
(1.18 ± 0.02)
Screws M5 x 0.8
18 REF.
(0.71)
15.5 ± 0.5
(0.61 ± 0.02)
Faston tab. 2.8 x 0.8
(0.11 x 0.03)
(1.18 ± 0.04)
30 ± 0.1
29 ± 0.5
(1.13 ± 0.02)
6.3 ± 0.3
(0.25 ± 0.01)
All dimensions in millimeters (inches)
(0.24 ± 0.01)
24 ± 0.5
5.8 ± 0.25
(0.94 ± 0.02)
(0.23 ± 0.01)
6.1 ± 0.3
20.5 ± 0.75
(0.81 ± 0.03)
1
20 ± 0.5
(0.79 ± 0.02)
20 ± 0.5
(0.79 ± 0.02)
15 ± 0.5
80 ± 0.3
(0.59 ± 0.02)
(3.15 ± 0.01)
92 ± 0.5
(3.62 ± 0.02)
(*)
For terminals connections, see Circuit Configurations Table
Circuit Configurations Table
IRKU
(1)
+
4 5
IRKV
(1)
-
(2)
-
+
(2)
-
(3)
G1
K1
(4) (5)
K2
G2
(7) (6)
+
(3)
G1 K1
K2 G2
(4) (5)
(7) (6)
NOTE: To order the Optional Hardware see Bulletin I27900
4
www.irf.com
Pitch 4.0 ± 0.2
(0.16 ± 0.01)
2
3
76
IRKU/V41, 56 Series
Bulletin I27134 rev. B 09/97
Ordering Information Table
Device Code
IRK
1
U
2
56
3
/
16 S90
4
5
1
2
3
4
5
-
-
-
-
-
Module type
Circuit configuration (See Circuit Configuration Table)
Current code
Voltage code (See Voltage Ratings Table)
dv/dt code:
S90 = dv/dt 1000 V/µs
No letter = dv/dt 500 Vµs
Maximum Allowable Case Temperature (°C)
130
IRK.41.. Series
R
(DC) = 0.46 K/W
thJC
Maximum Allowable Case Temperature (°C)
130
IRK.41.. Series
R
thJC
(DC) = 0.46 K/W
120
120
110
110
Conduction Period
Conduction Angle
100
30°
90
60°
90°
120°
180°
100
30°
60°
90°
120°
180°
DC
90
80
0
10
20
30
40
50
Average On-state Current (A)
80
0
20
40
60
80
Average On-state Current (A)
Fig. 1 - Current Ratings Characteristics
Maximum Average On-state Power Loss (W)
70
60
50
40
30
Conduction Angle
Fig. 2 - Current Ratings Characteristics
100
DC
180°
120°
90°
60°
30°
Maximum Average On-state Power Loss (W)
180°
120°
90°
60°
30°
80
RMS Limit
60
RMS Limit
40
Conduction Period
20
10
0
0
10
20
30
40
50
Average On-state Current (A)
IRK.41.. Series
Per Junct ion
T
J
= 125°C
20
IRK.41.. Series
Per Junction
T
J
= 125°C
0
20
40
60
80
0
Average On-state Current (A)
Fig. 3 - On-state Power Loss Characteristics
Fig. 4 - On-state Power Loss Characteristics
www.irf.com
5
MCU
京公网安备 11010802033920号
EEWORLD
