PD - 94363C
IRF6602/IRF6602TR1
HEXFET
®
Power MOSFET
V
DSS
l
Application Specific MOSFETs
l
Ideal for CPU Core DC-DC Converters
l
Low Conduction Losses
l
Low Switching Losses
l
Low Profile (<0.7 mm)
l
Dual Sided Cooling Compatible
l
Compatible with existing Surface Mount Techniques
R
DS(on)
max
13mΩ@V
GS
= 10V
19mΩ@V
GS
= 4.5V
Qg
12nC
20V
MQ
Applicable DirectFET Package/Layout Pad (see p.9, 10 for details)
SQ
SX
ST
MQ
MX
MT
DirectFET ISOMETRIC
Description
The IRF6602 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET
TM
packaging to
achieve the lowest on-state resistance charge product in a package that has the footprint of an SO-8 and only 0.7 mm profile.
The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment
and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the
manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in
power systems, IMPROVING previous best thermal resistance by 80%.
The IRF6602 balances both low resistance and low charge along with ultra low package inductance to reduce both conduction
and switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the
latest generation of processors operating at higher frequencies. The IRF6602 has been optimized for parameters that are
critical in synchronous buck converters including Rds(on) and gate charge to minimize losses in the control FET socket.
Absolute Maximum Ratings
Parameter
V
DS
V
GS
I
D
@ T
C
= 25°C
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
DM
P
D
@T
A
= 25°C
P
D
@T
A
= 70°C
P
D
@T
C
= 25°C
T
J
T
STG
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Max.
20
±20
48
11
8.9
89
2.3
1.5
42
0.018
-40 to + 150
Units
V
g
Power Dissipation
g
Power Dissipation
Power Dissipation
c
A
W
Linear Derating Factor
Operating Junction and
Storage Temperature Range
W/°C
°C
Thermal Resistance
R
θJA
R
θJA
R
θJA
R
θJC
R
θJ-PCB
Junction-to-Ambient
Junction-to-Ambient
Junction-to-Ambient
Junction-to-Case
Parameter
i
f
g
h
Typ.
–––
12.5
20
–––
1.0
Max.
55
–––
–––
3.0
–––
Units
°C/W
Junction-to-PCB Mounted
Notes
through
are on page 11
www.irf.com
1
03/29/05
IRF6602/IRF6602TR1
Static @ T
J
= 25°C (unless otherwise specified)
Parameter
BV
DSS
∆ΒV
DSS
/∆T
J
R
DS(on)
V
GS(th)
∆V
GS(th)
I
DSS
I
GSS
gfs
Q
g
Q
gs1
Q
gs2
Q
gd
Q
godr
Q
sw
Q
oss
R
G
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Q
gs2
+ Q
gd
)
Output Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Parameter
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Min. Typ. Max. Units
20
–––
–––
–––
1.0
–––
–––
–––
–––
–––
–––
20
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
22
10
14
2.0
-4.4
–––
–––
–––
–––
–––
–––
12
3.5
1.3
4.2
3.0
5.5
19
2.8
33
6.0
14
12
1420
960
100
–––
–––
13
19
2.3
–––
100
20
125
200
-200
–––
18
–––
–––
–––
–––
–––
–––
4.2
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
–––
–––
pF
nC
Ω
V
Conditions
V
GS
= 0V, I
D
= 250µA
mV/°C Reference to 25°C, I
D
= 1mA
mΩ V
GS
= 10V, I
D
= 11A
V
mV/°C
V
DS
= 20V, V
GS
= 0V
µA
nA
S
V
DS
= 16V, V
GS
= 0V
V
DS
= 16V, V
GS
= 0V, T
J
= 125°C
V
GS
= 20V
V
GS
= -20V
V
DS
= 10V, I
D
= 8.8A
V
DS
= 10V
V
GS
= 4.5V
I
D
= 8.8A
See Fig. 16
V
DS
= 16V, V
GS
= 0V
V
DD
= 15V, V
GS
= 4.5V
ns
V
GS
= 4.5V, I
D
V
DS
= V
GS
, I
D
= 250µA
e
= 8.8A
e
nC
I
D
= 8.8A
Clamped Inductive Load
V
GS
= 0V
V
DS
= 10V
ƒ = 1.0MHz
Max.
97
8.8
4.2
Ãe
Avalanche Characteristics
E
AS
I
AR
E
AR
Ã
d
–––
–––
–––
–––
–––
–––
–––
0.83
42
51
Units
mJ
A
mJ
Diode Characteristics
Parameter
I
S
I
SM
V
SD
t
rr
Q
rr
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Min. Typ. Max. Units
48
A
380
1.2
62
77
V
ns
nC
Conditions
MOSFET symbol
showing the
integral reverse
G
D
Ã
S
p-n junction diode.
T
J
= 25°C, I
S
= 8.8A, V
GS
= 0V
T
J
= 25°C, I
F
= 8.8A
di/dt = 100A/µs
e
e
2
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IRF6602/IRF6602TR1
1000
ID, Drain-to-Source Current (A)
100
ID, Drain-to-Source Current (A)
VGS
TOP
10V
5.0V
4.5V
4.0V
3.5V
3.3V
3.0V
BOTTOM 2.7V
1000
100
VGS
10V
5.0V
4.5V
4.0V
3.5V
3.3V
3.0V
BOTTOM 2.7V
TOP
10
2.7V
20µs PULSE WIDTH
Tj = 25°C
0.1
1
10
100
10
2.7V
20µs PULSE WIDTH
Tj = 150°C
1
0.1
1
10
100
1
VDS, Drain-to-Source Voltage (V)
VDS, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
100.00
2.0
T J = 150°C
ID, Drain-to-Source Current
(Α
)
1.5
I
D
= 11A
10.00
(Normalized)
T J = 25°C
R
DS(on)
, Drain-to-Source On Resistance
1.0
0.5
1.00
2.0
2.5
3.0
VDS = 15V
20µs PULSE WIDTH
3.5
4.0
4.5
5.0
0.0
-60
-40
-20
0
20
40
60
80
100
V
GS
= 10V
120
140
160
VGS, Gate-to-Source Voltage (V)
T
J
, Junction Temperature
(
°
C)
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance
Vs. Temperature
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3
IRF6602/IRF6602TR1
100000
10000
Coss = C + Cgd
ds
VGS , Gate-to-Source Voltage (V)
VGS = 0V,
f = 1 MHZ
Ciss = C + Cgd, C
gs
ds SHORTED
Crss = C
gd
6.0
ID= 8.8A
5.0
4.0
3.0
2.0
1.0
0.0
0
5
10
15
Q G Total Gate Charge (nC)
VDS= 16V
VDS= 10V
C, Capacitance(pF)
1000
Ciss
Coss
100
Crss
10
1
10
100
VDS, Drain-to-Source Voltage (V)
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
100
1000
OPERATION IN THIS AREA
LIMITED BY R DS(on)
I
SD
, Reverse Drain Current (A)
T
J
= 150
°
C
10
ID, Drain-to-Source Current (A)
100
100µsec
10
1msec
1
Tc = 25°C
Tj = 150°C
Single Pulse
0
1
10
100
10msec
T
J
= 25
°
C
1
0.1
0.2
0.4
0.6
0.8
1.0
V
GS
= 0 V
1.2
1.4
0.1
V
SD
,Source-to-Drain Voltage (V)
VDS , Drain-toSource Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating
Area
4
www.irf.com
IRF6602/IRF6602TR1
12
3.0
VGS(th) Gate threshold Voltage (V)
2.5
9
2.0
I
D
, Drain Current (A)
6
1.5
ID = 250µA
1.0
3
0.5
0
25
50
75
100
125
150
0.0
-75
-50
-25
0
25
50
75
100
125
150
T
A
, Ambient Temperature (°C)
T J , Temperature ( °C )
Fig 9.
Maximum Drain Current Vs.
Ambient Temperature
Fig 10.
Threshold Voltage Vs. Temperature
100
(Z
thJA
)
D = 0.50
10
0.20
0.10
Thermal Response
0.05
P
DM
t
1
t
2
SINGLE PULSE
(THERMAL RESPONSE)
0.1
0.00001
Notes:
1. Duty factor D =
2. Peak T
0.0001
0.001
0.01
0.1
t
1
/ t
2
J
= P
DM
x Z
thJA
+T
A
10
100
0.02
1
0.01
1
t
1
, Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
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5
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