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IRKNF180-12EPPBF

Description
Silicon Controlled Rectifier, 282.6A I(T)RMS, 1200V V(DRM), 1200V V(RRM), 1 Element
CategoryTrigger device   
File Size55KB,1 Pages
ManufacturerInternational Rectifier ( Infineon )
Websitehttp://www.irf.com/
Environmental Compliance  
Download Datasheet Parametric View All

IRKNF180-12EPPBF Overview

Silicon Controlled Rectifier, 282.6A I(T)RMS, 1200V V(DRM), 1200V V(RRM), 1 Element

IRKNF180-12EPPBF Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerInternational Rectifier ( Infineon )
package instructionFLANGE MOUNT, R-PXFM-X5
Reach Compliance Codecompliant
Is SamacsysN
Other featuresFAST
Shell connectionISOLATED
Nominal circuit commutation break time18 µs
ConfigurationSINGLE WITH BUILT-IN FREE-WHEELING DIODE
Critical rise rate of minimum off-state voltage100 V/us
Maximum DC gate trigger current200 mA
Maximum DC gate trigger voltage3 V
Maximum holding current600 mA
JESD-30 codeR-PXFM-X5
Number of components1
Number of terminals5
Maximum operating temperature125 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)260
Certification statusNot Qualified
Maximum rms on-state current282.6 A
Maximum repetitive peak off-state leakage current30000 µA
Off-state repetitive peak voltage1200 V
Repeated peak reverse voltage1200 V
surface mountNO
Terminal formUNSPECIFIED
Terminal locationUNSPECIFIED
Maximum time at peak reflow temperature40
Trigger device typeSCR
Base Number Matches1
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