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Datasheet> All Categories > Discrete semiconductor> The transistor> SHD2185B
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SHD2185B

Description
POWER MOSFETS
CategoryDiscrete semiconductor    The transistor   
File Size35KB，2 Pages
ManufacturerSENSITRON
Websitehttp://www.sensitron.com/
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SHD2185B Overview

POWER MOSFETS

SHD2185B Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
MakerSENSITRON
package instructionSMALL OUTLINE, R-CSSO-G2
Contacts2
Reach Compliance Codecompli
Shell connectionDRAIN
ConfigurationSINGLE
Minimum drain-source breakdown voltage500 V
Maximum drain current (Abs) (ID)12 A
Maximum drain current (ID)12 A
Maximum drain-source on-resistance0.4 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-CSSO-G2
Humidity sensitivity level1
Number of components1
Number of terminals2
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialCERAMIC, METAL-SEALED COFIRED
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum power consumption environment150 W
Maximum power dissipation(Abs)150 W
Certification statusNot Qualified
surface mountYES
Terminal formGULL WING
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
Transistor component materialsSILICON

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POWER MOSFETS
HERMETIC POWER MOSFETs
N-CHANNEL, SURFACE MOUNT
DRAIN TO
SOURCE
BREAKDOWN
VOLTAGE
V(BR)DSS
CONTINUOUS
DRAIN
CURRENT
ID
Amps
25°C
100°C
50
50
45
31
38
24
30
19
14
9.0
12
7.75
7.1
4.5
6.2
4.0
5.6
3.5
50
50
45
31
38
24
30
19
14
9.0
12
7.75
7.1
4.5
6.2
4.0
5.6
3.5
50
50
45
31
38
24
30
19
14
9.0
12
7.75
7.1
4.5
6.2
4.0
5.6
3.5
45
31
38
24
75
50
75
50
30
19
50
30
50
30
14
9.0
12
7.75
24
18
24
18
20
12
20
12
7.1
4.5
13
8.0
13
8.0
6.2
4.0
12
7.2
12
7.2
5.6
3.5
12
7.2
12
7.2
MAXIMUM
POWER
DISSIPATION
PD
Watts
25°C
100
200
200
200
200
200
200
200
200
100
200
200
200
200
200
200
200
200
100
200
200
200
200
200
200
200
200
200
200
300
300
200
300
300
200
200
300
300
300
300
200
300
300
200
300
300
200
300
300
STATIC
DRAIN TO
SOURCE ON
RESISTANCE
RDS(on)
Ohms
.012
.02
.055
.85
.30
.40
1.2
1.6
2.0
.012
.02
.055
.085
.30
.40
1.2
1.6
2.0
.012
.02
.055
.085
.30
.40
1.2
1.6
2.0
.02
.055
.025
.025
.085
.05
.05
.30
.40
.23
.23
.35
.35
1.2
.80
.80
1.6
.90
.90
2.0
1.05
1.05
Amps
20
31
24
19
9.0
7.75
4.5
4.0
3.5
20
21
24
19
9.0
7.75
4.5
4.0
3.5
20
21
24
19
9.0
7.75
4.5
4.0
3.5
31
24
37.5
37.5
19
25
25
9.0
7.75
12
12
10
10
4.5
6.5
6.5
4.0
6.0
6.0
3.5
6.0
6.0
MAXIMUM
THERMAL
RESISTANCE
R
θJC
°C/W
0.7
0.6
0.6
0.6
0.6
0.6
0.6
0.6
0.6
0.7
0.6
0.6
0.6
0.6
0.6
0.6
0.6
0.6
0.7
0.6
0.6
0.6
0.6
0.6
0.6
0.6
0.6
0.37
0.37
0.27
0.27
0.37
0.27
0.27
0.37
0.37
0.27
0.27
0.27
0.27
0.34
0.27
0.27
0.34
0.27
0.27
0.34
0.27
0.27
SIMILAR
PART TYPE
TYPE
NUMBER
PKG.
STYLE
Volts
SHD218413
30
SHD2181
60
SHD2182
100
SHD2183
200
SHD2184
400
SHD2185
500
SHD2186
800
SHD2187
900
SHD2188
1000
SHD218413A
30
SHD2181A
60
SHD2182A
100
SHD2183A
200
SHD2184A
400
SHD2185A
500
SHD2186A
800
SHD2187A
900
SHD2188A
1000
SHD218413B
30
SHD2181B
60
SHD2182B
100
SHD2183B
200
SHD2184B
400
SHD2185B
500
SHD2186B
800
SHD2187B
900
SHD2188B
1000
SHD239501
60
SHD239502
100
SHD239601
100
SHD239602
100
SHD239503
200
SHD239603
200
SHD239604
200
SHD239504
400
SHD239505
500
SHD239605
500
SHD239606
500
SHD239607
600
SHD239608
600
SHD239506
800
SHD239609
800
SHD239610
800
SHD239507
900
SHD239611
900
SHD239612
900
SHD239508
1000
SHD239613
1000
SHD239614
1000
Q
PRELIMINARY INFORMATION
HERMETIC POWER MOSFETs
P-CHANNEL, SURFACE MOUNT
DRAIN TO
QMTP75N03
IRFM054
IRFM150
IRFM250
IRFM350
IRFM450
IRFAE50
IRFAF50
IRFAG50
QMTP75N03
IRFM054
IRFM150
IRFM250
IRFM350
IRFM450
IRFAE50
IRFAF50
IRFAG50
QMTP75N03
IRFM054
IRFM150
IRFM250
IRFM350
IRFM450
IRFAE50
IRFAF50
IRFAG50
IRFM054
IRFM150
IXTM75N10
IXFM75N10
IRFM250
IXTM50N20
IXFM50N20
IRFM350
IRFM450
IXTM24N50
IXFM24N50
IXTM20N60
IXFM20N60
IRFAE50
IXTM13N80
IXFM13N80
IRFAF50
IXTM12N90
IXFM12N90
IRFAG50
IXTM12N100
IXFM12N100
SHD-5
SHD-5A
SHD-5B
SHD-6
CONTINUOUS
MAXIMUM
STATIC
MAXIMUM
SIMILAR

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