IPT029N08N5
MOSFET
OptiMOS
TM
5Power-Transistor,80V
Features
•Idealforhighfrequencyswitchingandsync.rec.
•ExcellentgatechargexR
DS(on)
product(FOM)
•Verylowon-resistanceR
DS(on)
•N-channel,normallevel
•100%avalanchetested
•Pb-freeplating;RoHScompliant
•QualifiedaccordingtoJEDEC
1)
fortargetapplications
•Halogen-freeaccordingtoIEC61249-2-21
Tab
HSOF
12
34
56
78
Table1KeyPerformanceParameters
Parameter
V
DS
R
DS(on),max
I
D
Q
oss
Q
G
(0V..10V)
Value
80
2.9
169
83
70
Unit
V
mΩ
A
nC
nC
Gate
Pin 1
Drain
Tab
Source
Pin 2-8
Type/OrderingCode
IPT029N08N5
Package
PG-HSOF-8
Marking
029N08N5
RelatedLinks
-
1)
J-STD20 and JESD22
Final Data Sheet
1
Rev.2.0,2016-01-22
OptiMOS
TM
5Power-Transistor,80V
IPT029N08N5
TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Final Data Sheet
2
Rev.2.0,2016-01-22
OptiMOS
TM
5Power-Transistor,80V
IPT029N08N5
1Maximumratings
atT
A
=25°C,unlessotherwisespecified
Table2Maximumratings
Parameter
Symbol
Values
Min.
-
-
-
-
-
-20
-
-55
Typ.
-
-
-
-
-
-
-
-
Max.
169
120
52
676
124
20
167
175
Unit
Note/TestCondition
V
GS
=10V,T
C
=25°C
V
GS
=10V,T
C
=100°C
V
GS
=10V,T
A
=25°C,R
thJA
=40K/W
1)
T
C
=25°C
I
D
=150A,R
GS
=25Ω
-
T
C
=25°C
IEC climatic category;
DIN IEC 68-1: 55/175/56
Continuous drain current
Pulsed drain current
2)
Avalanche energy, single pulse
3)
Gate source voltage
Power dissipation
Operating and storage temperature
I
D
I
D,pulse
E
AS
V
GS
P
tot
T
j
,T
stg
A
A
mJ
V
W
°C
2Thermalcharacteristics
Table3Thermalcharacteristics
Parameter
Thermal resistance, junction - case
Device on PCB,
minimal footprint
Device on PCB,
6 cm² cooling area
1)
Symbol
R
thJC
R
thJA
R
thJA
Values
Min.
-
-
-
Typ.
-
-
-
Max.
0.9
62
40
Unit
K/W
K/W
K/W
Note/TestCondition
-
-
-
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm
2
(one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
2)
See Diagram 3 for more detailed information
3)
See Diagram 13 for more detailed information
1)
Final Data Sheet
3
Rev.2.0,2016-01-22
OptiMOS
TM
5Power-Transistor,80V
IPT029N08N5
3Electricalcharacteristics
Table4Staticcharacteristics
Parameter
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Gate resistance
1)
Transconductance
Symbol
V
(BR)DSS
V
GS(th)
I
DSS
I
GSS
R
DS(on)
R
G
g
fs
Values
Min.
80
2.2
-
-
-
-
-
-
75
Typ.
-
3.0
0.1
10
10
2.5
3.4
1.5
150
Max.
-
3.8
1
100
100
2.9
4.0
2.25
-
Unit
V
V
µA
nA
mΩ
Ω
S
Note/TestCondition
V
GS
=0V,I
D
=1mA
V
DS
=V
GS
,I
D
=108µA
V
DS
=80V,V
GS
=0V,T
j
=25°C
V
DS
=80V,V
GS
=0V,T
j
=125°C
V
GS
=20V,V
DS
=0V
V
GS
=10V,I
D
=150A
V
GS
=6V,I
D
=75A
-
|V
DS
|>2|I
D
|R
DS(on)max
,I
D
=100A
Table5Dynamiccharacteristics
1)
Parameter
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Symbol
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Values
Min.
-
-
-
-
-
-
-
Typ.
4900
790
36
20
12
42
13
Max.
6500
1100
63
-
-
-
-
Unit
pF
pF
pF
ns
ns
ns
ns
Note/TestCondition
V
GS
=0V,V
DS
=40V,f=1MHz
V
GS
=0V,V
DS
=40V,f=1MHz
V
GS
=0V,V
DS
=40V,f=1MHz
V
DD
=40V,V
GS
=10V,I
D
=100A,
R
G,ext
=1.8Ω
V
DD
=40V,V
GS
=10V,I
D
=100A,
R
G,ext
=1.8Ω
V
DD
=40V,V
GS
=10V,I
D
=100A,
R
G,ext
=1.8Ω
V
DD
=40V,V
GS
=10V,I
D
=100A,
R
G,ext
=1.8Ω
Table6Gatechargecharacteristics
2)
Parameter
Gate to source charge
Gate charge at threshold
Gate to drain charge
1)
Switching charge
Gate charge total
1)
Gate plateau voltage
Gate charge total, sync. FET
Output charge
1)
Symbol
Q
gs
Q
g(th)
Q
gd
Q
sw
Q
g
V
plateau
Q
g(sync)
Q
oss
Values
Min.
-
-
-
-
-
-
-
-
Typ.
24
15
15
24
70
4.9
60
83
Max.
-
-
22.8
-
87
-
-
110
Unit
nC
nC
nC
nC
nC
V
nC
nC
Note/TestCondition
V
DD
=40V,I
D
=100A,V
GS
=0to10V
V
DD
=40V,I
D
=100A,V
GS
=0to10V
V
DD
=40V,I
D
=100A,V
GS
=0to10V
V
DD
=40V,I
D
=100A,V
GS
=0to10V
V
DD
=40V,I
D
=100A,V
GS
=0to10V
V
DD
=40V,I
D
=100A,V
GS
=0to10V
V
DS
=0.1V,V
GS
=0to10V
V
DD
=40V,V
GS
=0V
1)
2)
Defined by design. Not subject to production test.
See
″Gate
charge waveforms″ for parameter definition
Final Data Sheet
4
Rev.2.0,2016-01-22
OptiMOS
TM
5Power-Transistor,80V
IPT029N08N5
Table7Reversediode
Parameter
Diode continuous forward current
Diode pulse current
Diode forward voltage
Reverse recovery time
1)
Reverse recovery charge
1)
Symbol
I
S
I
S,pulse
V
SD
t
rr
Q
rr
Values
Min.
-
-
-
-
-
Typ.
-
-
0.92
84
175
Max.
139
676
1.2
168
350
Unit
A
A
V
ns
nC
Note/TestCondition
T
C
=25°C
T
C
=25°C
V
GS
=0V,I
F
=100A,T
j
=25°C
V
R
=40V,I
F
=100A,di
F
/dt=100A/µs
V
R
=40V,I
F
=100A,di
F
/dt=100A/µs
1)
Defined by design. Not subject to production test.
Final Data Sheet
5
Rev.2.0,2016-01-22
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