SFT6678 SERIES
Solid State Devices, Inc.
14830 Valley View Blvd * La Mirada, Ca 90638
Phone: (562) 404-7855 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
DESIGNER’S DATA SHEET
Part Number / Ordering Information
1/
SFT6678 M __ TX
¦
¦
¦
+ Scre
ening
2/
__
= Not Screen
TX = TX Level
TXV = TXV Level
S = S Level
3/ 4/
¦
+
Lead Bend
_
= Straight Leads
¦
UB = Up Bend
¦
DB = Down Bend
3/
+
Package
M
= TO-254
Z = TO-254Z
/3 = TO-3
¦
¦
¦
¦
¦
¦
¦
¦
¦
¦
¦
¦
15 AMPS
400 Volts
NPN High Speed
Power Transistor
Application Notes:
• Replaces Industry Standard 2N6678
• Designed for High Voltage, High Speed,
Power Switching Applications Such as:
• Off-Line Supplies
• Converter Circuits
• Pulse Width Modulated Regulators
• Motor Controls
• Deflection Circuits
Maximum Ratings
Collector – Emitter Voltage
Collector – Base Voltage
Emitter – Base Voltage
Continuous Collector Current
Continuous Base Current
Operating and Storage Temperature
Total Power Dissipation @ T
C
=25°C
Derate above 25°C
Maximum Thermal Resistance
(Junction to Case)
Symbol
V
CEO
V
CBO
V
EBO
I
C
I
B
T
J
, T
STG
P
D
R
0JC
Value
400
650
8.0
15
5.0
-65 to +200
175
1.0
1.0
Units
Volts
Volts
Volts
Amps
Amps
°C
W
W/°C
ºC/W
TO-254 (M)
TO-254 (Z)
TO-3 (/3)
Available Part Numbers:
SFT6678/3 SFT6678M
SFT6678MDB
SFT6678MUB
SFT6678Z
SFT6678ZDB
SFT6678ZUB
PIN ASSIGNMENT (Standard)
Package
Collector
Emitter
Case
Pin 2
TO-3 (/3)
Pin 1
Pin 2
TO-254 (M)
Pin 1
Pin 2
TO-254 (Z)
Base
Pin 3
Pin 3
Pin 3
NOTE:
All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: TR0019C
DOC
SFT6678 SERIES
Solid State Devices, Inc.
14830 Valley View Blvd * La Mirada, Ca 90638
Phone: (562) 404-7855 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
Electrical Characteristics
Collector Cutoff Current
V
CE
=650V
DC
, V
BE
(off) =1.5V
DC
Collector – Base Leakage Current
Emitter Cutoff Current
Collector-Emitter Sustaining Voltage
(IC = 200mA, IB = 0)
DC Current Gain *
VCE=3V, 1C=15A, TA= 25°C
VCE=3V, 1C=1A, TA= 25°C
VCE=3V, 1C=15A,TA= -55°C
T
C
=25°C
T
C
=100°C
V
CB
=650V
(V
EB
= 8V, I
C
= 0)
Symbol
I
CEV
I
CBO
I
EBO
Min
-
-
-
Max
0.1
1.0
1
2
-
-
-
-
1.5
1.5
2.0
Units
mA
mA
mA
-
400
8
15
4
-
V
CEO(sus)
H
F
E1
H
F
E2
H
F
E3
V
BE
(SAT)
(TC = 25°C)
V
(TC = 100°C)
CE (SAT)
(VCC = 11.7V)
(VCC = 20V)
(VCC = 100V)
V
DC
Base-Emitter Saturation Voltage *
(IC = 15A
DC
, IB = 3A
DC
)
Collector-Emitter Saturation Voltage *
(IC = 15A, IB = 3A)
Second Breakdown
(t = 1.0 sec, TC = 25oC)
Reverse Bias Second Breakdown
(VBE (off) = 1 to 6V, VCLAMP = 450V, T C < 100oC)
V
DC
V
DC
A
A
A
A
I
S/b1
I
S/b2
I
S/b3
RBSOA
15.0
8.75
0.3
15.0
3
150
-
-
-
-
10
500
0.1
0.6
2.5
0.5
0.5
Current Gain
(IC = 1A, VCE = 10VDC, f = 5MHz)
Output Capacitance
(VCB = 10VDC , f = 0.1MHz)
|h
FE
|
C
ob
t
d
t
s
t
r
t
f
pF
Delay Time
Storage Time
Rise Time
Fall Time
(V
CC
= 200V
DC ,
I
C
= 15A
DC
,
I
B1
= I
B2
= 3A
DC
,
t
P
= 50
µsec,
Duty Cycle < 2%
V
B
= 6V
DC ,
R
L
= 13.5Ω)
––
––
µsec
Cross Over Time
(I
C
= 15 A(pk), V
CLAMP
= 450V, I
B1
= 3 A, V
BE(off)
=
6V)
t
c
––
µsec
NOTES:
* Pulse Test: Pulse Width = 300
µs,
Duty Cycle < 2%
1/ For Ordering Information, Price, and Availability Contact Factory.
2/ Screening per MIL-PRF-19500.
3/ For Package Outlines Contact Factory.
4/ Up and Down Bend Configurations Available for M and Z (TO-254 and TO-254Z) Packages Only.
5/ All Electrical Characteristics @ 25
o
C, Unless Otherwise Specified.
NOTE:
All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: TR0019C
DOC
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