SFF9130Z datasheet, PDF - EEWORLD Datasheet

SFF9130Z: Description-11 AMP -100 VOLTS 0.30 ohm P-Channel Power MOSFET; CategoryDiscrete semiconductor The transistor; File Size171KB，2 Pages; ManufacturerSSDI; Websitehttp://www.ssdi-power.com/

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SFF9130Z Overview

-11 AMP -100 VOLTS 0.30 ohm P-Channel Power MOSFET

Parameter Name	Attribute value
Maker	SSDI
Parts packaging code	TO-254Z
package instruction	HERMETIC SEALED, TO-254Z, 3 PIN
Contacts	3
Reach Compliance Code	compli
ECCN code	EAR99
Avalanche Energy Efficiency Rating (Eas)	81 mJ
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	100 V
Maximum drain current (Abs) (ID)	11 A
Maximum drain current (ID)	11 A
Maximum drain-source on-resistance	0.35 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	S-MSFM-P3
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Package body material	METAL
Package shape	SQUARE
Package form	FLANGE MOUNT
Polarity/channel type	P-CHANNEL
Maximum power dissipation(Abs)	63 W
Certification status	Not Qualified
surface mount	NO
Terminal form	PIN/PEG
Terminal location	SINGLE
transistor applications	SWITCHING
Transistor component materials	SILICON

	SFF9130Z	SFF9130M
Description	-11 AMP -100 VOLTS 0.30 ohm P-Channel Power MOSFET	-11 AMP -100 VOLTS 0.30 ohm P-Channel Power MOSFET
Maker	SSDI	SSDI
Parts packaging code	TO-254Z	TO-254
package instruction	HERMETIC SEALED, TO-254Z, 3 PIN	TO-254, 3 PIN
Contacts	3	3
Reach Compliance Code	compli	compli
ECCN code	EAR99	EAR99
Avalanche Energy Efficiency Rating (Eas)	81 mJ	81 mJ
Configuration	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	100 V	100 V
Maximum drain current (Abs) (ID)	11 A	11 A
Maximum drain current (ID)	11 A	11 A
Maximum drain-source on-resistance	0.35 Ω	0.35 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	S-MSFM-P3	S-MSFM-P3
Number of components	1	1
Number of terminals	3	3
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE
Maximum operating temperature	150 °C	150 °C
Package body material	METAL	METAL
Package shape	SQUARE	SQUARE
Package form	FLANGE MOUNT	FLANGE MOUNT
Polarity/channel type	P-CHANNEL	P-CHANNEL
Maximum power dissipation(Abs)	63 W	63 W
Certification status	Not Qualified	Not Qualified
surface mount	NO	NO
Terminal form	PIN/PEG	PIN/PEG
Terminal location	SINGLE	SINGLE
transistor applications	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON

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