EEWORLDEEWORLDEEWORLD

Part Number

Search

1N4934

Description
1 A, 100 V, SILICON, SIGNAL DIODE
Categorysemiconductor    Discrete semiconductor   
File Size182KB,2 Pages
ManufacturerGood-Ark
Websitehttp://www.goodark.com/
Download Datasheet Compare View All

1N4934 Online Shopping

Suppliers Part Number Price MOQ In stock  
1N4934 - - View Buy Now

1N4934 Overview

1 A, 100 V, SILICON, SIGNAL DIODE

1N4933 THRU 1N4937
FAST SWITCHING PLASTIC RECTIFIER
Reverse Voltage -
50 to 600 Volts
Forward Current -
1.0 Ampere
Features
Plastic package has Underwriters Laboratory
Flammability Classification 94V-0
Fast switching for high efficiency
Construction utilizes void-free molded plastic technique
1.0 ampere operation at T
A
=75 with no thermal
runaway
High temperature soldering guaranteed:
250 /10 seconds, 0.375”(9.5mm) lead length,
5 lbs. (2.3kg) tension
Mechanical Data
Case:
DO-41 molded plastic body
Terminals:
Plated axial leads, solderable per
MIL-STD-750, method 2026
Polarity:
Color band denotes cathode end
Mounting Position:
Any
Weight:
0.012 ounce, 0.33 gram
DIM ENSIONS
DIM
A
B
C
D
inches
Min.
0.165
0.079
0.028
1.000
Max.
0.205
0.106
0.034
-
Min.
4.2
2.0
0.71
25.40
mm
Max.
5.2
2.7
0.86
-
Note
Mximum Ratings and Electrical Characteristics
Ratings at 25
ambient temperature unless otherwise specified.
Symbols
1N4933
1N4934
1N4935
1N4936
1N4937
Units
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
0.375" (9.5mm) lead length at T
A
=75
Peak forward surge current
8.3mS single half sine-wave superimposed
on rated load (MIL-STD-750D 4066 mothed) at T
A
=75
Maximum instantaneous forward voltage at 1.0A
Maximum DC reverse current
at rated DC blocking voltage
T
A
=25
T
A
=100
V
RRM
V
RMS
V
DC
I
(AV)
I
FSM
V
F
I
R
T
rr
C
J
R
R
JA
JL
50
35
50
100
70
100
200
140
200
1.0
30.0
1.2
5.0
100.0
200.0
15.0
55.0
25.0
-50 to +150
400
280
400
600
420
600
Volts
Volts
Volts
Amp
Amps
Volts
A
nS
F
/W
Maximum reverse recovery time (Note 1) T
J
=25
Typical junction capacitance (Note 2)
Typical thermal resistance (Note 3)
Operating junction and storage temperature range
T
J
, T
STG
Notes:
(1) Reverse recovery test conditions: I
F
=0.5A, I
R
=1.0A, I
rr
=0.25A
(2) Measured at 1.0MHz and applied reverse voltage of 4.0 volts
(3) Thermal resistance from junction to ambient and from junction to lead at 0.375” (9.5mm) lead length, P.C.B. mounted
1

1N4934 Related Products

1N4934 IN4937 1N4933 1N4935 1N4936 1N4937
Description 1 A, 100 V, SILICON, SIGNAL DIODE 1 A, 50 V, SILICON, SIGNAL DIODE 1 A, 50 V, SILICON, SIGNAL DIODE 1 A, 200 V, SILICON, SIGNAL DIODE, DO-41 1 A, 400 V, SILICON, SIGNAL DIODE, DO-204AL 1 A, 600 V, SILICON, SIGNAL DIODE, DO-41

Technical ResourceMore

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Robot
development
community

Index Files: 2503  1274  467  1926  1530  51  26  10  39  31 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号