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1N4935

Description
1 A, 200 V, SILICON, SIGNAL DIODE, DO-41
CategoryDiscrete semiconductor    diode   
File Size35KB,2 Pages
ManufacturerComchip Technology
Websitehttp://www.comchiptech.com/
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1N4935 Overview

1 A, 200 V, SILICON, SIGNAL DIODE, DO-41

1N4935 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerComchip Technology
Reach Compliance Codecompliant
ConfigurationSINGLE
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1.2 V
Maximum non-repetitive peak forward current30 A
Number of components1
Maximum operating temperature150 °C
Maximum output current1 A
Maximum repetitive peak reverse voltage200 V
Maximum reverse recovery time0.2 µs
surface mountNO
Plastic Fast Recovery Rectifier
COMCHIP
www.comchiptech.com
1N4933 THRU 1N4937
Voltage Range 50 to 600 V
Current 1.0 Ampere
Features
Fast switching for high efficiency
Low forward voltage drop
High current capability
Low reverse leakage current
High surge current capability
.034(.86)
.028(.71)
1.0(25.4)
MIN.
DIA.
DO-41
Mechanical Data
Case: Molded plastic DO-41
Epoxy: UL 94V-0 rate flame retardant
Terminals: Solderable per MIL-STD-202
method 208
Polarity:Color band denotes cathode
Mounting position: Any
Weight: 0.036gram
.205(5.2)
.160(4.1)
.107(2.7)
.080(2.0)
1.0(25.4)
MIN.
DIA.
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
SYMBOL
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified
Current T
L
=55
C
Peak Forward Surge Current, 8.3ms single
Half sine-wave superimposed on rated load
(JEDEC method)
Maximum Instantaneous Forward Voltage
@ 1.0 A
Maximum DC Reverse Current @T
J
=25
C
At Rated DC Blocking Voltage @T
J
=100
C
Maximum Reverse Recovery Time (Note 1)
Typical junction Capacitance (Note 2)
Typical Thermal Resistance (Note 3)
Operating Junction and Storage
Temperature Range
o
o
o
1N4933
50
35
50
1N4934
100
70
100
1N4935
200
140
200
1.0
1N4936
400
280
400
1N4937
600
420
600
UNIT
V
V
V
A
V
RRM
V
RMS
V
DC
IF
(AV)
I
FSM
30
A
V
F
1.2
5.0
250
130
15
75
-55 to + 125
o
V
uA
uA
nS
pF
CW
o
I
R
Trr
C
J
R
JA
T
J
, T
STG
C
NOTES : (1) Reverse recovery test conditions I
F
= 0.5A, I
R
= 1.0A, Irr = 0.25A.
(2) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts DC.
(3) Thermal Resistance junction to lead.
MDS0405001A
Page 1

1N4935 Related Products

1N4935 IN4937 1N4933 1N4934 1N4936 1N4937
Description 1 A, 200 V, SILICON, SIGNAL DIODE, DO-41 1 A, 50 V, SILICON, SIGNAL DIODE 1 A, 50 V, SILICON, SIGNAL DIODE 1 A, 100 V, SILICON, SIGNAL DIODE 1 A, 400 V, SILICON, SIGNAL DIODE, DO-204AL 1 A, 600 V, SILICON, SIGNAL DIODE, DO-41
Diode type RECTIFIER DIODE Signal diode RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
Number of components 1 1 1 1 1 1
Maximum repetitive peak reverse voltage 200 V 50 V 50 V 100 V 400 V 600 V
Maximum reverse recovery time 0.2 µs 0.2000 us 0.2 µs 0.2 µs 0.2 µs 0.2 µs
Is it Rohs certified? incompatible - incompatible incompatible incompatible incompatible
Maker Comchip Technology - Comchip Technology Comchip Technology Comchip Technology Comchip Technology
Reach Compliance Code compliant - compliant compliant compliant compliant
Configuration SINGLE - SINGLE SINGLE SINGLE SINGLE
Maximum forward voltage (VF) 1.2 V - 1.2 V 1.2 V 1.2 V 1.2 V
Maximum non-repetitive peak forward current 30 A - 30 A 30 A 30 A 30 A
Maximum operating temperature 150 °C - 150 °C 150 °C 150 °C 150 °C
Maximum output current 1 A - 1 A 1 A 1 A 1 A
surface mount NO - NO NO NO NO
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