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SDH40FSMS

Description
1 A, SILICON, SIGNAL DIODE
CategoryDiscrete semiconductor    diode   
File Size38KB,2 Pages
ManufacturerSSDI
Websitehttp://www.ssdi-power.com/
Download Datasheet Parametric View All

SDH40FSMS Overview

1 A, SILICON, SIGNAL DIODE

SDH40FSMS Parametric

Parameter NameAttribute value
MakerSSDI
package instructionE-LELF-R2
Contacts2
Reach Compliance Codecompli
ECCN codeEAR99
Is SamacsysN
Other featuresMETALLURGICALLY BONDED
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)9.5 V
JESD-30 codeE-LELF-R2
Maximum non-repetitive peak forward current40 A
Number of components1
Number of terminals2
Maximum operating temperature175 °C
Maximum output current1 A
Package body materialGLASS
Package shapeELLIPTICAL
Package formLONG FORM
Certification statusNot Qualified
Maximum repetitive peak reverse voltage4000 V
Maximum reverse recovery time0.18 µs
surface mountYES
Terminal formWRAP AROUND
Terminal locationEND
Base Number Matches1
SOLID STATE DEVICES, INC.
14830 Valley View Blvd * La Mirada, Ca 90638
Phone: (562) 404-7855 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
SDH20F & FSMS
thru
SDH60F & FSMS
1 - 1.5 AMPS
2000 - 6000 VOLTS
FAST RECOVERY
HIGH VOLTAGE
RECTIFIER
AXIAL
SURFACE MOUNT
(SMS)
Designer's Data Sheet
FEATURES:
Fast Recovery: 180 nsec Maximum
PIV to 6000 Volts
Hermetically Sealed Axial and Surface Mount Package
Void-Free Construction
Metallurgically Bonded
175
o
C Maximum Operating Temperature
Replacement for 1N6512 thru 1N6518 and 1N6520 thru
1N6526 in Many Applications.
• TX, TXV, and Space Level Screening Available
• Available in Ultra Fast and Hyper Fast versions. Contact
Factory
1.30
ELECTRICAL CHARACTERISTICS
Part
Number
Symbol
Units
Conditions
SDH20F
SDH25F
SDH30F
SDH40F
SDH50F
SDH60F
Peak
Inverse
Voltage
Average
Rectified
Current
Maximum
Reverse
Current
Maximum Maximum Maximum Maximum
Reverse
Surge
Forward
Recovery Junction
Current
Voltage
Time Capacitance
(1 Cycle)
Typical
Thermal
Impedance
PIV
Volts
25
o
C
I
0
A
100
o
C
I
R
@ PIV
µ
A
25
o
C
100
o
C
V
F
2/
Volts
25
o
C
I
FSM
Amps
25
o
C
t
RR
5/
nsec
25
o
C
C
J
pF
V
R
= 100V
f
T
= 1MHZ
θ
JE
θ
JL
L=1/8"
o
C/W
2000
2500
3000
4000
5000
6000
1.5
1.5
1.5
1.0
1.0
1.0
1.0
1.0
1.0
0.5
0.5
0.5
1.0
1.0
1.0
1.0
1.0
1.0
15
15
15
15
15
15
6.0
6.0
6.0
9.5
9.5
9.5
60
60
60
40
40
40
180
180
180
180
180
180
10
10
10
8
8
8
4
4
4
4
4
4
8
8
8
8
8
8
NOTES:
1. Operating and testing over 10,000 V/inch may require encapsulation or immersion in suitable dielectric material.
2.
I
F
= I
0
;
Maximum forward voltage measured with instantaneous forward pulse of 300µsec minimum.
3. Maximum lead/end tab temperature for soldering is 250
o
C, 3/8" from case for 5 sec maximum.
4. Operating and Storage temperature: -65 to +175
o
C.
5. Reverse Recovery Test Conditions: I
F
= 0.5A, I
R
= 1.0A, I
RR
= 0.25A, T
A
= 25
o
C.
NOTE:
All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET # : RC0058B
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