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XLMG3411R050RWHT

Description
600-V 50m鈩?GaN with integrated driver and cycle-by-cycle overcurrent protection 32-VQFN -40 to 125
Categorysemiconductor    Power management    Gallium nitride (GaN)    GaN FET power level   
File Size2MB,36 Pages
ManufacturerTexas Instruments
Websitehttp://www.ti.com.cn/
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XLMG3411R050RWHT Overview

600-V 50m鈩?GaN with integrated driver and cycle-by-cycle overcurrent protection 32-VQFN -40 to 125

XLMG3411R050RWHT Parametric

Parameter NameAttribute value
Approx. price(US$)16.45 | 1ku
RDS (on)(Milliohm)50
ID(Max)(A)12
Prop delay(ns)20
ConfigurationSingle-Channel Power Stage
VDS(Max)(V)600

XLMG3411R050RWHT Related Products

XLMG3411R050RWHT LMG3411R050 LMG3411R050RWHR LMG3411R050RWHT
Description 600-V 50m鈩?GaN with integrated driver and cycle-by-cycle overcurrent protection 32-VQFN -40 to 125 600-V 50m鈩?GaN with integrated driver and cycle-by-cycle overcurrent protection 32-VQFN -40 to 125 600-V 50m鈩?GaN with integrated driver and cycle-by-cycle overcurrent protection 32-VQFN -40 to 125 600-V 50m鈩?GaN with integrated driver and cycle-by-cycle overcurrent protection 32-VQFN -40 to 125
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