TBD62064APG/FG
TOSHIBA BiCD Integrated Circuit Silicon Monolithic
TBD62064APG, TBD62064AFG
4channel high current sink type DMOS transistor array
TBD62064A series are DMOS transistor array with 4
circuits. It has a clamp diode for switching inductive loads
built-in in each output. Please be careful about thermal
conditions during use.
TBD62064APG
Features
•
•
•
•
•
•
4 circuits built-in
High voltage
:
V
OUT
= 50 V (MAX)
High current
:
I
OUT
= 1.5 A/ch (MAX)
Input voltage(output on)
:
2.5 V (MIN)
Input voltage(output off)
:
0.6 V (MAX)
Package
:
PG type DIP16-P-300-2.54A
FG type HSOP16-P-300-1.00
TBD62064AFG
Pin connection (top view)
TBD62064APG
Weight
DIP16-P-300-2.54A
:
1.11 g (Typ.)
HSOP16-P-300-1.00
:
0.50 g (Typ.)
O4
16
NC
15
I4
14
GND
13
GND
12
I3
11
NC
10
O3
9
1
COMMON
2
O1
3
I1
4
GND
5
GND
6
I2
7
8
O2 COMMON
TBD62064AFG
O4
16
NC
15
I4
14
NC
13
GND
FIN
NC
12
I3
11
NC
10
O3
9
1
COMMON
2
O1
3
I1
4
NC
FIN
GND
5
NC
6
I2
7
O2
8
COMMON
Pin connection may be simplified for explanatory purpose.
©2015 TOSHIBA Corporation
1
2015-12-17
TBD62064APG/FG
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Output voltage
COMMON pin voltage
Output current
Input voltage
Clamp diode reverse
voltage
Clamp diode forward
current
PG
Power
dissipation
FG
Operating temperature
Storage temperature
Symbol
V
OUT
V
COM
I
OUT
V
IN
V
R
I
F
P
D
T
opr
T
stg
Rating
50
−0.5
to 50
1.5
−0.5
to 30
50
1.5
1.47 (Note 1) / 2.7 (Note 2)
0.9 (Note 3) / 1.4 (Note 4)
−40
to 85
−55
to 150
Unit
V
V
A/ch
V
V
A
W
°C
°C
Note1: Device alone. When Ta exceeds 25°C, it is necessary to do the derating with 11.8 mW/°C.
Note2: On PCB (Size: 50 mm
×
50 mm
×
1.6 mm, Cu area: 50%, single-side glass epoxy).
When Ta exceeds 25°C, it is necessary to do the derating with 21.6 mW/°C.
Note3: Device alone. When Ta exceeds 25°C, it is necessary to do the derating with 7.2 mW/°C.
Note4: On PCB (Size: 60 mm
×
30 mm
×
1.6 mm, Cu area: 30%, single-side glass epoxy).
When Ta exceeds 25°C, it is necessary to do the derating with 11.2 mW/°C.
Operating Ranges (Ta = −40 to 85°C)
Characteristics
Output voltage
COMMON pin voltage
Symbol
V
OUT
V
COM
Condition
―
―
1 circuit ON, Ta = 25°C
PG (Note 1)
I
OUT
t
pw
= 25 ms
4 circuits ON
Ta = 85°C
T
j
= 120°C
Duty = 10%
Duty = 50%
Min
―
0
0
0
0
0
0
0
2.5
0
―
Typ.
―
―
―
―
―
―
―
―
―
―
―
Max
50
50
1250
1250
610
1250
990
440
25
0.6
1.25
V
V
A
mA/ch
Unit
V
V
Output
current
FG (Note 2)
1 circuit ON, Ta = 25°C
Duty = 10%
t
pw
= 25 ms
4 circuits ON
Ta = 85°C
Duty = 50%
T
j
= 120°C
I
OUT
= 100 mA or upper, V
OUT
= 2 V
I
OUT
= 100
μA
or less, V
OUT
= 2 V
―
Input voltage
(Output on)
Input voltage
(Output off)
Clamp diode
forward current
V
IN (ON)
V
IN (OFF)
I
F
Note1: On PCB (Size: 50 mm
×
50 mm
×
1.6 mm, Cu area: 50%, single-side glass epoxy).
Note2: On PCB (Size: 60 mm
×
30 mm
×
1.6 mm, Cu area: 30%, single-side glass epoxy).
3
2015-12-17
TBD62064APG/FG
Electrical Characteristics (Ta = 25°C unless otherwise noted)
Characteristics
Output leakage current
Symbol
I
leak
Test
Circuit
1
Condition
V
IN
= 0 V, V
OUT
= 50V
Ta = 85°C
I
OUT
= 1.25 A, V
IN
= 5.0 V
2
I
OUT
= 0.75 A, V
IN
= 5.0 V
3
4
5
6
7
V
IN
= 2.5 V
V
IN
= 0 V, Ta = 85°C
I
OUT
=100 mA or upper,
V
OUT
= 2 V
V
R
= 50 V, Ta = 85°C
I
F
= 1.25 A
V
OUT
= 50 V
R
L
= 42
Ω
C
L
= 15 pF
―
―
―
―
―
―
―
―
Min
―
―
Typ.
―
0.56
(0.45)
0.32
(0.43)
―
―
―
―
―
1.0
1.7
Max
1.0
1.25
(1.0)
0.75
(1.0)
0.2
1.0
2.5
1.0
2.0
―
―
Unit
μA
Output voltage
(Output ON-resistance)
Input current (Output on)
V
DS
(R
ON)
I
IN (ON)
V
(Ω)
mA
μA
V
μA
V
Input current (Output off) I
IN (OFF)
Input voltage (Output on) V
IN (ON)
Clamp diode
reverse current
Clamp diode
forward voltage
Turn−on delay
Turn−off delay
I
R
V
F
t
ON
8
t
OFF
μs
4
2015-12-17
Discrete Device
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