DATASHEET
HS-4423RH, HS-4423EH, HS-4423BRH, HS-4423BEH
Radiation Hardened Dual, Inverting Power MOSFET Drivers
The Radiation Hardened HS-4423RH, HS-4423EH,
HS-4423BRH, HS-4423BEH are inverting, dual, monolithic
high-speed MOSFET drivers designed to convert TTL level
signals into high current outputs at voltages up to 18V.
The inputs of these devices are TTL compatible and can be
directly driven by our HS-1825ARH PWM device or by our
ACS/ACTS and HCS/HCTS type logic devices. The fast rise
times and high current outputs allow very quick control of high
gate capacitance power MOSFETs in high frequency
applications.
The high current outputs minimize power losses in MOSFETs by
rapidly charging and discharging the gate capacitance. The
output stage incorporates a low voltage lock-out circuit that
puts the outputs into a three-state mode when the supply
voltage drops below 10V for the HS-4423RH, HS-4423EH and
7.5V for the HS-4423BRH and HS-4423BEH.
Constructed with the Intersil dielectrically isolated Rad Hard
Silicon Gate (RSG) BiCMOS process, these devices are immune
to Single Event Latch-up and have been specifically designed
to provide highly reliable performance in harsh radiation
environments
FN4564
Rev 5.00
February 11, 2014
Features
• Electrically screened to DLA SMD #
5962-99511
• QML qualified per MIL-PRF-38535 requirements
• EH version acceptance tested to 50krad(Si) (LDR)
• Radiation environment
- High dose rate (50-300rad(Si)/s). . . . . . . . . . . 300krad(Si)
- Latch-up immune
- Low dose rate immune
• I
PEAK
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . >2A (typ)
• Matched rise and fall times (C
L
= 4300pF) . . . . . . . . 75ns (max)
• Low voltage lock-out feature
- HS-4423RH, HS-4423EH, . . . . . . . . . . . . . . . . . . . . . <10.0V
- HS-4423BRH, HS-4423BEH . . . . . . . . . . . . . . . . . . . . . <7.5V
• Wide supply voltage range . . . . . . . . . . . . . . . . . . . 12V to 18V
• Prop delay . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 250ns (max)
• Consistent delay times with V
CC
changes
• Low power consumption
- 40mW with inputs high
- 20mW with inputs low
• Low equivalent input capacitance . . . . . . . . . . . . . 3.2pF (typ)
• ESD protected. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4000V
Applications
• Switching power supplies
• DC/DC converters
• Motor controllers
Pin Configuration
HS-4423RH, HS-4423EH, HS-4423BRH, HS-4423BEH
(FLATPACK CDFP4-F16)
TOP VIEW
NC
IN A
NC
GND A
GND B
NC
IN B
NC
1
2
3
4
5
6
7
8
16
15
14
13
12
11
10
9
NC
OUT A
OUT A
V
CC
V
CC
OUT B
OUT B
NC
NOTE: Pins 4 and 5, 10 and 11, 12 and 13, 14 and 15 are double-bonded to their
same electrical points on the die.
FN4564 Rev 5.00
February 11, 2014
Page 1 of 3
HS-4423RH, HS-4423EH, HS-4423BRH, HS-4423BEH
Ordering Information
ORDERING
SMD NUMBER
(Note 2)
5962F9951101VXC
5962F9951101QXC
HS9-4423RH/PROTO
5962F9951102VXC
5962F9951102QXC
5962F9951103VXC
5962F9951104VXC
HS9-4423BRH/PROTO
5962F9951101V9A
5962F9951103V9A
NOTES:
1. These Intersil Pb-free Hermetic packaged products employ 100% Au plate - e4 termination finish, which is RoHS compliant and compatible with both
SnPb and Pb-free soldering operations.
2. Specifications for Rad Hard QML devices are controlled by the Defense Logistics Agency Land and Maritime (DLA). The SMD numbers listed in the
“Ordering Information” table must be used when ordering.
PART NUMBER
(Note 1)
HS9-4423RH-Q
HS9-4423RH-8
HS9-4423RH/PROTO
HS9-4423BRH-Q
HS9-4423BRH-8
HS9-4423EH-Q
HS9-4423BEH-Q
HS9-4423BRH/PROTO
HS0-4423RH-Q
HS0-4423EH-Q
TEMPERATURE RANGE
(°C)
-55 to +125
-55 to +125
-55 to +125
-55 to +125
-55 to +125
-55 to +125
-55 to +125
-55 to +125
-55 to +125
-55 to +125
PACKAGE
(RoHS Compliant)
16 Ld Flatpack
16 Ld Flatpack
16 Ld Flatpack
16 Ld Flatpack
16 Ld Flatpack
16 Ld Flatpack
16 Ld Flatpack
16 Ld Flatpack
Die
Die
K16.A
K16.A
K16.A
K16.A
K16.A
K16.A
K16.A
K16.A
PKG.
DWG. #
© Copyright Intersil Americas LLC 2002-2014. All Rights Reserved.
All trademarks and registered trademarks are the property of their respective owners.
For additional products, see
www.intersil.com/en/products.html
Intersil products are manufactured, assembled and tested utilizing ISO9001 quality systems as noted
in the quality certifications found at
www.intersil.com/en/support/qualandreliability.html
Intersil products are sold by description only. Intersil may modify the circuit design and/or specifications of products at any time without notice, provided that such
modification does not, in Intersil's sole judgment, affect the form, fit or function of the product. Accordingly, the reader is cautioned to verify that datasheets are
current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its
subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or
otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see
www.intersil.com
FN4564 Rev 5.00
February 11, 2014
Page 2 of 3
HS-4423RH, HS-4423EH, HS-4423BRH, HS-4423BEH
Die Characteristics
DIE DIMENSIONS:
4890
µ
m x 3370
µ
m (193 mils x 133 mils)
Thickness: 483
µ
m
±
25.4
µ
m (19 mils
±
1 mil)
Backside Finish:
Silicon
INTERFACE MATERIALS:
Glassivation:
Type: PSG (Phosphorous Silicon Glass)
Thickness: 8.0kÅ
±
1.0kÅ
Top Metallization:
Type: AlSiCu
Thickness: 16.0kÅ
±
2kÅ
Substrate:
Radiation Hardened Silicon Gate,
Dielectric Isolation
ASSEMBLY RELATED INFORMATION:
Substrate Potential:
Unbiased (DI)
ADDITIONAL INFORMATION:
Worst Case Current Density:
<2.0 x 10
5
A/cm
2
Transistor Count:
125
Metallization Mask Layout
HS-4423RH, HS-4423EH, HS-4423BRH, HS-4423BEH
GND (5)
GND (4)
IN B (7)
IN A (2)
OUT B (10)
OUT B (11)
OUT A (15)
OUT A (14)
V
CC
(12)
V
CC
(13)
FN4564 Rev 5.00
February 11, 2014
Page 3 of 3
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