MCP1631/HV/MCP1631V/VHV
High-Speed, Pulse Width Modulator
Features
• Programmable Switching Battery Charger
Designs
• High-Speed Analog PWM Controller (2 MHz
Operation)
• Combine with Microcontroller for “Intelligent”
Power System Development
• Peak Current Mode Control (MCP1631)
• Voltage Mode Control (MCP1631V)
• High Voltage Options Operate to +16V Input:
- MCP1631HV Current Mode
- MCP1631VHV Voltage Mode
• Regulated Output Voltage Options:
-
+5.0V or +3.3V
-
250 mA maximum current
• External Oscillator Input sets Switching
Frequency and Maximum Duty Cycle Limit
• External Reference Input Sets Regulation Voltage
or Current
• Error Amplifier, Battery Current I
SNS
Amplifier,
Battery Voltage V
SNS
Amplifier Integrated
• Integrated Overvoltage Comparator
• Integrated High Current Low Side MOSFET
Driver (1A Peak)
• Shutdown mode reduces IQ to 2.4 µA (typical)
• Internal Overtemperature Protection
• Undervoltage Lockout (UVLO)
• Package Options:
- 4 mm x 4 mm 20-Lead QFN
(MCP1631/MCP1631V only)
- 20-Lead TSSOP (All Devices)
- 20-Lead SSOP (All Devices)
General Description
The MCP1631/MCP1631V is a high-speed microcon-
troller based pulse width modulator (PWM) used to
develop intelligent power systems. When combined
with a microcontroller, the MCP1631/MCP1631V will
control the power system duty cycle providing output
voltage or current regulation. The microcontroller can
be used to adjust output voltage or current, switching
frequency and maximum duty cycle while providing
additional features making the power system more
intelligent, robust and adaptable.
Typical applications for the MCP1631/MCP1631V
include programmable switch mode battery chargers
capable of charging multiple chemistries, like Li-Ion,
NiMH, NiCd and Pb-Acid configured as single or
multiple cells. By combining with a small microcontrol-
ler, intelligent LED lighting designs and programmable
SEPIC topology voltage and current sources can also
be developed.
The MCP1631/MCP1631V inputs were developed to
be attached to the I/O pins of a microcontroller for
design flexibility. Additional features integrated into the
MCP1631HV/MCP1631VHV provide signal condition-
ing and protection features for battery charger or
constant current source applications.
For applications that operate from a high voltage input,
the MCP1631HV and MCP1631VHV device options
can be used to operate directly from a +3.5V to +16V
input. For these applications, an additional low drop out
+5V or +3.3V regulated output is available and can
provide current up to 250 mA to power a microcontrol-
ler and auxiliary circuits.
Applications
• High Input Voltage Programmable Switching
Battery Chargers
• Supports Multiple Chemistries Li-Ion, NiMH, NiCd
Intelligent and Pb-Acid
• LED Lighting Applications
• Constant Current SEPIC Power Train Design
• USB Input Programmable Switching Battery
Chargers
©
2007 Microchip Technology Inc.
DS22063A-page 1
MCP1631/HV/MCP1631V/VHV
Package Types
20-Lead SSOP and TSSOP
MCP1631/MCP1631V
PGND
SHDN
OSC
IN
OSC
DIS
OV
IN
V
REF
A
GND
NC
NC
NC
1
2
3
4
5
6
7
8
9
10
20 V
EXT
19 P
VDD
18 CS/V
RAMP
17 FB
16 COMP
15 IS
OUT
14 VS
OUT
13 IS
IN
12 VS
IN
11
A
VDD_IN
PGND
SHDN
OSC
IN
OSC
DIS
OV
IN
V
REF
A
GND
NC
NC
V
IN
OSC
DIS
20-Lead SSOP and TSSOP
MCP1631HV/MCP1631VHV
1
2
3
4
5
6
7
8
9
10
20 V
EXT
19 P
VDD
18
CS/V
RAMP
17 FB
16
COMP
15 IS
OUT
14
VS
OUT
13 IS
IN
12 VS
IN
11
A
VDD_OUT
OSC
IN
17
V
REF
20
A
GND
1
OV
IN
19
18
16
15 P
GND
14 V
EXT
13 P
VDD
12 NC
11
CS/V
RAMP
NC 2
A
VDD_IN
3
NC 4
VS
IN
5
6
IS
IN
7
VS
OUT
8
IS
OUT
9
COMP
10
FB
20-Lead 4x4 QFN
MCP1631/MCP1631V
SHDN
DS22063A-page 2
©
2007 Microchip Technology Inc.
MCP1631/HV/MCP1631V/VHV
Typical Application Diagram
Multi-cell, Multi-Chemistry Charger
V
IN
Range +5.5V to +16V
C
IN
MCP1631HV
V
IN
A
VDD_OUT
P
VDD
OSC
IN
IS
OUT
NC
FB
NC
COMP
A
GND
V
EXT
CS
P
GND
IS
IN
OV
IN
VS
IN
V
REF
SHDN
OSC
DIS
VS
OUT
L1B
L1A
C
C
SCHOTTKY
DIODE
C
OUT
R
THERM
R
PIC12F683
V
DD
CCP1
GP4
GND
GP1/C
GP3
GP5
GP0/C
C
A
VDD_OUT
©
2007 Microchip Technology Inc.
LED
DS22063A-page 3
MCP1631/HV/MCP1631V/VHV
Functional Block Diagram
(1)
MCP1631HV/VHV High Speed PIC PWM
V
IN
+3.3V or +5.0V
LDO
250 mA
V
DD
Internal
1.2V V
REF
Internal Regulator for MCP1631HV and MCP1631VHV
Options Only; For MCP1631 and MCP1631V AV
DD_IN
is input
V
DD
A
VDD_OUT
/ A
VDD_IN
Shutdown Control
A3 Remains On
-
C2
+
Overvoltage Comp
w/ Hysteresis
SHDN
OV
IN
P
VDD
V
DD
OSC
DIS
100 kΩ
0.1 µA
OT
V
EXT
UVLO
S
Q
P
GND
OSC
IN
V
DD
V
DD
CS/VR
AMP
COMP
V
DD
FB
V
REF
-
A1
+
A
GND
+
C1
-
R
Q
10R
V
DD
R
R
100 kΩ
IS
IN
A2
2R
R
2.7V Clamp
A3
Remove for MCP1631V
and MCP1631VHV Options
V
DD
Note 1:
For Shutdown control, amplifier A3 remains functional so
battery voltage can be sensed during discharge phase.
2:
For HV options, internal Low Drop Out Regulator provides
+3.3V or +5.0V bias to V
DD
.
DS22063A-page 4
©
2007 Microchip Technology Inc.
+
+
-
-
IS
OUT
VS
IN
VS
OUT
MCP1631/HV/MCP1631V/VHV
1.0
ELECTRICAL
CHARACTERISTICS
†
Notice:
Stresses above those listed under "Maximum
Ratings" may cause permanent damage to the device.
This is a stress rating only and functional operation of
the device at those or any other conditions above those
indicated in the operational sections of this specifica-
tion is not intended. Exposure to maximum rating con-
ditions for extended periods may affect device
reliability.
Absolute Maximum Ratings †
V
IN
- GND (MCP1631/V)................................................+6.5V
V
IN
- GND (MCP1631HV/VHV)....................................+18.0V
All Other I/O ..............................(GND - 0.3V) to (V
DD
+ 0.3V)
LX to GND............................................. -0.3V to (V
DD
+ 0.3V)
V
EXT
Output Short Circuit Current ........................ Continuous
Storage temperature .....................................-65°C to +150°C
Maximum Junction Temperature ...................-40°C to +150°C
Operating Junction Temperature...................-40°C to +125°C
ESD Protection On All Pins:
HBM ................................................................................. 4 kV
MM ..................................................................................400V
DC CHARACTERISTICS
Electrical Specifications:
Unless otherwise noted, V
IN
= 3.0V to 5.5V, F
OSC
= 1 MHz with 10% Duty Cycle, C
IN
= 0.1 µF,
V
DD
for typical values = 5.0V, T
A
for typical values = +25°C, T
A
= -40°C to +125°C for all minimum and maximums.
Parameters
Input Characteristics
Input Voltage (MCP1631/V)
Input Voltage
(MCP1631HV/VHV)
Undervoltage Lockout
(MCP1631/V)
Undervoltage Lockout Hysteresis
(MCP1631/MCP1631V)
Input Quiescent Current
(MCP1631/V, MCP1631HV,VHV)
Shutdown Current
I_AVDD for MCP1631/V
I_VIN for MCP1631HV/VHV
Low Level Input Voltage
High Level Input Voltage
Input Leakage Current
External Oscillator Range
V
DD
V
DD
UVLO
UVLO
_HYS
I(V
IN
)
I
IN_SHDN
3.0
3.5
2.7
40
—
—
2.4
4.4
—
2.0
—
—
—
0.005
—
12
17
0.8
—
1
2
µA
µA
V
V
µA
MHz
Max. operating frequency is
dependent upon circuit topology
and duty cycle.
—
—
2.8
64
3.7
5.5
16.0
3.0
100
5
V
V
V
mV
mA
Non-HV Options
HV Options
(Note 2)
V
IN
Falling, V
EXT
low when input
below UVLO threshold
UVLO Hysteresis
SHDN = V
DD
=OSC
DIS
SHDN = GND =OSC
DIS
,
Note:
Amplifier A3 remains pow-
ered during Shutdown.
Sym
Min
Typ
Max
Units
Conditions
OSC
IN
, OSC
DIS
and SHDN Input Levels
V
IL
V
IH
I
LEAK
F
OSC
Min. Oscillator High Time
Min. Oscillator Low Time
Oscillator Rise and Fall Time
Oscillator Input Capacitance
Note 1:
T
OH
_MIN.
T
OL
_MIN.
T
R
and T
F
C
OSC
—
0.01
—
10
—
5
—
10
—
ns
µs
pf
Note 1
2:
3:
4:
5:
External Oscillator Input (OSC
IN
) rise and fall times between 10 ns and 10 µs were determined during device
characterization testing. Signal levels between 0.8V and 2.0V with rise and fall times measured between 10% and 90%
of maximum and minimum values. Not production tested. Additional timing specifications were fully characterized and
specified that are not production tested.
The minimum V
IN
must meet two conditions: V
IN
≥
3.5V and V
IN
≥
(V
OUT(MAX)
+ V
DROPOUT(MAX)
).
TCV
OUT
= (V
OUT-HIGH
- V
OUT-LOW
) *10
6
/ (V
R
*
ΔTemperature),
V
OUT-HIGH
= highest voltage measured over the
temperature range. V
OUT-LOW
= lowest voltage measured over the temperature range.
Load regulation is measured at a constant junction temperature using low duty cycle pulse testing. Changes in output
voltage due to heating effects are determined using thermal regulation specification TCV
OUT
.
Dropout voltage is defined as the input to output differential at which the output voltage drops 2% below its measured
value with an applied input voltage of V
OUT(MAX)
+ V
DROPOUT(MAX)
or 3.5V, whichever is greater.
DS22063A-page 5
©
2007 Microchip Technology Inc.
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